the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2002 junction field effect transistor 2SK3653 n-channel silicon junction field effect transistor for impedance converter of ecm data sheet document no. d16293ej1v0ds00 (1st edition) date published june 2002 ns cp(k) printed in japan description the 2SK3653 is suitable for converter of ecm. features ? compact package ? high forward transfer admittance 1000 s typ. (i dss = 100 a) 1600 s typ. (i dss = 200 a) ? includes diode and high resistance at g - s ordering information part number package 2SK3653 3pinxsof (0814) absolute maximum ratings (t a = 25c) drain to source voltage note1 v dsx 20 v gate to drain voltage v gdo ?20 v drain current i d 10 ma gate current i g 10 ma total power dissipation note2 p t 80 mw junction temperature t j 125 c storage temperature t stg ?55 to +125 c notes 1. v gs = ?1.0 v 2. mounted on ceramic substrate of 3.0 cm 2 x 0.64 mm remark please take care of esd (electro static discharge) when you handle the device in this document. package drawing (unit: mm) 0.3 0.05 1.2 0.1 max. 0.4 0.8 0.1 d 0.9 1.4 0.1 g s 0 ~ 0.05 0 .13 +0.1 ?0.05 0.2 +0.1 ?0 equivalent circuit source gate drain
data sheet d16293ej1v0ds 2 2SK3653 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain cut-off current i dss1 v ds = 2.0 v, v gs = 0 v 38 570 a zero gate voltage drain cut-off current i dss2 v ds = 5.0 v, v gs = 0 v 40 600 a gate cut-off voltage v gs(off) v ds = 5.0 v, i d = 1.0 a ? 0.1 ? 1.0 v forward transfer admittance | y fs1 |v ds = 5.0 v, i d = 30 a, f = 1.0 khz 350 s forward transfer admittance | y fs2 |v ds = 5.0 v, v gs = 0 v, f = 1.0 khz 350 s input capacitance c iss v ds = 5.0 v, v gs = 0 v, f = 1.0 mhz 7.0 8.0 pf noise voltage nv see test circuit 1.8 3.0 v i dss rank markingj2j3j4j5j6j7 i dss1 ( a) v ds = 2.0 v 38 to 65 56 to 105 85 to 170 140 to 280 185 to 425 280 to 570 noise voltage test circuit nv (r.m.s) r = 1 k ? c = 10 pf +4.5 v jis a
data sheet d16293ej1v0ds 3 2SK3653 typical characteristics (t a = 25c) 20 40 60 80 100 120 140 160 0 0 40 20 80 60 100 derating factor of power dissipation t a - ambient temperature - ?c dt - derating factor - % v gs - gate to source voltage - v i g - gate current - a gate to source current vs. gate to source voltage 0 10 20 30 ? 30 ? 40 ? 20 ? 10 40 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 1.0 0.8 0.6 0.4 0.2 drain current vs. gate to source voltage v gs - gate to source voltage - v i d - drain current - ma ? 0.6 ? 0.4 ? 0.2 0 +0.2 0.2 0.6 0.4 0.8 1 v ds = 5.0 v i d s s = 3 0 0 a i d s s = 2 0 0 a i d s s = 1 0 0 a input capacitance vs. drain to source voltage 10 20 50 100 v ds - drain to source voltage - v c iss - input capacitance - pf 10 20 50 100 1 2 5 15 2 v ds = 0 v f = 1.0 mhz gate cut-off voltage and forward transfer admittance vs. zero-gate voltage drain current co-relation zero-gate voltage drain current - a v gs (off) - gate cut-off voltage - v |y fs | - forward transfer admittance - s v ds = 5.0 v 1 0.5 0.2 0.1 0.05 0.02 10 20 50 100 200 500 1000 0.01 5 2 10 v gs (off) |y fs |
data sheet d16293ej1v0ds 4 2SK3653 rank: j2 drain current vs. drain to source voltage 100 150 200 250 v ds - drain to source voltage - v i d - drain current - a 50 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v v gs = 0 v ? 0.15 v rank: j3 drain current vs. drain to source voltage 120 180 240 300 v ds - drain to source voltage - v i d - drain current - a 60 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v v gs = 0 v ? 0.15 v rank: j4 drain current vs. drain to source voltage 160 240 320 400 v ds - drain to source voltage - v i d - drain current - a 80 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v v gs = 0 v ? 0.15 v rank: j5 drain current vs. drain to source voltage 200 300 400 500 v ds - drain to source voltage - v i d - drain current - a 100 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v ? 0.15 v v gs = 0 v rank: j6 drain current vs. drain to source voltage 280 420 560 700 v ds - drain to source voltage - v i d - drain current - a 140 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v v gs = 0 v ? 0.15 v rank: j7 drain current vs. drain to source voltage 360 540 720 900 v ds - drain to source voltage - v i d - drain current - a 180 0 10 024 68 ? 0.05 v 0.15 v 0.10 v 0.05 v ? 0.10 v v gs = 0 v ? 0.15 v
data sheet d16293ej1v0ds 5 2SK3653 [memo]
2SK3653 m8e 00. 4 the information in this document is current as of june, 2002. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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