specifications and information are subject to chang e without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 april 2010 wja1000 +5v active-bias ingap hbt gain block product features ? cascadable gain block ? 50 ? 1200 mhz ? 18.5 db gain ? +19 dbm p1db ? +35 dbm oip3 @ 900mhz ? operates from +5v @ 85ma ? robust 1000v esd, class 1c ? rohs-compliant sot-89 package applications ? wireless infrastructure ? general purpose ? catv / ftth ? vhf / vhf transmission product description the wja1000 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. at 900 mhz, the wja1000 typically provides 18.5 db gain, +35 dbm oip3, and +19 dbm p1db. the device is housed in a rohs-compliant sot-89 industry-standard smt package using a nipdau plating to eliminate the possibility of tin whiskering. the wja1000 consists of darlington pair amplifiers using a high reliability ingap/gaas hbt process technology. the mmic amplifier is internally matched to 50 ? and only requires dc-blocking capacitors and a bias inductor for operation. an internal active bias is designed to enable stable performance over temperature. a dropping bias resistor is not required allowing the device to be biased directly from a +5v supply voltage. the broadband amplifier can be directly applied to various current and next generation wireless technologies s uch as gsm, pcs, and w-cdma. the wja1000 is ideal for gene ral purpose applications such as lo buffering, if ampli fication and pre-driver stages within the 50 to 1200 mhz fre quency range. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 1200 test frequency mhz 900 gain db 16.7 18.3 19.7 input return loss db 14 output return loss db 12 output p1db dbm +18.7 output ip3 (2) dbm +32 +34.6 output ip2 dbm +44.7 noise figure db 5.3 device voltage v 5.0 device current ma 70 85 90 1. test conditions: 25 oc, supply voltage = +5v, 5 0 system. s-parameters and 3oip measured at device pins. all other specifications measured on e valuation board. 2. 3oip measured with two tones at an output power of +9dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to +150 c supply voltage +6.5 v input power +24 dbm jc (junction to paddle) 80.6 c / w maximum junction temperature 150 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 200 500 900 s21 db 19.5 18.9 17.8 s11 db -19 -17 -14 s22 db -18 -15 -10 output p1db dbm +20.1 +19.6 +18.7 output ip3 (2) dbm +39.2 +39.3 +33.9 output ip2 dbm +50 +55.6 +44.7 noise figure db 4.7 4.9 5.3 3. listed typical performance parameters measured on e valuation board. ordering information part no. description wja1000 +5v active bias ingap hbt gain block (lead-free/green/rohs-compliant sot-89 package) WJA1000-PCB 50 ? 1200 mhz fully assembled eval. board standard tape / reel size = 1000 pieces on a 7 reel end of life notice last time buy date: oct. 1, 2010 recommended replacement part: tqp3m9008
specifications and information are subject to chang e without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 april 2010 wja1000 +5v active-bias ingap hbt gain block typical evaluation board rf performance supply bias = +5 v, i cc = 85 ma gain vs. frequency 10 12 14 16 18 20 0 500 1000 1500 2000 frequency (mhz) gain (db) -40c +25c +85c return loss t=25c -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 frequency (mhz) s11, s22 (db) s11 s22 noise figure vs. frequency 2 3 4 5 6 7 8 9 10 0 500 1000 1500 2000 frequency(mhz) nf(db) -40c +25c +85c oip3 vs. output power freq = 900mhz 26 28 30 32 34 36 38 40 0 2 4 6 8 10 output power per tone (dbm) oip3 (dbm) oip3 vs. frequency pout = 9dbm/tone, t = 25c 26 28 30 32 34 36 38 40 0 500 1000 1500 2000 frequency (mhz) oip3 (dbm) oip3 vs. vcc freq = 900mhz 26 28 30 32 34 36 38 40 4.7 4.8 4.9 5 5.1 5.2 vcc (v) oip3 (dbm) oip2 vs. frequency pout = 9dbm/tone, t = 25c 30 35 40 45 50 55 60 0 500 1000 1500 2000 frequency (mhz) oip2 (dbm) p1db vs. frequency 12 14 16 18 20 22 0 500 1000 1500 2000 frequency(mhz) p1db(dbm) -40c +25c +85c p1db vs. vcc freq = 900mhz 12 14 16 18 20 22 4.7 4.8 4.9 5 5.1 5.2 vcc (v) p1db (dbm) icc vs. temperature vcc = +5v 75 80 85 90 95 -50 -25 0 25 50 75 100 temperature (c) icc (ma) icc vs. vcc 20 40 60 80 100 120 140 160 4.0 4.5 5.0 5.5 6.0 vcc (v) icc (ma) -40c +25c +85c
