1 file number 4680.2 caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 2000 saber is a trademark of analogy, inc. hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns 13a, 1200v, npt series n-channel igbt the hgtd2n120cns, hgtp2n120cn, and hgt1s2n120cns are n on- p unch t hrough (npt) igbt designs. they are new members of the mos gated high voltage switching igbt family. igbts combine the best features of mosfets and bipolar transistors. this device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49313. symbol features 13a, 1200v, t c = 25 o c 1200v switching soa capability typical fall time. . . . . . . . . . . . . . . . 360ns at t j = 150 o c short circuit rating low conduction loss avalanche rated temperature compensating saber model thermal impedance spice model www.intersil.com related literature - tb334 ?uidelines for soldering surface mount components to pc boards packaging jedec to-220ab jedec to-252aa jedec to-263ab ordering information part number package brand hgtp2n120cn to-220ab 2n120cn hgtd2n120cns to-252aa 2n120c hgt1s2n120cns to-263ab 2n120cn note: when ordering, use the entire part number. add the suf? 9a to obtain the to-263ab and to-252aa variant in tape and reel, e.g., HGT1S2N120CNS9A. c e g g c e collector (flange) g collector e (flange) g collector e (flange) intersil corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet january 2000
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d hgtd2n120cns hgtp2n120cn, hgt1s2n120cns units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 1200 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 13 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 7a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 20 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 13a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 104 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 w/ o c forward voltage avalanche energy (note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e av 18 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j ,t stg -55 to 150 o c maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 300 o c package body for 10s, see tech brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t pkg 260 o c short circuit withstand time (note 3) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 8 s caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. i ce = 3a, l = 4mh. 3. v ce(pk) = 840v, t j = 125 o c, r g = 51 ? . electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 1200 - - v emitter to collector breakdown voltage bv ecs i c = 10ma, v ge = 0v 15 - - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 100 a t c = 125 o c - 100 - a t c = 150 o c - - 1.0 ma collector to emitter saturation voltage v ce(sat) i c = 2.6a, v ge = 15v t c = 25 o c - 2.05 2.40 v t c = 150 o c - 2.75 3.50 v gate to emitter threshold voltage v ge(th) i c = 45 a, v ce = v ge 6.4 6.7 - v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 51 ?, v ge = 15v, l = 5mh, v ce(pk) = 1200v 13 - - a gate to emitter plateau voltage v gep i c = 2.6a, v ce = 0.5 bv ces - 10.2 - v on-state gate charge q g(on) i c = 2.6a, v ce = 0.5 bv ces v ge = 15v - 30 36 nc v ge = 20v - 36 43 nc hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns
3 current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 2.6a v ce = 0.8 bv ces v ge = 15v r g = 51 ? l = 5mh test circuit (figure 18) -2530ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 205 220 ns current fall time t fi - 260 320 ns turn-on energy (note 4) e on1 -96 - j turn-on energy (note 4) e on2 - 425 590 j turn-off energy (note 5) e off - 355 390 j current turn-on delay time t d(on)i igbt and diode at t j = 150 o c, i ce = 2.6a, v ce = 0.8 bv ces , v ge = 15v, r g = 51 ?, l = 5mh, test circuit (figure 18) -2125ns current rise time t ri -1115ns current turn-off delay time t d(off)i - 225 240 ns current fall time t fi - 360 420 ns turn-on energy (note 4) e on1 -96 - j turn-on energy (note 4) e on2 - 800 1100 j turn-off energy (note 5) e off - 530 580 j thermal resistance junction to case r jc - - 1.20 o c/w notes: 4. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 18. 5. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. electrical speci?ations t c = 25 o c, unless otherwise speci?d (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise speci?d figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area t c , case temperature ( o c) i ce , dc collector current (a) 50 0 25 75 100 125 150 2 10 v ge = 15v 12 14 8 6 4 v ce , collector to emitter voltage (v) 1400 10 0 i ce , collector to emitter current (a) 4 6 600 800 400 200 1000 1200 0 12 14 8 2 t j = 150 o c, r g = 51 ? , v ge = 15v, l = 5mh 16 hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns
