application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings 1 2, 4 3 ldpak 3 2 1 4 3 2 1 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?0 a drain peak current i d(pulse) * ?0 a body?rain diode reverse drain current i dr ?0 a avalanche current i ap *** ?0 a avalanche energy e ar *** 34 mj channel dissipation pch** 60 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? 2sj297 l , 2sj297 s silicon p-channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss ?0 v i d = ?0 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss ?50 ? v ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.25 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.05 0.065 ? i d = ?0 a resistance v gs = ?0 v * 0.07 0.095 ? i d = ?0 a v gs = ? v * forward transfer admittance |y fs | 1016 si d = ?0 a v ds = ?0 v * input capacitance ciss 2200 pf v ds = ?0 v output capacitance coss 1000 pf v gs = 0 reverse transfer capacitance crss 300 pf f = 1 mhz turn?n delay time t d(on) 25 ns i d = ?0 a rise time t r 130 ns v gs = ?0 v turn?ff delay time t d(off) 320 ns r l = 3 ? fall time t f 210 ns body?rain diode forward v df ?.1 v i f = ?0 a, v gs = 0 voltage body?rain diode reverse t rr 160 ns i f = ?0 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test see charactristics curves of 2sj291 2sj297 l , 2sj297 s
|
