hiperdynfred tm epitaxial diode isoplus220 tm electrically isolated back surface features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low cathode to tab capacitance (<15pf) z planar passivated chips z very short recovery time z extremely low switching losses z low i rm -values z soft recovery behaviour z epoxy meets ul 94v-0 applications z antiparallel diode for high frequency switching devices z antisaturation diode z snubber diode z free wheeling diode in converters and motor control circuits z rectifiers in switch mode power supplies (smps) z inductive heating z uninterruptible power supplies (ups) z ultrasonic cleaners and welders advantages z avalanche voltage rated for reliable operation z soft reverse recovery for low emi/rfi z low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch i fav = 30 a v rrm = 600 v t rr = 30 ns v rrm c v rrm type v v 600 300 DSEE29-06CC symbol conditions maximum ratings i frms 60 a i favm c t c = 115c; rectangular, d = 0.5 30 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 200 a e as t vj = 25c; non-repetitive 1.2 mj i as = 3 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.3 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c t l 1.6 mm (0.063 in) from case for 10 s 260 c p tot t c = 25c 165 w v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force 11...65 / 2.5...15 n / lb weight typical 2 g symbol conditions characteristic values typ. max. i r d t vj = 25c v r = v rrm 100 a t vj = 150c v r = v rrm e 1ma v f e i f = 30 a; t vj = 125c 1.01 v t vj = 25c 1.26 v r thjc 0.9 k/w r thch 0.6 k/w t rr i f = 1 a; -di/dt = 200 a/s; 30 ns v r = 30 v i rm v r = 100 v; i f = 50 a; -di f /dt = 100 a/s 4.5 7 a t vj = 100c ds98815a(07/03) ? 2003 ixys all rights reserved DSEE29-06CC advance technical information 1 2 3 notes: data given for t vj = 25 o c and per diode unless otherwise specified c diodes connected in series d pulse test: pulse width = 5 ms, duty cycle < 2.0 % e pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. isoplus 220 isolated back surface* e153432 see dsep 29-03a data sheet for characteristic curves.
DSEE29-06CC ixys mosfets and igbts are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 isoplus220 outline note: 1. bottom heatsink (pin 4) is electrically isolated from pin 1, 2 or 3. 2. pin connections: 1 - cathode 2 - anode/cathode 3 - anode
|
