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rej03g1571-0101 rev. 1.01 page 1 of 11 may 28, 2010 preliminary datasheet rjm0306jsp silicon n / p channel power mos fet high speed power switching features ? two elements each of n and p channels are in corporated (suitable for h-bridge circuit) ? high density mounting ? low on-resistance ? capable of 4 v gate drive ? high temperature d-s leakage guarantee avalanche rating outline renesas package code: prsp0008dd-d (package name: sop-8 ) 1 2 3 4 5 6 7 8 mos4 pch mos3 pch mos1 nch mos2 nch s 3 s 7 8 g 2 g 6 g 4 g d 5 d 1 1 mos1 (nch) mos4 (pch) mos1 (nch) mos1 (nch) mos2 (nch) mos2 (nch) mos2 (nch) mos3 (pch) mos3 (pch) mos3 (pch) mos4 (pch) mos4 (pch) drain 2 gate 3 source 4 gate 5 drain 6 gate 7 source 8 gate pin no. element electrode absolute maximum ratings (ta = 25c) value item symbol mos1, 2 (nch) mos3, 4 (pch) unit drain to source voltage v dss 30 ?30 v gate to source voltage v gss ? 20 ? 20 v drain current i d 3.5 ?3.5 a drain peak current i d (pulse) note 1 28 ?28 a avalanche current i ap note 4 3.5 ?3.5 a avalanche energy e ar note 4 1.22 1.22 mj channel dissipation pch note 2 1.5 w channel dissipation pch note 3 2.2 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. 1 drive operation: when usin g the glass epoxy board (fr4 40 ? 40 ? 1.6 mm), pw ? 10 s 3. 2 drive operation: when usin g the glass epoxy board (fr4 40 ? 40 ? 1.6 mm), pw ? 10 s 4. value at tch = 25 ?c, rg ? 50 ? rej03g1571-0101 rev.1.01 may 28, 2010
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 2 of 11 may 28, 2010 electrical characteristics mos1, 2 (nch) (ta = 25 ? c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ? 20 ? ? v i g = ? 100 ? a, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 30 v, v gs = 0 zero gate voltage drain current i dss ? ? 10 ? a? v ds = 24 v, v gs = 0, ta = 125 ?c gate to source leak current i gss ? ? ? 10 ? a v gs = ? 16 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 50 65 m ? i d = 2.0 a note5 , v gs = 10 v static drain to source on state resistance r ds(on) ? 70 105 m ? i d = 2.0 a note5 , v gs = 4.5 v static drain to source on state resistance r ds(on) ? 80 130 m ? i d = 2.0 a note5 , v gs = 4.0 v input capacitance ciss ? 290 ? pf output capacitance coss ? 85 ? pf reverse transfer capacitance crss ? 30 ? pf v ds = 10 v, v gs = 0 , f = 1 mhz total gate charge qg ? 5.0 ? nc gate to source charge qgs ? 1.2 ? nc gate to drain charge qgd ? 0.6 ? nc v dd = 10 v, v gs = 10 v, i d = 3.5 a turn-on delay time t d(on) ? 12 ? ns rise time t r ? 12 ? ns turn-off delay time t d(off) ? 35 ? ns fall time t f ? 8 ? ns v gs = 10 v, i d = 2.0 a, v dd ? 10 v, r l = 5 ? , r g = 4.7 ? body-drain diode forward voltage v df ? 0.88 1.15 v i f = 3.5 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 25 ? ns i f = 3.5a, v gs = 0 di f /dt = 100 a/ ? s note: 5. pulse test
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 3 of 11 may 28, 2010 mos3, 4 (pch) (ta = 25 ? c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?30 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ? 20 ? ? v i g = ? 100 ? a, v ds = 0 zero gate voltage drain current i dss ? ? ?1 ? a v ds = ?30 v, v gs = 0 zero gate voltage drain current i dss ? ? ?10 ? a? v ds = ?24 v, v gs = 0, ta = 125 ?c gate to source leak current i gss ? ? ? 10 ? a v gs = ? 16 v, v ds = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.5 v v ds = ?10 v, i d = ?1 ma static drain to source on state resistance r ds(on) ? 90 120 m ? i d = ?2.0 a note5 , v gs = ?10 v static drain to source on state resistance r ds(on) ? 140 210 m ? i d = ?2.0 a note5 , v gs = ?4.5 v static drain to source on state resistance r ds(on) ? 160 260 m ? i d = ?2.0 a note5 , v gs = ?4.0 v input capacitance ciss ? 320 ? pf output capacitance coss ? 85 ? pf reverse transfer capacitance crss ? 50 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz total gate charge qg ? 6.0 ? nc gate to source charge qgs ? 1.4 ? nc gate to drain charge qgd ? 1.0 ? nc v dd = ?10 v, v gs = ?10 v, i d = ?3.5 a turn-on delay time t d(on) ? 30 ? ns rise time t r ? 17 ? ns turn-off delay time t d(off) ? 30 ? ns fall time t f ? 7 ? ns v gs = ?10 v, i d = ?2.0 a, v dd ? ?10 v, r l = 5.0 ? , r g = 4.7 ? body-drain diode forward voltage v df ? ?0.92 ?1.2 v i f = ?3.5 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 30 ? ns i f = ?3.5 a, v gs = 0 di f /dt = 100 a/ ? s note: 5. pulse test
