STN1N20 n - channel 200v - 1.2 w - 1a - sot-223 power mos transistor preliminary data n typical r ds(on) = 1.2 w n avalanche rugged technology n sot-223 can be wave or reflow soldered n available in tape and reel on request n 150 o c operating temperature n application oriented characterization applications n hard disk drivers n small motor current sense circuits n dc-dc converters and power supplies ? internal schematic diagram september 1999 1 2 2 3 sot-223 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain- gate voltage (r gs =20k w ) 200 v v gs gate-source voltage 20 v i d (*) drain current (continuous) at t c =25 o c1a i d (*) drain current (continuous) at t c =100 o c 0.6 a i dm ( ? ) drain current (pulsed) 4 a p tot total dissipation at t c =25 o c 2.9 w derating factor 0.023 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area (*) limite d by package type v dss r ds(on) i d cont STN1N20 200 v < 1.5 w 1a 1/6
thermal data r thj-pcb r thj-amb t l thermal resistance junction-pc board max thermal resistance junction-ambient max (surface mounted) maximum lead temperature for soldering purpose 43 60 260 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 10 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs = 0 200 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c = 125 o c 10 100 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs =10v i d = 0.5 a 1.2 1.5 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 1a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =0.5a 0.3 0.7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 v 290 50 10 400 70 15 pf pf pf STN1N20 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =100v i d =2a r g =4.7 w v gs =10v 7 6 10 10 ns ns (di/dt) on turn-on current slope v dd =160v i d =4a r g =47 w v gs =10v 270 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v i d =4a v gs =10v 13 7 4 20 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =160v i d =4a r g =4.7 w v gs =10v 6 5 13 10 10 20 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 1 4 a a v sd ( * )forwardonvoltage i sd =1a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a di/dt = 100 a/ m s v dd =30v t j = 150 o c 170 1 12 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area STN1N20 3/6
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STN1N20 4/6
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c be l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data STN1N20 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STN1N20 6/6
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