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Datasheet File OCR Text: |
RB520S-30 diodes schottky barrier diode RB520S-30 z applications low current rectification and high speed switching z features 1) extremely small surface mounting type. (emd2) 2) low i r . (i r =0.1 a typ.) 3) high reliability. z construction silicon epitaxial planar z z z z external dimensions (units : mm) 1.6 0.1 1.2 0.05 0.8 0.05 cathode mark 0.6 0.1 0.12 0.05 rohm : emd2 eiaj : sc-79 jedec : sod-523 0.3 0.05 b z z z z absolute maximum ratings (ta=25 c) parameter symbol limits unit v r 30 v dc reverse voltage i o 200 ma mean rectifying current i fsm 1a peak forward surge curren ? tj 125 c junction temperature tstg ? 40~ + 125 c storage temperature ? 60hz for 1 z z z z electrical characteristics (ta=25 c) parameter forward voltage reverse current symbol min. typ. max. unit conditions v f i r ? ? ? ? 0.60 1.0 v a i f = 200ma v r = 10v note) esd sensitive product handling required.
RB520S-30 diodes z z z z electrical characteristic curves (ta=25 c) 1 10 100 1m 10m 100m 1 forward current : i f (a) forward voltage : v f (v) 0 0.1 0.2 0.3 0.4 0.5 0.7 0.6 c 5 2 1 = a t c 5 7 c 5 2 c 5 2 ? fig. 1 forward characteristics 1n 10n 100n 1 10 100 1m reverse current : i r (a) reverse voltage : v r (v) 0102030 ta=125 c 75 c 25 c ? 25 c fig. 2 reverse characteristics 0102030 1 10 100 reverse voltage : v r (v) capacitance between terminals : c t (pf) fig. 3 capacitance between terminals characteristics f = 1mhz 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta (?c) fig 4. derating curve (mounting on glass epoxy pcbs) |
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