PZT559A pnp silicon silicon planar medium power transistor elektronische bauelemente 28-apr-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 3 emitter collector 2 4 rohs compliant product a suffix of -c specifies halogen & lead-free description the PZT559A is designed for general purpose swi tching and amplifier applications. features 4 amps continuous current, up to 10 amps peak curre nt. excellent gain characteristic specified up to 3 amp s very low saturation voltages marking package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector to base voltage v cbo -180 v collector to emitter voltage v ceo -140 v emitter to base voltage v ebo -7 v collector current (dc) i c -4 a collector current (pulse) i cm -10 a total power dissipation 1 p d 3 w total power dissipation 2 1.6 w junction, storage temperature t j , t stg +150, -55~150 notes 1. surface mounted on 52mm x 52mm x 1.6mm copper pa d of fr4 board. 2. surface mounted on 25mm x 25mm x 1.6mm copper pa d of fr4 board. ref. millimeter ref. millimeter min. max. min. max. a 6.30 6.70 g 0.02 0.10 b 6.70 7.30 h 1.50 2.00 c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k 0.85 1.05 e 4.60 ref. l 2.30 ref. f 0.60 0.80 m 2.90 3.10 i 0.02 0.10 n 13 typ. o 0 10 sot-223 559a date code
PZT559A pnp silicon silicon planar medium power transistor elektronische bauelemente 28-apr-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector - base breakdown voltage bv cbo -180 - - v i c = -100ua, i e =0 increased operating voltage bv cer -180 - - v i c = -1ua, r b Q 1k collector - emitter breakdown voltage bv ceo -140 - - v i c = -10ma, i b =0 emitter - base breakdown voltage bv ebo -7 - - v i e = -100ua, i c =0 collector cut - off current i cbo - - -20 na v cb = -150v, i e =0 i cer - - -20 na v cb = -150v, r Q 1k emitter cut - off current i ebo - - -10 na veb= -6v, i c =0 collector - emitter saturation voltage v ce(sat)1 - -40 -60 mv i c = -100ma, i b = -5ma v ce(sat)2 - -55 -80 mv i c = -500ma, i b = -50ma v ce(sat)3 - -85 -120 mv i c = -1a, i b = -100ma v ce(sat)4 - -250 -360 mv i c = -3a, i b = -300ma base - emitter voltage v be(sat) - -940 -1.04 v i c = -3a, i b = -300ma v be(on) - -830 -0.93 v v ce = -5v, i c = -3a dc current gain *h fe1 100 225 - v ce = -5v, i c = -10 ma *h fe2 100 200 300 v ce = -5v, i c = -1a *h fe3 45 80 - v ce = -5v, i c = -3a *h fe4 - 5 - v ce = -5v, i c = -10a transition frequency f t - 120 - mhz v ce = - 1 0 v, i c = - 10 0ma, f=50 mhz collector output capacitance c ob - 33 - pf v cb = -10 v, f=1 mhz switching time turn-on t on - 42 - ns v cc = -50v, i c = -1a, i b1 = -i b2 = -100ma turn-off t off - 636 - *measured under pulsed condition. pulse width = 300 us, duty cycle Q 2 %
PZT559A pnp silicon silicon planar medium power transistor elektronische bauelemente 28-apr-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
PZT559A pnp silicon silicon planar medium power transistor elektronische bauelemente 28-apr-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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