291 silicon mos fets (small signal) marking symbol: 3o internal connection 1: gate 2: source eiaj: sc-70 3: drain s-mini type package (3-pin) 2.10.1 1.30.1 0.90.1 0.70.1 0.3 +0.1 0 0.15 +0.1 0.05 2.00.2 1.250.1 0.425 0.425 1 3 2 0.65 0.2 0.65 0 to 0.1 0.20.1 g r 1 d s r 2 2sk0665 (2sk665) silicon n-channel mos fet for switching features high-speed switching small drive current owing to high input inpedance high electrostatic breakdown voltage absolute maximum ratings (ta = 25c) parameter drain to source voltage gate to source voltage drain current max drain current allowable power dissipation channel temperature storage temperature symbol v ds v gso i d i dp p d t ch t stg ratings 20 8 100 200 150 150 ? 55 to +150 unit v v ma ma mw c c electrical characteristics (ta = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance high level output voltage low level output voltage input resistance turn-on time turn-off time symbol i dss i gss v dss v th r ds(on) * 3 | y fs | v oh v sl r 1 + r 2 * 1 t on * 2 t off * 2 conditions v ds = 10v, v gs = 0 v gs = 8v, v ds = 0 i d = 100 a, v gs = 0 i d = 100 a, v ds = v gs i d = 20ma, v gs = 5v i d = 20ma, v ds = 5v, f = 1khz v dd = 5v, v gs = 1v, r l = 200 ? v dd = 5v, v gs = 5v, r l = 200 ? v dd = 5v, v gs = 0 to 5v, r l = 200 ? v dd = 5v, v gs = 5 to 0v, r l = 200 ? * 1 resistance ratio r 1 /r 2 = 1/50 * 2 t on , t off measurement circuit * 3 pulse measurement min 40 20 1.5 20 4.5 100 typ unit a a v v ? ms v v k ? s s max 10 80 3.5 50 1 200 1 1 v out v dd = 5v v gs = 5v 50 ? 200 ? 100 f v in 90% 10% 10% 90% v out t on t off unit: mm note) the part number in the parenthesis shows conventional part number.
292 silicon mos fets (small signal) p d ? ta i d ? v ds i d ? v gs | y fs | ? v gs c iss , c oss ? v ds r ds(on) ? v gs v in ? i o 2sk0665 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ? c ) allowable power dissipation p d ( mw ) 010 8 26 4 0 120 100 80 60 40 20 ta=25 ? c 5.5v 5.0v 4.0v 3.0v 4.5v 3.5v v gs =6.0v drain to source voltage v ds ( v ) drain current i d ( ma ) 010 8 26 4 0 120 100 80 60 40 20 v ds =5v ta= 25 ? c 25 ? c 75 ? c gate to source voltage v gs ( v ) drain current i d ( ma ) 010 8 26 4 0 50 40 30 20 10 v ds =5v ta=25 ? c gate to source voltage v gs ( v ) forward transfer admittance |y fs | ( ms ) 0.1 1 10 100 0.3 3 30 0 12 10 8 6 4 2 v gs =0 f=1mhz ta=25 ? c c iss c oss drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) c iss ,c oss ( pf ) 010 8 26 4 0 120 100 80 60 40 20 ta=75 ? c 25 ? c 25 ? c i d =20ma gate to source voltage v gs ( v ) drain to source on-resistance r ds(on) ( ? ) 0.1 1 10 100 0.3 3 30 0.1 0.3 1 3 10 30 100 300 1000 v o =1v ta=25 ? c output current i o ( ma ) input voltage v in ( v )
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