specifications and information are subject to chang e without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 april 2010 wja1000 +5v active-bias ingap hbt gain block application circuit recommended component values (1) ref. name value / type size l1 470 nh ferrite core wire wound inductor (2) 0805 c1, c2 1000 pf npo chip capacitor 0603 c3 0.018 f chip capacitor 0603 r1, r2, r4 0 (3) 0603 c4, c5, c6, r3, r5, r6, r7, r8 do not place (3) 1. the listed values are contained on the evaluation b oard to achieve optimal broadband performance 2. for lower cost and performance (500 ? 2000 mhz) opt ion use 39 nh air core wire wound inductor. 3. place holders for the 0 resistors and ?do not place? references are not ne eded for final design. typical device data s-parameters (v device = +5 v, i cc = 85 ma, t = 25 c, calibrated to device leads) freq s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 10 -13.71 -46.06 21.64 170.65 -25.22 14.30 -8.97 -2 6.96 50 -20.43 -115.20 19.92 169.93 -23.05 4.71 -16.29 - 45.68 100 -21.73 -135.74 19.71 168.53 -22.91 0.65 -18.49 -45.01 150 -21.91 -139.31 19.66 165.15 -22.84 -0.98 -18.90 -47.09 200 -21.42 -141.41 19.53 161.24 -22.78 -2.82 -18.73 -52.11 250 -20.98 -141.71 19.49 157.65 -22.82 -4.14 -18.56 -57.97 300 -20.09 -140.70 19.44 153.78 -22.81 -5.81 -17.96 -63.14 350 -19.40 -139.38 19.44 149.38 -22.87 -6.72 -17.46 -68.31 400 -18.82 -138.58 19.37 145.64 -22.81 -7.83 -17.08 -71.77 450 -18.00 -136.56 19.32 141.61 -22.82 -8.76 -16.42 -77.67 500 -17.56 -138.54 19.20 137.52 -22.79 -10.39 -16.1 9 -81.79 550 -17.00 -139.35 19.15 133.71 -22.85 -11.71 -15.7 3 -86.77 560 -16.84 -138.53 19.10 133.13 -22.76 -11.97 -15.6 8 -86.93 600 -16.40 -140.07 19.06 129.74 -22.83 -13.31 -15.4 9 -90.57 650 -15.94 -138.91 18.93 126.08 -22.79 -14.16 -14.9 3 -94.83 700 -15.58 -139.29 18.87 121.54 -22.83 -14.99 -14.3 7 -99.41 750 -15.16 -139.81 18.73 118.38 -22.76 -17.20 -14.0 2 -103.07 800 -14.94 -141.04 18.63 113.88 -22.81 -18.18 -13.6 6 -106.53 850 -14.61 -141.31 18.54 109.98 -22.82 -19.14 -13.1 5 -110.34 900 -14.44 -141.12 18.39 106.41 -22.78 -20.05 -12.6 5 -113.92 950 -14.24 -141.85 18.31 102.50 -22.79 -21.59 -12.1 4 -117.37 1000 -14.32 -143.36 18.21 98.85 -22.87 -23.02 -11.8 6 -121.46 1050 -14.13 -144.02 18.02 94.82 -22.82 -23.86 -11.4 5 -124.29 1100 -13.96 -144.92 17.88 91.29 -22.85 -25.93 -11.0 6 -127.46 1150 -13.82 -145.64 17.77 87.33 -22.81 -26.81 -10.7 0 -130.13 1200 -13.79 -146.29 17.63 83.21 -22.97 -28.21 -10.4 2 -133.58 device s-parameters are available for download from the website at: http://www.wj.com c1 blocking capacitor rf out l1 rf choke c3 bypass capacitor r4 0 rf in c2 blocking capacitor vcc =+5.00v icc = 85 ma wja1000 r1 0 r2 0
specifications and information are subject to chang e without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 april 2010 wja1000 +5v active-bias ingap hbt gain block mechanical information this package is lead-free/green/rohs-compliant. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating m aterial on the leads is nipdau. outline drawing land pattern product marking the wja1000 will be marked with an ?a1000? designator with a lot code marked below the part designator. the ?y? represents the last digit of the year the part was manufactured, the ?xxx? is an auto-generated number, and ?z? refers to a wafer number in a lot batch. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135?) diameter drill and have a final plat ed thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance . 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / ther mal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. a1000 yxxx - z
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