the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sJ598 switching p-channel power mos fet data sheet document no. d14656ej4v0ds00 (4th edition) date published august 2004 ns cp(k) printed in japan 2000, 2001 the mark shows ma j or revised p oints. description the 2sJ598 is p-channel mos field effect transistor designed for solenoid, motor and lamp driver. features ? low on-state resistance: r ds(on)1 = 130 m ? max. (v gs = ?10 v, i d = ?6 a) r ds(on)2 = 190 m ? max. (v gs = ?4.0 v, i d = ?6 a) ? low c iss : c iss = 720 pf typ. ? built-in gate protection diode ? to-251/to-252 package absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss ?60 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25c) i d(dc) m 12 a drain current (pulse) note1 i d(pulse) m 30 a total power dissipation (t c = 25c) p t 23 w total power dissipation (t a = 25c) p t 1.0 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c single avalanche current note2 i as ?12 a single avalanche energy note2 e as 14.4 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = ?30 v, r g = 25 ? , v gs = ?20 0 v ordering information part number package 2sJ598 to-251 (mp-3) 2sJ598-z to-252 (mp-3z) (to-251) (to-252)
data sheet d14656ej4v0ds 2 2sJ598 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ?60 v, v gs = 0 v ?10 a gate leakage current i gss v gs = m 16 v, v ds = 0 v m 10 a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1 ma ?1.5 ?2.0 ?2.5 v forward transfer admittance | y fs | v ds = ?10 v, i d = ?6 a 5 11 s drain to source on-state resistance r ds(on)1 v gs = ?10 v, i d = ?6 a 102 130 m ? r ds(on)2 v gs = ?4.0 v, i d = ?6 a 131 190 m ? input capacitance c iss v ds = ?10 v 720 pf output capacitance c oss v gs = 0 v 150 pf reverse transfer capacitance c rss f = 1 mhz 50 pf turn-on delay time t d(on) i d = ?6 a 7 ns rise time t r v gs = ?10 v 4 ns turn-off delay time t d(off) v dd = ?30 v 35 ns fall time t f r g = 0 ? 10 ns total gate charge q g i d = ?12 a 15 nc gate to source charge q gs v dd = ?48 v 3 nc gate to drain charge q gd v gs = ?10 v 4 nc body diode forward voltage v f(s-d) i f = 12 a, v gs = 0 v 0.98 v reverse recovery time t rr i f = 12 a, v gs = 0 v 50 ns reverse recovery charge q rr di/dt = 100 a / s 100 nc test circuit 1 avalanche capability r g = 25 ? 50 ? l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 ? d.u.t. r l v dd i g = ? 2 ma ?
data sheet d14656ej4v0ds 3 2sJ598 typical characteristics (t a = 25c) t c - case temperature - ?c p t - total power dissipation - w 0 80 20 40 60 100 140 120 160 total power dissipation vs. case temperature 30 25 20 15 10 5 0 forward bias safe operating area i d - drain current - a v ds - drain to source voltage - v ?1 ?10 ?100 ?0.1 ?1 ?10 t c = 25?c single pulse ?0.1 ?100 power dissipation limited r ds(on) limited i d(dc) i d(pulse) pw = 10 s 100 s 1 ms 10 ms dc derating factor of forward bias safe operating area t c - case temperature - ?c dt - percentage of rated power - % 040 20 60 100 140 80 120 160 100 80 60 40 20 0 pw - pulse width - s transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 5.43 ?c /w r th(ch-a) = 125 ?c /w
data sheet d14656ej4v0ds 4 2sJ598 drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 ? ?0 ?5 ?0 pulsed 200 150 100 50 0 i d = ? a forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed ? ? ? ? ? v ds = ?0 v ?0 ? ?.1 ?00 t a = ? 55 ?c 25 ?c 75 ?c 150 ?c ?.01 drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? ? ?.1 300 200 100 0 ?0 ?00 pulsed v gs = ?.0 v ?.5 v ?0 v drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 ? ? ? ?0 ?0 ?0 ?0 ?0 0 ? pulsed v gs = ?0 v ?0 ?.0 v forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s ?.01 ?.1 ? 10 100 ?0 ?00 0.1 1 pulsed v ds = ?0 v t a = 150 ?c 75 ?c 25 ?c ? 50 ?c 0.01 gate cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate cut-off voltage - v v ds = ?0 v i d = ? ma ?.0 ?.0 ?.0 ?0 0 50 100 0 150 ?.0
data sheet d14656ej4v0ds 5 2sJ598 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - m ? ? 50 0 50 100 150 i d = ? a 300 250 200 150 100 50 0 ?0 v v gs = ?.0 v pulsed source to drain diode forward voltage ?.0 i sd - diode forward current - a 0 ?.5 v sd - source to drain voltage - v ?.5 pulsed ?.01 ?.1 ? ?0 ?00 0 v v gs = ?0 v dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 46 2 8 10 12 14 16 ?0 ?0 ?0 ?0 ?0 ?0 0 v ds v gs v dd = ?8 v ?0 v ?2 v i d = ?2 a ?2 ?0 ? ? ? ? 0 reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1 10 100 1000 100 capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 ?.1 ? ?0 v gs = 0 v f = 1 mhz c oss c rss c iss ?00 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 ? ?.1 100 1000 ?0 ?00 t f t r t d(on) t d(off) v dd = ?0 v r g = 0 ? v gs = ?0 v
data sheet d14656ej4v0ds 6 2sJ598 single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 25 50 75 100 160 140 120 100 80 60 40 20 0 125 150 v dd = ?0 v r g = 25 ? v gs = ?0 0 v i as ?2 a single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a ? ?0 ?00 1 m10 m v dd = ?0 v r g = 25 ? v gs = ?0 0 v i as = ?2 a 10 100 ?.1 e as = 14.4 mj
data sheet d14656ej4v0ds 7 2sJ598 package drawings (unit: mm) 1) to-251 (mp-3) 2) to-252 (mp-3z) 1. gate 2. drain 3. source 4. fin (drain) 2 13 6.5 ?.2 5.0 ?.2 4 1.5 ? 0.1 +0.2 5.5 ?.2 7.0 min. 13.7 min. 2.3 2.3 0.75 0.5 ?.1 2.3 ?.2 1.6 ?.2 1.1 ?.2 0.5 ? 0.1 +0.2 0.5 ? 0.1 +0.2 1. gate 2. drain 3. source 4. fin (drain) 123 4 6.5 ?.2 5.0 ?.2 4.3 max. 0.8 2.3 2.3 0.9 max. 5.5 ?.2 10.0 max. 2.0 min. 1.5 ? 0.1 +0.2 2.3 ?.2 0.5 ?.1 0.8 max. 0.8 1.0 min. 1.8typ. 0.7 1.1 ?.2 equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of t he transistor serves as a protector against esd. when this device actually used, an addi tional protection circuit is exter nally required if a voltage exceeding the rated voltage may be applied to this device.
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