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| savantic semiconductor product specification silicon npn power transistors 2SC3658 description with to-3 package high voltage ,high speed built-in damper diode applications for color tv horizontal deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i cm collector current-peak 6 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -45~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3658 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a; i b =1.25a 2.0 v v besat base-emitter saturation voltage i c =5a; i b =1.25a 1.5 v i cbo collector cut-off current v cb =1200v; i e =0 0.5 ma i ebo emitter cut-off current v eb =6v; i c =0 500 ma h fe dc current gain i c =1a ; v ce =5v 8 v ecf diode forward voltage i f =6a 2.0 v t f fall time i c =5a ; i b1 =1a;i b2 =-2.5a;l b =0 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3658 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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