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www.irf.com 1 03/18/11 irlhs2242pbf hexfet power mosfet notes through are on page 9 applications charge and discharge switch for battery application system/load switch features and benefits note form quantity irlhs2242trpbf pqfn 2mm x 2mm tape and reel 4000 IRLHS2242TR2PBF pqfn 2mm x 2mm tape and reel 400 orderable part number package type standard pack absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 100c continuous drain current, v gs @ 4.5v i d @ t c = 25c continuous drain current, v gs @ 4.5v (wirebond limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 9.6 max. -7.2 -9.8 -34 12 -20 -5.8 -15 -8.5 v w a c features benefits low thermal resistance to pcb ( 13 1.0 ? 1 v ds -20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 31 m r ds(on) max (@v gs = 2.5v) 53 m q g typ 9.6 nc i d (@t c(bottom) = 25c) -8.5 a g 3 s d2 d1 4s 5d 6d top view d

2 www.irf.com g d s thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 13 r jc (top) junction-to-case ??? 90 c/w r ja junction-to-ambient ??? 60 r ja (<10s) junction-to-ambient ??? 42 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -20 ??? ??? v ? . 0.01 31 3 3 0. 0. 1.1 3. 1.0 10 100 100 10 1 . 10 1. 3. .3 . . 1 t d(on) turn-on delay time ??? 7.9 ??? t r rise time ??? 54 ??? t d(off) turn-off delay time ??? 54 ??? t f fall time ??? 66 ??? c iss input capacitance ??? 877 ??? c oss output capacitance ??? 273 ??? c rss reverse transfer capacitance ??? 182 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 27 41 ns q rr reverse recovery charge ??? 20 30 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = -10 a v gs = -2.5v, i d = -6.8a typ. m v dd = -10v, v gs = -4.5v v gs =-10v, v ds = -10v, i d = -8.5a v ds = 16v, v gs = 0v ??? r g = 2.0 10 . 1 0 1 a i d = -8.5a id = -8.5a v gs = 0v v ds = -10v v ds = -16v, v gs = 0v t j = 25c, i f = -8.5a, v dd = -10v di/dt = 200a/ s t j = 25c, i s = -8.5a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 18 -8.5 ? = 1.0khz conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -8.5a ??? ??? -34 ??? ??? -8.5 mosfet symbol na ns a pf nc v gs = -4.5v ??? v gs = -12v v gs = 12v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -8.5a v gs = -4.5v 0 5 10 15 20 25 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -16v v ds = -10v vds= -4v i d = -8.5a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -7.0v -4.5v -3.5v -2.5v -2.0v -1.8v bottom -1.5v 60 s pulse width tj = 25c -1.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c -1.5v vgs top -10v -7.0v -4.5v -3.5v -2.5v -2.0v -1.8v bottom -1.5v 0 1 2 3 4 5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v 60 s pulse width

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 - i d , d r a i n c u r r e n t ( a ) limited by wirebond 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.3 0.6 0.9 1.2 1.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10ua id = -250ua id = -1.0ma id = -10ma 0.2 0.6 1.0 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.10 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wirebond

www.irf.com 5 fig 12. on-resistance vs. gate voltage 0 2 4 6 8 10 12 -v gs, gate -to -source voltage (v) 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -8.5a t j = 25c t j = 125c fig 13. maximum avalanche energy vs. drain current fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v fig 15b. switching time waveforms fig 15a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f

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0.1 % + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -2.2a -4.3a bottom -8.5a

6 www.irf.com fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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+ - + + + - - - fig 16. for p-channel hexfet power mosfets 1k vcc dut 0 l s 20k s

www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn package details pqfn part marking

8 www.irf.com pqfn 2x2 outline tape and reel core tape cover tape (width) 5.4 mm tolerance +/- 0.1 mm 9.5 mm +/- 0.1 mm width remark: - dimension above are typical dimensions. - cover tape thickness is 0.048mm +/- 0.005mm. - surface resistivity 10e5 < rs <10e9. table 2:

www.irf.com 9 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2011 data and specifications subject to change without notice. ms l1 (per ipc/jedec j-std-020d ?? ? ) rohs compliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level consumer ?? (per jedec jesd47f ??? guidel ines )
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.49mh, r g = 50 , i as = -8.5a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to -8.5a by die-source to lead-frame bonding technology

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