x04xxxf ? august 1998 ed : 1a sensitive gate scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tc= 90 c4 a ta= 25 c1.35 i t(av) mean on-state current (180 conduction angle) tc= 90 c2.5 a ta= 25 c0.9 i tsm non repetitive surge peak on-state current (t j initial = 25 c ) tp = 8.3 ms 33 a tp = 10 ms 30 i 2 ti 2 t value for fusing tp = 10 ms 4.5 a 2 s di/dt critical rate of rise of on-state current i g = 10 ma di g /dt = 0.1 a/ m s. 50 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 4.5mm from case 260 c absolute ratings (limiting values) i t(rms) = 4a v drm = 400v to 800v low i gt < 200 m a features symbol parameter voltage unit dmn v drm v rrm repetitive peak off-state voltage t j = 125 c r gk = 1k w 400 600 800 v the x04xxxf series of scrs uses a high performance top glass pnpn technology. these parts are intended for general purpose applications where low gate sensitivity is required, like small engine ignition, smps crowbar protection, food processor. description to202-3 (plastic) k a g 1/4
p g (av) = 0.2 w max. p gm = 3 w max. (tp = 20 m s) i gm = 1.2 a max. (tp = 20 m s) v gd = 0.1vmin. (v d =v drm r l =3.3k w r gk = 1 k w tj= 125c) gate characteristics symbol parameter value unit rth(j-a) junction to ambient 100 c/w rth(j-c) junction to case for dc 7.5 c/w thermal resistances symbol test conditions sensitivity unit 02 03 05 i gt v d =12v (dc) r l =140 w tj= 25 c min 20 20 m a max 200 200 50 v gt v d =12v (dc) r l =140 w tj= 25 cmax 0.8 v v rgm i rg =10 m a tj= 25 cmin 8 v i h i t = 50ma r gk = 1 k w tj= 25 cmax 5 ma i l i g =1ma r gk = 1 k w tj= 25 cmax 6 ma v tm i tm = 8a tp= 380 m s tj= 25 cmax 1.8 v i drm i rrm v d = v drm r gk = 1 k w v r = v rrm tj= 25 cmax 5 m a tj= 110 c max 200 dv/dt v d =67%v drm r gk = 1 k w tj= 110 c min 10 15 15 v/ m s electrical characteristics ordering information x 04 03 m f scr top glass current package : f=to202-3 voltage sensitivity x04xxxf 2/4
00.511.522.533.54 0 1 2 3 4 5 p(w) 360 o = 180 o =120 o =90 o =60 o =30 o dc i (a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 20 40 60 80 100 120 140 0 1 2 3 4 5-85 -95 -105 -115 -125 p (w) tcase ( c) o rth(j-c) rth(j-a) tamb ( c) o fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and tcase). 0 102030405060708090100110120130 0 0.2 0.4 0.6 0.8 1 i (a) t(av) =180 o tamb ( c) o fig.3 : average on-state current versus case tem- perature. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp(s) fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 1 10 100 1000 0 5 10 15 20 25 30 35 tj initial = 25 c o number of cycles i(a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. x04xxxf 3/4
110 1 10 100 i(a).i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 00.511.522.533.54 1 10 100 i(a) tm tj initial 25 c o tj max v(v) tm tj max vto =0.95v rt =0.100 fig.8 : on-state characteristics (maximum values). package mechanical data to202-3 (plastic) a o p n n1 f c d j h m ref. dimensions millimeters inches typ. max. typ. max. a 10.1 0.398 c 7.3 0.287 d 10.5 0.413 e 7.4 0.290 f 1.5 0.059 h 0.51 0.020 j 1.5 0.059 m 4.5 0.177 n 5.3 0.209 n1 2.54 0.100 o 1.4 0.055 p 0.7 0.028 marking : type number weight : 1 g information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. x04xxxf 4/4
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