gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GFC064 n channel power mosfet with extremely low r ds(on) chip specification general description: * advanced process technology * dynamic dv/dt rating * 175 operating temperature * fast switching * fully avalanche rated *extremely low r ds(on) mechanical data: d30 dimension 6.53mm x 9.14mm thickness: 400 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 25mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 60 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 0.009 ? vgs=10v, id=59 continuous drain current ( in target package) id@25 98 a vgs=10v continuous drain current ( in target package) id@100 69 a vgs=10v operation junction tj -55~175 storage temperature t str -55~175 target device: irfp064 to-247ac p d 150 w @tc=25
|
