high performance isolated collector silicon bipolar transistor technical data features ? ideal for high gain, low current applications ? typical performance at 1.8 ghz associated gain of 18 db and noise figure of 1.2 db at 2 v and 2 ma p 1db of 5 dbm at 2 v and 5ma ? miniature 4-lead sc-70 (sot-343) plastic package ? transition frequency f t = 25 ghz applications ? lna, oscillator, driver amplifier, buffer amplifier, and down converter for cellular and pcs handsets and cordless telephones ? oscillator for tv delivery and tvro systems up to 12 ghz hbfp-0405 description agilents hbfp-0405 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead sc-70 (sot-343) surface mount plastic package. hbfp-0405 provides an associated gain of 18 db, noise figure of 1.2 db, and p 1db of 5 dbm at 1.8 ghz. because of high gain and low current characteristics, hbfp-0405 is ideal for cellular/ pcs as well as for c-band and ku-band applications. this product is based on a 25 ghz transition frequency fabrication process, which enables the products to be used for high performance, low noise applica- tions at 900 mhz, 1.9 ghz, 2.4 ghz, and beyond. surface mount plastic package/ sot-343 (sc-70) outline 4t pin configuration collector emitter base emitter 02x note: package marking provides orientation and identification. 02 = device code x = date code character. a new character is assigned for each month, year
2 hbfp-0405 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 15.0 v ceo collector-emitter voltage v 4.5 i c collector current ma 12 p t power dissipation [2] mw 54 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance: q jc = 550 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. p t limited by maximum ratings. electrical specifications, t c = 25 c symbol parameters and test conditions units min. typ. max. dc characteristics bv ceo collector-emitter breakdown voltage i c = 1 ma, open base v 4.5 i cbo collector-cutoff current v cb = 5 v, i e = 0 na 150 i ebo emitter-base cutoff current v eb = 1.5 v, i c = 0 m a15 h fe dc current gain v ce = 2 v, i c = 2 ma 50 80 150 rf characteristics f min minimum noise figure i c = 2 ma, v ce = 2 v, f = 1.8 ghz db 1.2 1.5 g a associated gain i c = 2 ma, v ce = 2 v, f = 1.8 ghz db 16.5 18 |s 21 | 2 insertion power gain i c = 5 ma, v ce = 2 v, f = 1.8 ghz db 17 p -1 db power output @ 1 db i c = 5 ma, v ce = 2 v, f = 1.8 ghz dbm 5 compression point
3 hbfp-0405 typical scattering parameters, v ce = 2 v, i c = 2 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.910 -4.2 16.5 6.665 176.2 -49.6 0.003 88.5 0.995 -2.2 0.5 0.889 -21.2 16.3 6.496 160.6 -35.6 0.017 80.5 0.982 -10.5 0.9 0.855 -37.6 15.7 6.101 146.0 -30.4 0.030 71.9 0.951 -18.8 1.0 0.841 -41.4 15.6 5.993 142.5 -29.5 0.033 69.6 0.937 -20.9 1.5 0.774 -60.9 14.8 5.484 125.9 -26.4 0.048 57.5 0.880 -30.8 1.8 0.730 -72.0 14.3 5.164 116.8 -25.1 0.055 50.6 0.843 -36.4 2.0 0.701 -79.4 13.9 4.964 110.9 -24.5 0.059 46.4 0.817 -39.8 2.5 0.634 -96.0 13.0 4.450 97.0 -23.4 0.068 37.0 0.758 -47.8 3.0 0.570 -112.3 12.0 3.996 84.7 -22.7 0.073 28.7 0.708 -54.9 3.5 0.521 -127.0 11.2 3.620 73.4 -22.3 0.077 21.7 0.669 -60.9 4.0 0.477 -141.2 10.4 3.320 62.9 -21.9 0.080 15.6 0.634 -66.4 4.5 0.443 -154.7 9.7 3.047 53.6 -21.8 0.082 10.7 0.613 -71.5 5.0 0.412 -168.7 9.0 2.829 44.2 -21.5 0.084 6.0 0.591 -76.4 5.5 0.386 177.1 8.5 2.646 34.9 -21.3 0.087 1.6 0.571 -80.8 6.0 0.372 162.2 7.9 2.493 25.6 -21.0 0.089 -2.1 0.550 -86.1 6.5 0.369 147.7 7.5 2.371 16.8 -20.7 0.093 -7.0 0.525 -90.5 7.0 0.366 130.7 7.1 2.258 8.1 -20.4 0.096 -10.7 0.496 -95.2 7.5 0.370 116.2 6.6 2.141 -1.3 -20.0 0.100 -14.7 0.471 -100.2 8.0 0.387 102.9 6.2 2.042 -9.8 -19.8 0.103 -19.2 0.444 -106.7 8.5 0.405 91.4 5.7 1.937 -18.3 -19.5 0.105 -23.6 0.425 -113.9 9.0 0.421 80.9 5.3 1.834 -26.6 -19.3 0.109 -27.9 0.411 -121.3 9.5 0.437 70.5 4.9 1.753 -35.2 -19.0 0.112 -32.4 0.398 -127.7 10.0 0.454 60.3 4.4 1.669 -43.7 -18.8 0.115 -37.0 0.385 -133.5 hbfp-0405 noise parameters: v ce = 2 v, i c = 2 ma freq. f min g opt r n g a ghz db mag ang w db 0.9 1.07 0.569 9.3 20.9 23.46 1.0 1.09 0.558 11.6 20.6 22.67 1.5 1.19 0.504 22.0 19.2 19.64 1.8 1.25 0.474 28.7 18.5 18.28 2.0 1.29 0.456 33.6 18.0 17.50 2.5 1.39 0.423 48.2 16.6 15.91 3.0 1.48 0.391 59.3 15.6 14.39 3.5 1.57 0.352 72.1 14.2 13.29 4.0 1.70 0.318 83.1 13.0 12.29 4.5 1.78 0.290 93.9 12.1 11.43 5.0 1.87 0.257 107.3 10.9 10.71 5.5 2.00 0.215 118.3 10.5 10.03 6.0 2.10 0.179 133.7 10.4 9.47 6.5 2.18 0.157 153.1 10.2 8.97 7.0 2.29 0.125 -179.2 11.0 8.50 7.5 2.35 0.116 -154.8 12.0 7.98 8.0 2.50 0.140 -123.4 13.7 7.63 8.5 2.65 0.163 -104.1 15.9 7.21 9.0 2.76 0.191 -89.2 18.6 6.81 9.5 2.93 0.226 -73.4 22.3 6.51 10.0 2.94 0.254 -61.4 26.3 6.16 s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
4 hbfp-0405 typical scattering parameters, v ce = 2 v, i c = 5 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.819 -6.2 22.0 12.630 174.5 -50.2 0.003 87.8 0.990 -2.8 0.5 0.775 -30.3 21.5 11.912 153.5 -36.2 0.016 77.1 0.959 -13.4 0.9 0.704 -52.4 20.6 10.664 134.9 -31.5 0.027 67.3 0.897 -23.3 1.0 0.681 -57.2 20.3 10.308 130.7 -30.8 0.029 64.9 0.875 -25.5 1.5 0.585 -81.5 18.8 8.689 111.9 -28.1 0.039 54.0 0.783 -35.2 1.8 0.531 -94.5 17.9 7.817 102.5 -27.2 0.044 49.0 0.733 -40.1 2.0 0.500 -102.7 17.3 7.306 96.7 -26.6 0.047 46.0 0.703 -43.0 2.5 0.440 -121.3 15.9 6.208 83.7 -25.6 0.053 39.9 0.641 -49.4 3.0 0.392 -138.9 14.6 5.362 72.4 -24.8 0.057 34.6 0.597 -55.0 3.5 0.360 -154.1 13.5 4.716 62.3 -24.2 0.061 30.4 0.566 -59.7 4.0 0.334 -168.9 12.5 4.214 52.9 -23.6 0.066 26.5 0.541 -64.2 4.5 0.315 177.0 11.6 3.814 44.3 -23.1 0.070 23.0 0.528 -68.6 5.0 0.302 162.5 10.9 3.491 35.7 -22.5 0.075 19.0 0.513 -73.0 5.5 0.295 148.1 10.2 3.229 27.4 -22.0 0.079 15.1 0.499 -77.0 6.0 0.301 133.7 9.6 3.010 19.0 -21.5 0.084 11.1 0.484 -82.0 6.5 0.311 120.4 9.0 2.827 