4 figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise speci?d (continued) f max , operating frequency (khz) i ce , collector to emitter current (a) 10 5 50 100 200 f max1 = 0.05 / (t d(off)i + t d(on)i ) r jc = 1.2 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) t c v ge 12v 15v 110 o c 110 o c t j = 150 o c, r g = 51 ? , v ge = 15v, l = 5mh 134 2 ideal diode t c = 75 o c,v ge = 15v t c v ge 75 o c 12v 75 o c 15v v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 20 30 40 50 10 0 20 30 40 50 10 0 10 14 15 13 12 11 v ce = 840v, r g = 51 ? , t j = 125 o c i sc t sc 012 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 2 4 345 10 8 6 t c = 25 o c t c = 150 o c 250 s pulse test duty cycle <0.5%, v ge = 12v t c = -55 o c 6 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 2 4 6 012345 8 0 10 t c = 25 o c t c = 150 o c t c = -55 o c duty cycle <0.5%, v ge = 15v 250 s pulse test e on2 , turn-on energy loss ( j) 1500 i ce , collector to emitter current (a) 1000 500 2.5 1.5 3.5 3.0 2.0 1.0 4.0 4.5 5.0 2000 0 t j = 150 o c, v ge = 12v, v ge = 15v r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, v ge = 12v, v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 3.0 2.0 1.5 2.5 3.5 1.0 300 200 400 500 4.5 4.0 600 700 800 900 5.0 r g = 51 ? , l = 5mh, v ce = 960v t j = 150 o c, v ge = 12v or 15v t j = 25 o c, v ge = 12v or 15v 100 hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns
5 figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveforms typical performance curves unless otherwise speci?d (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 1.5 1.0 2.0 3.0 20 30 2.5 3.5 4.5 4.0 5.0 40 35 25 15 r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 12v 45 t j = 25 o c, t j = 150 o c, v ge = 15v i ce , collector to emitter current (a) t ri , rise time (ns) 0 10 15 40 20 2.0 1.0 30 1.5 3.5 3.0 2.5 25 5.0 4.5 4.0 35 r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, t j = 150 o c, v ge = 12v t j = 25 o c, t j = 150 o c, v ge = 15v 5 5.0 100 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 400 350 300 250 200 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 150 v ge = 12v, v ge = 15v, t j = 150 o c r g = 51 ? , l = 5mh, v ce = 960v v ge = 12v, v ge = 15v, t j = 25 o c i ce , collector to emitter current (a) t fi , fall time (ns) 500 300 700 400 600 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t j = 150 o c, v ge = 12v or 15v r g = 51 ? , l = 5mh, v ce = 960v t j = 25 o c, v ge = 12v or 15v 200 100 i ce , collector to emitter current (a) 0 5 10 15 13 78910 12 v ge , gate to emitter voltage (v) 11 20 25 30 14 15 35 t c = 150 o c t c = -55 o c t c = 25 o c 40 250 s pulse test duty cycle <0.5%, v ce = 20v v ge , gate to emitter voltage (v) q g , gate charge (nc) 14 16 30 25 20 10 12 15 10 5 0 8 6 4 2 0 v ce = 1200v v ce = 400v v ce = 800v i g(ref) = 1ma, r l = 260 ? , t c = 25 o c hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns
6 figure 15. capacitance vs collector to emitter voltage figure 16. collector to emitter on-state voltage figure 17. normalized transient thermal response, junction to case test circuit and waveforms figure 18. inductive switching test circuit figure 19. switching test waveforms typical performance curves unless otherwise speci?d (continued) v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 0.5 c ies c oes 1.0 c res frequency = 1mhz c, capacitance (nf) 1.5 2.0 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 v ge = 10v v ge = 15v duty cycle <0.5%, t c = 110 o c 250 s pulse test t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.5 0.2 0.1 0.05 0.02 0.01 t 1 t 2 p d r g = 51 ? l = 5mh v dd = 960v + - rhrd4120 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns
7 handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?ccosorbd ld26?or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or ?ating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required, an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a speci? application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ed by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other de?itions are possible. t d(off)i and t d(on)i are de?ed in figure 19. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce x i ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 19. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgtd2n120cns, hgtp2n120cn, hgt1s2n120cns eccosorbd is a trademark of emerson and cumming, inc.
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