1 transistor 2sd0662, 2sd0662b (2sd662, 2sd662b) silicon npn epitaxial planer type for high breakdown voltage general amplification features high collector to emitter voltage v ceo . high transition frequency f t . m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:sc?1 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 250 400 200 400 5 100 70 600 150 ?5 ~ +150 unit v v v ma ma mw ?c ?c 2sd0662 2sd0662b 2sd0662 2sd0662b electrical characteristics (ta=25?c) parameter collector cutoff current collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i ceo v ceo v ebo h fe * v ce(sat) f t c ob conditions v ce = 100v, i b = 0 i c = 100 a, i b = 0 i e = 10 a, i c = 0 v ce = 10v, i c = 5ma i c = 50ma, i b = 5ma v cb = 10v, i e = ?0ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 200 400 5 30 30 50 typ 80 5 max 2 220 150 1.2 10 unit a v v v mhz pf * h fe rank classification rank p q r h fe 30 ~ 100 60 ~ 150 100 ~ 220 2sd0662 2sd0662b 2sd0662 2sd0662b note.) the part numbers in the parenthesis show conventional part number.
2 transistor 2sd0662, 2sd0662b p c ta i c v ce i c v be i c i b v ce(sat) i c i b v be h fe i c f t i e i cbo ta 0 200 160 40 120 80 0 800 600 200 500 700 400 100 300 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 010 8 26 4 0 120 100 80 60 40 20 ta=25 ? c i b =2.0ma 0.2ma 0.4ma 0.6ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =10v ta=75 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( ma ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =10v ta=25 ? c base current i b ( ma ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25 ? c 25 ? c ta=75 ? c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0 1.0 0.8 0.2 0.6 0.4 0 3.0 2.5 2.0 1.5 1.0 0.5 v ce =10v ta=25 ? c base to emitter voltage v be ( v ) base current i b ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0 360 300 240 180 120 60 v ce =10v ta=75 ? c 25 ? c 25 ? c collector current i c ( ma ) forward current transfer ratio h fe 1 3 10 30 100 0 160 120 40 100 140 80 20 60 v cb =10v ta=25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v cb =250v ambient temperature ta ( ? c ) i cbo ( ta ) i cbo ( ta=25 ? c )
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