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 4 of 11 may 28, 2010 main characteristics mos1, 2 (nch) 10 1 0.1 110 100 10 5 0510 10 1 0.1 0.01 0.001 0.0001 0.00001 0 123 5 4 0.01 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 0.1 0.001 100 s 1 ms ta = 25c 1 shot pulse 10 s note6 dc operation (pw 10 s) 0.1 1 100 10 drain current i d (a) drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. drain current 10 1000 pw = 10 ms (1shot) v gs = 0 v pulse test 3.8 v 4.2 v 4.5 v 3.2 v 2.8 v 10 v pulse test v gs = 4 v 10 v 4.5 v case temperature tc (c) static drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. temperature 200 ?50 ? 25 0 25 50 75 100 125 150 0 50 150 100 01020 4050 30 1000 100 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage v ds = 10 v pulse test tc = 150c 25c ?40c v gs = 4 v 4.5 v 10 v pulse test i d = 2 a v gs = 0 f = 1 mhz ciss coss crss operation in this area is limited by r ds (on) note 6: when using the glass epoxy board (fr4 40 40 1.6 mm)
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 5 of 11 may 28, 2010 mos1, 2 (nch) 50 40 30 20 10 0 20 16 12 8 4 246810 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0 0.4 0.8 1.2 1.6 2.0 10 5 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) 2 1.5 1 0.5 25 50 75 100 125 150 0 channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform i d = 3.5 a v ds v gs v gs = 0 v, ?5 v 5 v pulse test 10 v l = 100 h v dd = 15 v duty < 0.1 % rg 50 v dd = 25 v 10 v 5 v v dd = 25 v 10 v 5 v
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 6 of 11 may 28, 2010 mos1, 2 (nch) vin monitor d.u.t. vin 10 v r l v ds = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 7 of 11 may 28, 2010 mos3, 4 (pch) ?10 ?1 ?0.1 ?1 ?10 ?100 ?10 ?5 0 ?5 ?10 ?0.01 ?100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ?0.1 ?0.001 ?0.1 ?1 1000 100 10 drain current i d (a) drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. drain current ?10 10000 case temperature tc (c) static drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. temperature 250 150 50 ?50 ? 25 0 25 50 75 100 125 150 0 200 100 ?0 ?10 ?20 ?40 ?50 ?30 1000 100 10 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage pulse test ?4.0 v ?3.0 v ?2.5 v ?5.0 v v gs = 0 v 100 s 1 ms ta = 25c 1 shot pulse 10 s note6 dc operation (pw 10 s) pw = 10 ms (1shot) ?4.5 v ?10 ?1 ?0.1 ?0.01 ?0.001 ?0.0001 ?0.00001 0 ?1 ?2 ?3 ?5 ?4 v ds = ?10 v pulse test tc = 150c 25c ?40c pulse test v gs = ?4 v ?10 v ?4.5 v i d = ? 2 a v gs = ? 4 v ? 4.5 v ? 10 v pulse test v gs = 0 f = 1 mhz ciss coss crss note 6: when using the glass epoxy board (fr4 40 40 1.6 mm) operation in this area is limited by r ds (on) ?10 v
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 8 of 11 may 28, 2010 mos3, 4 (pch) 0 ?10 ?20 ?30 ?40 ?50 0 0 ?4 ?8 ?12 ?16 ?20 246810 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 ?10 ?5 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) channel temperature tch (c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating v gs = 0 v, 5 v ?5 v pulse test ?10 v avalanche test circuit avalanche waveform d. u. t rg i ap monitor v ds monitor v dd 50 vin ?15 v 0 i d v ds i ap v (br)ds s l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd 2 1.5 1 0.5 25 50 75 100 125 150 0 l = 100 h v dd = ?15 v duty < 0.1 % rg 50 i d = ?3.5 a v ds v gs v dd = ?25 v ?10 v ?5 v v dd = ?25 v ?10 v ?5 v
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 9 of 11 may 28, 2010 mos3, 4 (pch) rg vin monitor d.u.t. vin ?10 v r l v dd = ?10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 10 of 11 may 28, 2010 common channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating 4.0 3.0 2.0 1.0 0 50 100 150 200 pulse width pw (s) normalized transient thermal impedance vs. pulse width (1 drive operation) normalized transient thermal impedance s (t) d = 1 0.05 0.02 0.01 1shot pulse 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125c/w, ta = 25 c when using the glass epoxy board (fr4 40x40x1.6 mm) 0.1 0.2 0.5 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 pulse width pw (s) normalized transient thermal impedance vs. pulse width (2 drive operation) dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 210c/w, ta = 25c when using the glass epoxy board (fr4 40x40x1.6 mm) normalized transient thermal impedance s (t) test condition: when using the glass epoxy board (fr4 40 40 1.6 mm), pw 10 s 2 drive operation 1 drive operation
rjm0306jsp preliminary rej03g1571-0101 rev. 1.01 page 11 of 11 may 28, 2010 package dimensions p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8dav prsp0008dd-d renesas code jeita package code previous code a 8 5 1 4 f b p c detail f terminal cross section 1.27 1.08 0.40 l 1 0.60 0.25 x 0.4 60.4 00.34 0.10 b p b 1 c 1 0.25 0.20 0.15 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z (ni/pd/au plating) 2. 1. dimensions "*1(nom)" and "*2" do n ot include mold flash. note) dimension "*3" does not include trim offset. index mark a 1 l 1 l detail f y package name sop-8 ordering information part no. quantity shipping container RJM0306JSP-00-J0 2500 pcs taping
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