IRG4BC30U-S ultrafast speed igbt insulated gate bipolar transistor e c g n-channel v ces = 600v v ce(on) typ. = 1.95v @v ge = 15v, i c = 12a features ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? industry standard d 2 pak package ? generation 4 igbt's offer highest efficiency available ? igbt's optimized for specified application conditions ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's benefits www.irf.com 1 * when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. 2 d pak pd - 91803 parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 23 i c @ t c = 100c continuous collector current 12 a i cm pulsed collector current ? 92 i lm clamped inductive load current ? 92 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 10 mj p d @ t c = 25c maximum power dissipation 100 p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to + 150 t stg storage temperature range absolute maximum ratings w parameter typ. max. units r q jc junction-to-case CCC 1.2 c/w r q ja junction-to-ambient, ( pcb mounted,steady-state)* CCC 40 thermal resistance
IRG4BC30U-S 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 50 75 i c = 12a q ge gate - emitter charge (turn-on) 8.1 12 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 18 27 v ge = 15v t d(on) turn-on delay time 17 t r rise time 9.6 t j = 25c t d(off) turn-off delay time 78 120 i c = 12a, v cc = 480v t f fall time 97 150 v ge = 15v, r g = 23 w e on turn-on switching loss 0.16 energy losses include "tail" e off turn-off switching loss 0.20 mj see fig. 10, 11, 13, 14 e ts total switching loss 0.36 0.50 t d(on) turn-on delay time 20 t j = 150c, t r rise time 13 i c = 12a, v cc = 480v t d(off) turn-off delay time 180 v ge = 15v, r g = 23 w t f fall time 140 energy losses include "tail" e ts total switching loss 0.73 mj see fig. 13, 14 l e internal source inductance 7.5 nh measured 5mm from package c ies input capacitance 1100 v ge = 0v c oes output capacitance 73 pf v cc = 30v see fig.7 c res reverse transfer capacitance 14 ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 18 v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.63 v/c v ge = 0v, i c = 1.0ma 1.95 2.1 i c = 12a v ge = 15v v ce(on) collector-to-emitter saturation voltage 2.52 i c = 23a see fig.2, 5 2.09 i c = 12a , t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -13 mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 3.1 8.6 s v ce = 100v, i c = 12a 250 v ge = 0v, v ce = 600v 2.0 v ge = 0v, v ce = 10v, t j = 25c 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 23 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature.
IRG4BC30U-S www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-em itter volta g e ( v ) t = 150c t = 25c j j v = 15v 20s pulse w idth ge a 0.1 1 10 100 5 6 7 8 9 101112 c i , collector-to-em itter current (a) ge t = 25c t = 150c j j v , gate-to-em itter volta g e ( v ) a v = 10 v 5s pulse w idth cc 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1 10 100 f, fre q uenc y ( khz ) load current (a) a 60% of rated voltage ideal diodes square wave: for both: triangular wave: clamp voltage: 80% of rated power dissipation = 1.75w duty cycle: 50% t = 125c t = 55c gate drive as specified sink j
IRG4BC30U-S 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs.case temperature 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , c ollector-to-em itter voltage (v) v = 1 5v 80s pulse w idth ge a t , junction temperature (c) j i = 2 4a i = 12 a i = 6.0a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin g le pulse (thermal response) therm al r esponse (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c 0 5 10 15 20 25 25 50 75 100 125 150 maximum dc collector current (a t , case tem perature ( c ) c v = 15v ge a
IRG4BC30U-S www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-em itter volta g e ( v ) a v = 0v, f = 1mhz c = c + c , c sh or te d c = c c = c + c ge ies g e g c ce res g c oes ce g c c ies c res c oes 0 4 8 12 16 20 0 1020304050 ge v , g ate-to-emitter voltage (v) g q , total gate char g e ( nc ) a v = 400v i = 12 a ce c 0.2 0.3 0.4 0.5 0 102030405060 g total switching losses (mj) r , gate resistance ( w ) a v = 480v v = 15v t = 25c i = 12 a cc ge j c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) a i = 6 .0a i = 12a i = 24a r = 23 w v = 15v v = 480v c c c j t , junction temperature ( c ) g ge cc
IRG4BC30U-S 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 0.0 0.4 0.8 1.2 1.6 0102030 c total switching losses (mj) i , collector-to-em itter current ( a ) a r = 23 w t = 1 50 c v = 48 0 v v = 15v g j cc ge 0.1 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-e m itter v oltage (v ) i , c ollector-to-e m itter c urrent (a ) safe operating area v = 20v t = 125c ge j
IRG4BC30U-S www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ower su p p l y , p ulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(o ff) 10% 90% 10% 5% v c i c e on e off ts o n off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
IRG4BC30U-S 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 9/98 10.16 (.400) ref. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m a x. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x d 2 pak package outline
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