10.8 -21.0 0.089 6.4 0.463 -86.1 7.0 0.327 105.9 8.5 2.668 2.6 -20.5 0.095 2.1 0.439 -90.5 7.5 0.346 94.0 8.0 2.520 -5.8 -20.0 0.101 -3.0 0.414 -95.4 8.0 0.369 83.4 7.6 2.389 -13.8 -19.5 0.106 -7.7 0.389 -101.6 8.5 0.392 74.1 7.1 2.261 -21.9 -19.1 0.110 -12.8 0.370 -108.5 9.0 0.410 65.6 6.6 2.141 -29.9 -18.7 0.116 -18.0 0.357 -115.8 9.5 0.428 56.9 6.2 2.038 -38.0 -18.4 0.120 -23.1 0.345 -122.3 10.0 0.446 48.2 5.7 1.937 -46.0 -18.1 0.124 -28.5 0.334 -127.9 hbfp-0405 noise parameters: v ce = 2 v, i c = 5 ma freq. f min g opt r n g a ghz db mag ang w db 0.9 1.36 0.386 2.8 17.0 25.59 1.0 1.38 0.375 5.0 16.8 24.76 1.5 1.46 0.333 17.7 16.2 21.56 1.8 1.52 0.305 25.5 15.6 20.12 2.0 1.55 0.292 31.9 15.3 19.29 2.5 1.65 0.246 50.0 13.8 17.61 3.0 1.73 0.208 59.9 13.1 16.04 3.5 1.79 0.187 73.6 12.6 14.81 4.0 1.93 0.153 85.6 12.0 13.76 4.5 1.99 0.123 100.2 11.8 12.90 5.0 2.08 0.104 119.5 11.3 12.12 5.5 2.18 0.065 141.5 12.0 11.45 6.0 2.32 0.051 -169.0 12.7 10.87 6.5 2.37 0.068 -129.9 13.5 10.32 7.0 2.48 0.101 -96.3 15.2 9.82 7.5 2.56 0.133 -82.9 17.0 9.33 8.0 2.69 0.177 -71.2 19.7 8.92 8.5 2.85 0.212 -62.8 22.8 8.50 9.0 2.99 0.246 -54.1 26.7 8.10 9.5 3.10 0.282 -46.1 30.9 7.77 10.0 3.12 0.314 -37.3 35.2 7.41 s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
5 hbfp-0405 typical performance 0 5 10 15 30 20 25 0 2 48 6 10 associated gain (db) frequency (ghz) figure 1. associated gain vs. frequency and collector current at 2 v. 5 0 10 20 15 30 25 02 4 810 622 associated gain (db) collector current (ma) figure 2. noise figure vs. frequency and collector current at v ce = 2 v. figure 3. associated gain vs. collector current and frequency at 2 v. figure 5. associated gain vs. voltage and frequency at 2 ma. figure 6. noise figure vs. voltage and frequency at 2 ma. figure 4. noise figure vs. collector current and frequency at 2 v. 2 ma 5 ma 10 ma 15 ma 12 14 18 20 16 0 0.50 1.00 3.50 3.00 1.50 2.00 02 4 6 8 1214 10 16 noise figure (db) collector current (ma) 2.50 01 2 4 5 36 voltage (v) voltage (v) 0 1 2 3 5 4 0 2 48 6 10 noise figure (db) frequency (ghz) 2 ma 5 ma 10 ma 15 ma 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 5 0 10 20 15 30 25 associated gain (db) 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz 01 2 4 5 36 0.50 0 1.00 2.00 1.50 2.50 noise figure (db) 0.9 ghz 1.8 ghz 2.5 ghz 3 ghz 4 ghz 5 ghz 6 ghz
6 hbfp-0405 die model and pspice parameters cmp9 r cmp7 r cmp8 r cmp69 r r=1 oh r=1.565 oh r=3.74196 oh r = 6.5915 oh temp= model=dbe region= area= area= region= model=bjtmodel area= region= model=dcs temp= area= region= model = dbc temp= c = 6.227e-3 pf c = 17.213e-3 pf xx cmp1 npnbjtsubst cmp5 c c cmp6 c cmp2 diode cmp16 diode cmp3 diode b e is=ie-24 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs= cjo=2.593e-14 tt= eg= vj=0.8971 m=2.292e-1 n=1.0029 fc=0.8 cmp11 diodemodelform # diode model # model = dbe is=i.40507e-17 