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www.irf.com 1 3/16/04 irf6618/IRF6618TR1 hexfet power mosfet notes through are on page 9 application specific mosfets ideal for cpu core dc-dc converters low conduction losses low switching losses low profile (<0.7 mm) dual sided cooling compatible compatible with existing surface mount techniques description the irf6618 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package is compatible with existing layo ut geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-10 35 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power syst ems, improving previous best thermal resistance by 80%. the irf6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and s witching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors operat ing at higher frequencies. the irf6618 has been optimized for parameters that are critical in synchronous buck converters including rds(on), gate charge and c dv/dt-induced turn on immunity. the irf6618 offers particularly low rds(on) and high cdv/dt immunity for synchronous fet applications . v dss r ds(on) max qg 30v 2.2m ? @v gs = 10v 43 nc 3.4m ? @v gs = 4.5v applicable directfet package/layout pad (see p.8,9 for details) sq sx st mq mx mt ab so l ute m ax i mum r at i ngs parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v a i d @ t a = 70c continuous drain current, v gs @ 10v i dm p u l se d d ra i n c urren t p d @t a = 25c p ower di ss i pa ti on p d @t a = 70c p ower di ss i pa ti on w p d @t c = 25c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range a va l anc h e ch aracter i st i cs parameter typ. max. units e as si ng l e p u l se a va l anc h e e nergy ??? 210 mj i ar a va l anc h e c urren t ??? 24 a th erma l r es i stance parameter typ. max. units r ja j unct i on-to- a m bi ent ??? 45 r ja j unct i on-to- a m bi ent 12.5 ??? r ja j unc ti on- t o- a m bi en t 20 ??? c/w r jc j unc ti on- t o- c ase ??? 1.4 r j-pcb junction-to-pcb mounted 1.0 ??? -40 to + 150 2.8 0.022 1.8 89 max. 30 24 240 20 30 150 directfet isometric

2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 23 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 1.7 2.2 m ? ??? ??? 3.4 v gs(th) gate threshold voltage 1.35 1.64 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.7 ??? mv/c ??? ??? 5.0 i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 100 ??? ??? s q g total gate charge ??? 43 65 q gs1 pre-vth gate-to-source charge ??? 12 ??? q gs2 post-vth gate-to-source charge ??? 4.0 ??? nc q gd gate-to-drain charge ??? 15 23 q godr gate charge overdrive ??? 12 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 19 ??? q oss output charge ??? 28 ??? nc r g gate resistance ??? 1.0 2.2 ? t d(on) turn-on delay time ??? 21 ??? t r rise time ??? 71 ??? t d(off) turn-off delay time ??? 27 ??? ns t f fall time ??? 8.1 ??? c iss input capacitance ??? 5640 ??? c oss output capacitance ??? 1260 ??? pf c rss reverse transfer capacitance ??? 570 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 30 (body diode) a i sm pulsed source current ??? ??? 240 ( bod y diode ) v sd diode forward voltage ??? 0.78 1.2 v t rr reverse recovery time ??? 43 65 ns q rr reverse recovery charge ??? 46 69 nc mosfet symbol clamped inductive load v ds = 15v, i d = 24a conditions ? = 1.0mhz v ds = 15v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = 15v v ds = 24v, v gs = 0v, t j = 150c v gs = 20v v gs = -20v v gs = 4.5v v gs = 4.5v, i d = 24a v ds = v gs , i d = 250a v ds = 24v, v gs = 0v v ds = 30v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 30a t j = 25c, i f = 24a di/dt = 100a/s t j = 25c, i s = 24a, v gs = 0v showing the integral reverse p-n junction diode. i d = 24a v gs = 0v v ds = 15v i d = 24a
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.2v 2.9v bottom 2.7v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 24a
4 www.irf.com fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 10. threshold voltage vs. temperature fig 9. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 t j , junction temperature (c) 0 30 60 90 120 150 i d , d r a i n c u r r e n t ( a ) 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100sec t c = 25c tj = 150c single pulse 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 11. maximum effective transient thermal impedance, junction-to-ambient 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.6784 0.00086 17.299 0.57756 17.566 8.94 9.4701 106
www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 16. switching time test circuit fig 17. switching time waveforms fig 12. on-resistance vs. gate voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15. gate charge test circuit fig 14. unclamped inductive test circuit and waveform v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - v gs v ds 90% 10% t d(on) t d(off) t r t f 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.3a 11a bottom 24a 2 3 4 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 30a t j = 25c t j = 125c t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vgs
6 www.irf.com fig 15.
for n-channel hexfet power mosfets
?
? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ?
?
!"!! ?

# $$ ? !"!!%" fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
www.irf.com 7 directfet outline dimension, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs.
8 www.irf.com directfet board footprint, mt outline (medium size can, t-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet tape & reel dimension (showing component orientation). metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6618). for 1000 parts on 7" reel, order IRF6618TR1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/04 directfet part marking
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.75mh, r g = 25 ? , i as = 24a. pulse width 400s; duty cycle 2%. surface mounted on 1 in. square cu board. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermal couple mounted to top (drain) of part. r is measured at t j of approximately 90c.

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