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june 2007 hy[b/i]39s512400a[e/t] hy[b/i]39s512800a[e/t] hy[b/i]39s512160a[e/t] 512-mbit synchronous dram sdram rohs compliant products internet data sheet rev. 1.52
we listen to your comments any information within this document that yo u feel is wrong, unclear or missing at all? your feedback will help us to continuous ly improve the quality of this document. please send your proposal (including a reference to this document) to: techdoc@qimonda.com internet data sheet hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram qag_techdoc_rev400 / 3.2 qag / 2006-07-21 2 03292006-6y91-0t2z hy[b/i]39s512400a[e/t], hy[b/i]39s51 2800a[e/t], hy[b/i]39s512160a[e/t] revision history: 2007-06, rev. 1.52 page subjects (major chan ges since last revision) all adapted internet edition 13 corrected operation command "power down / clock suspend ...? in truth table previous revision: 2007-06, rev. 1.51 13 corrected operation command "power down exit" to x (we#) 15 corrected text to "after the mode register is set a nop command is required" , chapter 3.3 19 corrected text to "one clock delay is required for mode entry and exit", chapter 3.5 21 corrected the line "input capacitances: ck" in table 10, chapter 4 qimonda template previous revision: 2007-05, rev. 1.5 all added more product types previous revision: 2006-01, rev. 1.4 internet data sheet rev. 1.52, 2007-06 3 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram 1overview this chapter lists all main features of the product family hy[i/b]39s512[40/80/16]0a[e/t ] and the ordering information. 1.1 features ? fully synchronous to positive clock edge ? 0 to 70 c operating temperature for hyb... ? -40 to 85 c operating temperature for hyi... ? four banks controlled by ba0 & ba1 ? programmable cas latency: 2 & 3 ? programmable wrap sequence: sequential or interleave ? programmable burst length: 1, 2, 4, 8 and full page ? multiple burst read with single write operation ? automatic and controlled precharge command ? data mask for read / write control (x4, x8, x16) ? data mask for byte control (x16) ? auto refresh (cbr) and self refresh ? power down and clock suspend mode ? 8192 refresh cycles / 64 ms (7.8 s) ? random column address every clk (1-n rule) ? single 3.3 v 0.3 v power supply ? lvttl interface ? plastic package : p(g)-tsopii-54 ? rohs compliant product table 1 performance product type speed code ?7.5 unit speed grade pc133?333 1) 1) max. frequency cl/ t rcd / t rp ? max. clock frequency @cl3 f ck3 133 mhz t ck3 7.5 ns t ac3 5.4 ns @cl2 t ck2 10 ns t ac2 6ns internet data sheet rev. 1.52, 2007-06 4 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram 1.2 description the hy[i/b]39s512[40/ 80/16]0a[e/t] are f our bank synchronous dram?s organized as 4 banks 32mbit 4, 4 banks 16mbit 8 and 4 banks 8mbit 16 respectively . these synchronous devices achieve high speed data transfer rates for cas latencies by employing a chip architecture that pr efetches multiple bits and then synchronizes the output data to a system clock. the chip is fabr icated with qimo nda advanced 0.14 m 512-mbit dram process technology. the device is designed to comply with all industry standard s set for synchronous dram products, both electrically and mechanically. all of the control, address, da ta input and output circuits are synchroni zed with the positive edge of an externa lly supplied clock. operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard drams. a sequential and gapless data ra te is possible depending on burst length, cas latency and speed grade of the device. auto refresh (cbr) and self refresh oper ation are supported. these devices operate with a single 3.3 v 0.3 v power supply. all 512-mbit components are avail able in p(g)-tsopii-54 packages. table 2 ordering information for rohs compliant products product