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs= cjo=2.393e-14 tt= eg= vj=0.729 m=0.44 n=1 fc=0.8 cmp10 diodemodelform # diode model # model = dbc is=ie-24 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs=2.17347e2 cjo=8.974e-14 tt= eg= vj=0.6 m=0.42 n= fc=0.8 cmp12 diodemodelform # diode model # model = dcs npn=yes pnp= vtf=0.8 itf=2.21805486e-1 ptf=0 xtb=0.7 approxob=yes forward bf=1e6 ikf=1.4737e-1 ise=7.094e-20 ne=1.006 vaf=4.4e1 nf=1 tf=5.3706e-12 xtf=20 reverse br=1 ikr=1.1e-2 isc= nc=2 var=3.37 nr=1.005 tr=4e-9 noise ki= af= kb= ab= fb= diode and junction eg=1.17 is=4.4746e-18 imax= xti=3 tnom=21 substrate is5= ns= parasitics rb-9.30144818 irb=3.029562e-6 rbm=.1 re= rc= substrate is5= ns= cjc=2.7056e-14 vjc=.6775 mjc=0.3319 fc=0.8 cje=7.474248e-14 vje=0.9907 mje=0.5063 cjs= vjs= mjs= cmp68 bitmodelform # bjt model # model = bjtmodel xcjc=4.39790997e-1 this model can be used as a design tool. it has been tested on mds for various specifications. however, for more precise and accurate design, please refer to the measured data in this data sheet. note: the value of beta was high (bf = 1e6) to compensate for the fact that diode dbe reduces the current going into the base (current flows through dbe). the diodes are necessary to model the non-linear effects.
7 sot343 package model l = 0.2 nh l = 0.7 nh l = 0.2 nh l = 0.15 nh l = 0.22 nh llb l lt1 l lli l ll2 l c2t1 c c1t1 c cceb c c = 0.08 pf aground aground base collector emitter c = 0.05 pf c = 0.04 pf c = 0.04 pf l = 0.7 nh cmp44 l aground aground lle l l = 0.1 nh lt2 l c2t2 c c = 0.1 pf aground c1t2 c l = 0.5 nh l = 0.2 nh ll3 l lt3 l c1t3 c ccec c c2t3 c c = 0.1 pf c = 0.01 pf aground aground c = 0.144 pf c = 0.05 pf ccbc c
8 package dimensions sot-343 (sc-70 4 lead) part number ordering information part number devices per reel container tape orientation hbfp-0405-blk 100 antistatic bag none hbfp-0405-tr1 3000 7" reel standard hbfp-0405-tr2 10,000 13" reel standard HBFP-0405-TR3 3000 7" reel reverse e d a a1 b typ e e1 1.30 (0.051) bsc 1.15 (.045) bsc q h c typ l dimensions are in millimeters (inches) dimensions min. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 typ (0.018) 1.15 (0.045) 0.10 (0.004) 0 max. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) 10 symbol a a1 b c d e e h e1 l q 1.15 (.045) ref 1.30 (.051) ref 1.30 (.051) 2.60 (.102) 0.55 (.021) typ 0.85 (.033)
9 device orientation tape dimensions for outline 4t user feed direction cover tape carrier tape reel end view 8 mm 4 mm tr1, tr2 top view end view 8 mm 4 mm tr3 top view 02x 02x 02x 02x 02x 02x 02x 02x p p 0 p 2 f w c d 1 d e a 0 8 max. t 1 (carrier tape thickness) t t (cover tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 cover tape
www.semiconductor.agilent.com data subject to change. copyright ? 2000 agilent technologies, inc. obsoletes 5968-7939e 5988-0131en (9/00)
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