symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as static electrical characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. 050-5896 rev a 5-2002 characteristic / test conditions / part number drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d (on) x r ds (on) max, v gs = 8v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d [cont.]) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) min typ max 500 58 0.09 25 250 100 24 unit volts amps ohms a na volts symbol bv dss i d (on) r ds (on) i dss i gss v gs (th) usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com linear mosfet linear mosfets are optimized applications operating in the linear region where concurrent high voltage and high current can occur at near dc conditions (>100 msec). ? higher fbsoa ? higher power dissipation ? popular t-max? or to-264 package parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj apl 502 500 58 232 30 40 730 5.84 -55 to 150 300 58 50 3000 t-max ? to-264 b2 APL502B2 apl502l 500v 58a 0.090 g d s l test conditions / part number v ds = 400 v, i ds = 1.063a, t = 20 sec., t c = 60c watts symbol soa1 min typ max 425 unit characteristic safe operating area safe operating area characteristics
dynamic characteristics apl502 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.3 0.1 0.05 0.01 0.005 0.001 z jc , thermal impedance (c/w) note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 050-5896 rev a 5-2002 symbol c iss c oss c rss t d (on) t r t d (off) t f min typ max 7485 9000 1290 1810 617 930 13 26 27 54 56 84 16 20 unit pf ns test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal characteristics i d , drain current (amperes) i d , drain current (amperes) 120 80 60 40 20 10 0 120 80 60 40 20 10 0 0 50 100 150 200 250 0 5 10 15 20 25 30 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, high voltage output characteristics figure 3,low voltage output characteristics 7 v 6 v 6.5 v v gs =10v, 15 v 5.5 v 7 v 6 v 6.5 v 5.5 v 7.5 v v gs =10, 15v characteristic junction to case junction to ambient symbol r jc r ja min typ max .17 40 unit c/w 7.5 v 8 v 8 v 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 1.78mh, r g = 25 ? , peak i l = 58a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein.
i d , drain current (amperes) r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) c, capacitance (pf) v gs (th), threshold voltage bv dss (on), drain-to-source breakdown r ds (on), drain-to-source on resistance (normalized) voltage (normalized) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +125c t j = +25c t j = -55c v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] i d = 0.5 i d [cont.] v gs = 10v c rss c oss c iss operation here limited by r ds (on) t c =+25c t j =+150c single pulse 050-5896 rev a 5-2002 typical preformance curves v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage 0 2 4 6 8 10 0 20 40 60 80 100 120 25 50 75 100 125 150 -50 0 50 100 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 1 5 10 50 100 500 .01 .1 1 10 50 1.30 1.20 1.10 1.00 0.90 0.80 0.70 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 30,000 10,000 5,000 1,000 500 100 100s 1ms 10ms 100ms dc 80 60 40 20 0 60 50 40 30 20 10 0 2.5 2.0 1.5 1.0 0.5 0.0 232 100 50 10 5 1
apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 apl502 050-5896 rev a 5-2002 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline
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