type speed grade description package note standard operating temperature (0 c - +70 c) hyb39s512400at-7.5 pc133-333-520 133mhz 4b 32m 4 sdram p-tsopii-54 hyb39s512800at-7.5 133mhz 4b 16m 8 sdram hyb39s512160at-7.5 133mhz 4b 8m 16 sdram hyb39s512400ae-7.5 133mhz 4b 32m 4 sdram pg-tsopii-54 1) 1) rohs compliant product: restriction of the use of certain hazar dous substances (rohs) in el ectrical and electronic equipment as defined in the directive 2002/95/ec issued by the european parliament and of the council of 27 january 2003. these substances include m ercury, lead, cadmium, hexavalent chromium, polybro minated biphenyls and polybrominated biphenyl ethers. hyb39s512800ae-7.5 133mhz 4b 16m 8 sdram hyb39s512160ae-7.5 133mhz 4b 8m 16 sdram industrial operating temperature (?40 c - +85 c) hyi39s512400at-7.5 pc133-333-520 133mhz 4b 32m 4 sdram p-tsopii-54 hyi39s512800at-7.5 133mhz 4b 16m 8 sdram hyi39s512160at-7.5 133mhz 4b 8m 16 sdram hyi39s512400ae-7.5 133mhz 4b 32m 4 sdram pg-tsopii-54 1) hyi39s512800ae-7.5 133mhz 4b 16m 8 sdram hyi39s512160ae-7.5 133mhz 4b 8m 16 sdram internet data sheet rev. 1.52, 2007-06 5 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram 2 configuration this chapter contains the pin configuration table and the tsop package drawing. 2.1 pin configuration listed below are the pin configurations sect ions for the various signals of the sdram. table 3 ball configuration of the sdram ball no. name pin type buffer type function clock signals x4/ x8/ x16 organization 38 clk i lvttl clock signal clk 37 cke i lvttl clock enable control signals x4/ x8/ x16 organization 18 ras ilvttl row address strobe (ras), column addr ess strobe (cas), write enable (we) 17 cas ilvttl 16 we ilvttl 19 cs ilvttl chip select address signals x4/ x8/ x16 organization 20 ba0 i lvttl bank address signals 1:0 21 ba1 i lvttl 23 a0 i lvttl address signal 9:0, address signal 10/auto precharge 24 a1 i lvttl 25 a2 i lvttl 26 a3 i lvttl 29 a4 i lvttl 30 a5 i lvttl 31 a6 i lvttl 32 a7 i lvttl 33 a8 i lvttl 34 a9 i lvttl 22 a10 i lvttl 35 a11 i lvttl 36 a12 i lvttl internet data sheet rev. 1.52, 2007-06 6 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram data signals x4 organization 5 dq0 i/o lvttl data signal bus [3:0] 11 dq1 i/o lvttl 44 dq2 i/o lvttl 50 dq3 i/o lvttl data signals x8 organization 2 dq0 i/o lvttl data signal bus [7:0] 5 dq1 i/o lvttl 8 dq2 i/o lvttl 11 dq3 i/o lvttl 44 dq4 i/o lvttl 47 dq5 i/o lvttl 50 dq6 i/o lvttl 53 dq7 i/o lvttl data signals x16 organization 2 dq0 i/o lvttl data signal bus [15:0] 4 dq1 i/o lvttl 5 dq2 i/o lvttl 7 dq3 i/o lvttl 8 dq4 i/o lvttl 10 dq5 i/o lvttl 11 dq6 i/o lvttl 13 dq7 i/o lvttl 42 dq8 i/o lvttl 44 dq9 i/o lvttl 45 dq10 i/o lvttl 47 dq11 i/o lvttl 48 dq12 i/o lvttl 50 dq13 i/o lvttl 51 dq14 i/o lvttl 53 dq15 i/o lvttl data mask x4 / x8 organization 39 dqm i/o lvttl data mask data mask x16 organization 39 udqm i/o lvttl data mask upper byte 15 ldqm i/o lvttl data mask lower byte power supplies x4 /x8/ x16 organization 3, 43, 49 v ddq pwr ? power supply 1, 14 v dd pwr ? power supply ball no. name pin type buffer type function internet data sheet rev. 1.52, 2007-06 7 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram 6, 12, 46, 52 v ssq pwr ? power supply ground for dqs 28, 41, 54 v ss pwr ? power supply ground not connected x4 organization 2, 4, 7, 8, 10, 13, 15, 40, 42, 45, 47, 48, 51, 53 nc nc ? not connected not connected x8 organization 4, 7, 10, 13, 15, 40, 42, 45, 48, 51 nc nc ? not connected not connected x16 organization 40 nc nc ? not connected ball no. name pin type buffer type function internet data sheet rev. 1.52, 2007-06 8 03292006-6y91-0t2z hy[i/b]39s512[40/80/16]0a[e/t] 512-mbit synchronous dram figure 1 ball configuration p(g)-tsopii-54 0 3 3 6 9 ' ' ' 4 9 ' ' 4 9 6 6 4 ' 4 ' 4 9 ' ' 4 ' 4 ' 4 ' 4 ' 4 9 6 6 4 ' 4 9 ' ' / ' 4 0 : ( & |