mitsubishi nch power mosfet FS5KM-10A high-speed switching use sep. 2001 mitsubishi nch power mosfet FS5KM-10A high-speed switching use 500 30 5 15 5 30 ?5 ~ +150 ?5 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit FS5KM-10A outline drawing dimensions in mm application smps, ac-adapter, power supply of printer, copier, tv, vcr. etc. to-220fn 10v drive v dss ............................................................................... 500v r ds (on) (max) ................................................................ 1.5 ? i d ........................................................................................... 5a 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? ? ? ? ? gate ? drain ? source
mitsubishi nch power mosfet FS5KM-10A high-speed switching use sep. 2001 3.0 1.2 2.4 4.5 700 70 15 15 20 90 30 1.5 i d = 1ma, v gs = 0v i gs = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 500v, v gs = 0v i d = 1ma, v ds = 10v i d = 2a, v gs = 10v i d = 2a, v gs = 10v i d = 2a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 2a, v gs = 10v, r gen = r gs = 50 ? i s = 2a, v gs = 0v channel to case drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance 500 30 2.5 2.7 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 10 1.0 3.5 1.5 3.0 2.0 4.17 symbol unit parameter test conditions limits min. typ. max. performance curves 0 10 20 30 40 50 0 200 50 100 150 10 ? 7 10 0 5 7 2 3 10 1 5 7 2 3 2 3 10 1 357 2 10 2 357 7 235 2 5 2 3 0 1 2 3 4 5 0246810 t c = 25 c single pulse 100 s tw = 10 s 1ms dc 100 ms 10 ms p d = 30w v gs = 20v,10v,6v t c = 25 c pulse test 5v 4v 0 2 4 6 8 10 0 4 8 121620 v gs = 20v,10v,8v,6v p d = 30w t c = 25 c pulse test 4v 5v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical)
mitsubishi nch power mosfet FS5KM-10A high-speed switching use sep. 2001 0 2 4 6 8 10 048121620 0 4 8 12 16 20 048121620 0 0.8 1.6 2.4 3.2 4.0 10 1 2 10 0 357 2 10 1 357 2 10 2 357 10 1 10 1 10 0 23 57 23 57 10 1 5 7 10 2 2 3 5 7 2 3 5 10 0 357 10 1 3 2 257 10 2 3 23 2 57 10 1 3 5 7 10 2 2 2 3 5 7 10 3 2 3 5 7 10 1 10 1 10 0 23 57 23 57 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 v ds = 10v pulse test t c = 25 c pulse test t c = 25 c v ds = 10v pulse test tch = 25 c v gs = 10v v dd = 200v r gen = r gs = 50 ? t d(off) t d(on) t f t r ciss coss crss tch = 25 c v gs = 0v f = 1mhz t c = 25 c pulse test t c = 25 c,75 c,125 c v gs = 10v v gs = 20v i d = 8a 5a 3a on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state resistance r ds (on) ( ? )
mitsubishi nch power mosfet FS5KM-10A high-speed switching use sep. 2001 0.4 0.6 0.8 1.0 1.2 1.4 50 0 50 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 50 0 50 100 150 v ds = 10v i d = 1ma 0 2 4 6 8 10 0 0.8 1.6 2.4 3.2 4.0 10 1 10 0 2 3 5 7 10 1 2 3 5 7 50 0 50 100 150 v gs = 10v i d = 2a pulse test 0 4 8 12 16 20 0 8 16 24 32 40 10 2 10 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 3 10 2 10 1 v ds = 100v 400v 200v t c h = 25 c i d = 5a v gs = 0v pulse test t c = 25 c 75 c 125 c p dm tw d = t tw t d = 1.0 = 0.5 = 0.2 = 0.1 single pulse = 0.05 = 0.02 = 0.01 gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch c) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) source current i s (a)
|
