application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings 1 2, 4 3 dpak-1 4 1 2 3 4 1 2 3 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss ?0 v drain current i d 5a drain peak current i d(pulse) *20 a body?rain diode reverse drain current i dr 5a avalanche current i ap *** 5 a avalanche energy e ar *** 2.1 mj channel dissipation pch** 20 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2sk1949 l , 2sk1949 s silicon n channel mos fet
2sk1949 l , 2sk1949 s table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 60 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 100 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.12 0.15 ? i d = 3 a resistance v gs = 10 v * 0.15 0.2 ? i d = 3 a v gs = 4 v * forward transfer admittance |y fs | 3 5.5 s i d = 3 a v ds = 10 v * input capacitance ciss 390 pf v ds = 10 v output capacitance coss 190 pf v gs = 0 reverse transfer capacitance crss 45 pf f = 1 mhz turn?n delay time t d(on) 10 ns i d = 3 a rise time t r 42 ns v gs = 10 v turn?ff delay time t d(off) 90 ns r l = 10 ? fall time t f ?5 ns body?rain diode forward v df 1.0 v i f = 5 a, v gs = 0 voltage body?rain diode reverse t rr 60 ns i f = 5 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test
2sk1949 l , 2sk1949 s 10 8 6 4 2 0 0.4 0.8 1.2 1.6 2.0 drain to source voltage v (v) ds pulse test reverse drain current i (a) dr v = 0, ? v gs 10 v 5 v reverse drain current vs. souece to drain voltage 2.5 2 1.5 1 0.5 channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating 25 50 75 100 125 150 0 i = 5 a v = 25 v duty < 0.1 % rg > 50 ap dd ? d. u. t rg i monitor ap v monitor ds v dd 50 ? vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform
1.0 0.8 0.6 0.4 0.2 0246810 gate to source voltage v (v) gs pulse test drain to source saturation voltage vs. gate to source voltage i = 1 a d 5 a 2 a v (v) ds(on) drain to source sasuration voltage drain current i (a) d drain to source on state resistance r ( ) ? ds(on) 0.1 static drain to source state resistance vs. drain current 1 0.2 0.5 0.1 0.05 0.2 0.5 1 2 5 10 20 50 4 v v = 10 v gs pulse test 0.5 0.4 0.3 0.2 0.1 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance ? pulse test 10 v v = 4 v gs static drain to source on state resistance vs. temperature 1 a 2 a 1 a 2 a i = 5 a d 5 a 0.1 drain current i (a) d forward transfer admittance vs. drain current 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 tc = ?5 ? 25 ? 75 ? ds v = 10 v pulse test 2sk1949 l , 2sk1949 s
2sk1949 l , 2sk1949 s 5 10 500 200 100 50 20 reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time 0.1 0.2 0.5 1 2 5 10 di dt / = 50 a?, ta = 25 ? v = 0, pulse test gs 10 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 1000 200 500 100 20 50 10 20 30 40 50 ciss coss crss v = 0 f = 1 mhz gs 100 80 60 40 20 0 gate charge qg (nc) drain to source voltage v (v) ds 20 16 12 8 4 0 gate to source voltage v (v) gs dynamic input characteristics 4 8 12 16 20 v gs ds v v = 50 v 25 v 10 v dd v = 10 v 25 v 50 v dd i = 5 a d drain current i (a) d switching time t (ns) 0.1 switching characteristics 500 200 100 20 10 5 50 0.2 0.5 1 2 5 10 v = 10 v, v = 30 v pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t
2sk1949 l , 2sk1949 s 10 8 6 4 2 0 0.4 0.8 1.2 1.6 2.0 drain to source voltage v (v) ds pulse test reverse drain current i (a) dr v = 0, ? v gs 10 v 5 v reverse drain current vs. souece to drain voltage 2.5 2 1.5 1 0.5 channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating 25 50 75 100 125 150 0 i = 5 a v = 25 v duty < 0.1 % rg > 50 ap dd ? d. u. t rg i monitor ap v monitor ds v dd 50 ? vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform
2sk1949 l , 2sk1949 s 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveform
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