? ? thyristor module maximum ratings approx net weight:155g grade parameter parameter parameter parameter symbol PCH10012 pch10016 unit repetitive peak off-state voltage v drm 1200 1600 non repetitive peak off-state voltage v dsm 1300 1700 v repetitive peak reverse voltage v rrm 1200 1600 non repetitive peak reverse voltage v rsm 1300 1700 v parameter parameter parameter parameter conditions conditions conditions conditions max rated max rated max rated max rated value value value value unit average rectified output current i o(av) 50hz half sine wave condition tc=77 c 100 a rms on-state current i t(rms) 156 a surge on-state current i tsm 50 hz half sine wave,1pulse non-repetitive 2000 a i squared t i 2 t 2msec to 10msec 20000 a 2 s critical rate of turned-on current di/dt v d =2/3v drm , i tm =2 ? i o , tj=125 c i g =200ma, di g /dt=0.2a/ s 100 a/ s peak gate power p gm 5 w average gate power p g(av) 1 w peak gate current i gm 2 a peak gate voltage v gm 10 v peak gate reverse voltage v rgm 5 v operating junctiontemperature range tjw -40 to +125 c storage temperature range tstg -40 to +125 c isoration voltage viso base plate to terminals, ac1min 2500 v case mounting m6 screw 2.4 to 3.5 mounting torque terminals ftor m5 screw 2.4 to 2.8 n ? m value per 1 arm features * isolated base * thyristor and diode cathode common * high surge capability * ul recognized, file no. e187184 typical applications * rectified for general use PCH10012 pch1001 6 PCH10012 pch1001 6 PCH10012 pch1001 6 PCH10012 pch1001 6 outline drawing 100a / 1200 to 1600v ?
? ? electrical ? thermal characteristics maximum value. characteristics symbol test conditions min. typ. max. unit peak off-state current i dm v dm = v drm, tj= 125 c 20 ma peak reverse current i rm v rm = v rrm, tj= 125 c 20 ma peak forward voltage v tm i tm = 300a, tj=25 c 1.38 v tj=-40 c 200 tj=25 c 100 gate current to trigger i gt v d =6v,i t =1a tj=125 c 50 ma tj=-40 c 4 tj=25 c 2.5 gate voltage to trigger v gt v d =6v,i t =1a tj=125 c 2 v gate non-trigger voltage v gd v d =2/3v drm tj=125 c 0.25 v critical rate of rise of off-state voltage dv/dt v d =2/3v drm tj=125 c 500 v/ s turn-off time tq i tm =i o ,v d =2/3v drm dv/dt=20v/ s, v r =100v -di/dt=20a/ s, tj=125 c 100 s turn-on time tgt 6 s delay time td 2 s rise time tr v d =2/3v drm tj=125 c i g =200ma, di g /dt=0.2a/ s 4 s latching current i l tj=25 c 100 ma holding current i h tj=25 c 50 rth(j-c) junction to case 0.35 thermal resistance rth(c-f) base plate to heat sink with thermal compound 0.2 c/w value per 1arm
? ? pch1001x outline drawing (dimensions in mm) ?
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