final sidc00d60sic2 edited by infineon technologies ai ps dd hv3, l4834a , edition 1, 28.02.2003 silicon carbide schottky diode applications: smps, pfc, snubber features: worlds first 600v schottky diode revolutionary semiconductor material - silicon carbide switching behavior benchmark no reverse recovery no temperature influence on the switching behavior ideal diode for po wer factor correction no forward recovery a c chip type v br i f die size package ordering code sidc00d60sic2 600v 2a 0.84 x 0.59 mm 2 sawn on foil q67050 - a4201 - a101 sidc00d60sic2 600v 2a 0.84 x 0.59 mm 2 unsawn q67050 - a4201 - a102 mechanical parameter: raster size 0.84 x 0.59 anode pad size 0.632 x 0.382 mm area total / active 0.496 / 0.255 mm 2 thickness 401 m wafer size 50 mm flat position 0 deg max. possible chips per wafer 3473 pcs passivation frontside photoimide anode metalization 3200 nm al cathode metalization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 125m reject ink dot siz e ? 3 0.2 mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
final sidc00d60sic2 edited by infineon technologies ai ps dd hv3, l4834a , edition 1, 28.02.2003 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 600 surge peak reve rse voltage v rsm 600 v continuous forward current limited by t jmax i f 2 single pulse forward current (depending on wire bond configuration) i fsm t c =25 c, t p =10 ms sinusoidal 4.1 maximum repetitive forward current limited by t jmax i frm t c = 100 c , t j =150 c, d=0.1 7.3 non repetitive peak forward current i fmax t c =25 c, tp=10s 17 a operating junction and storage temperature t j , t stg - 55...+175 c static electrical characteristics (tested on chip), t j =25 c, unle ss otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =600v* t j =25 c 7 100 a forward voltage drop v f i f =2a t j =25 c 1.6 2 v * blocking characteristic measured under protective gas atmosphere. chip should not be used without being embedded in pottant with breakdown field strength lower than 9 kv/mm at full blocking voltage. dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol condi tions min. typ. max. unit total capacitive charge q c i f =2a di/dt=200a/ m s v r =400v t j = 150 c 4.6 nc switching time t rr i f =2a di/dt=200a/ m s v r = 400v t j = 150 c n.a. ns v r =1v 50 v r =300v 5.2 total capacitance c i f =2a di/dt=200a/ m s t j =25 c f=1mhz v r =600v 5 pf
final sidc00d60sic2 edited by infineon technologies ai ps dd hv3, l4834a , edition 1, 28.02.2003 chip drawing:
final sidc00d60sic2 edited by infineon technologies ai ps dd hv3, l4834a , edition 1, 28.02.2003 further electrical characteristics: this chip data sheet refers to the device d ata sheet infineon technologies sdp02s60 description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristic s. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an ap proved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address l ist). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support d evices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may b e endangered.
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