1 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 PM75B6L1C060 feature a) adopting new 5th generation full-gate cstbt tm chip b) error output signal is possible from all each protection upper and lower igbt c) the mounting surface is 90mm 50mm about 30% less than b6la type ? monolithic gate drive & protection logic ? detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage application photo voltaic power conditioner package outlines dimensions in mm 1. v upc 2. u fo 3. u p 4. v up1 5 . v vpc 6. v fo 7. v p 8. v vp1 9. nc 10. nc 11. nc 12 . nc 13. v nc 14. v n1 15. br 16. u n 17. v n 18. w n 19 . fo terminal code
2 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 internal functions block diagram maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter conditions ratings unit v ces collector-emitter voltage v d =15v, v cin =15v 600 v i c t c =25c 75 i crm collector current pulse 150 a p tot total power dissipation t c =25c 201 w i e emitter current t c =25c 75 i erm (free wheeling diode forward current) pulse 150 a t j junction temperature -20 ~ +150 c *: tc measurement point is just under the chip. converter part symbol parameter conditions ratings unit v ces collector-emitter voltage v d =15v, v cin =15v 600 v i c t c =25c 75 i crm collector current pulse 150 a p tot total power dissipation t c =25c 201 w i e emitter current t c =25c 75 i erm (free wheeling diode forward current) pulse 150 a i f di forward current t c =25c 75 a v r(dc) di rated dc reverse voltage t c =25c 600 v t j junction temperature -20 ~ +150 c *: tc measurement point is just under the chip. vcc fo in gnd gnd sc ot out vcc fo in gnd gnd sc ot out vcc fo in gnd gnd sc ot out vcc fo in gnd gnd sc ot out vcc fo in gnd gnd sc ot out vcc fo in gnd gnd sc ot out 1.5k br fo v nc w n v n1 v n u n nc nc nc nc v vpc v upc v p u p v vp1 v up1 v fo u fo 1.5k 1.5k p u v w n b
3 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 control part symbol parameter conditions ratings unit v d supply voltage applied between : v up1 -v upc , v vp1 -v vpc ,v n1 -v nc 20 v v cin input voltage applied between : u p -v upc , v p -v vpc , u n ? v n ? w n ?br -v nc 20 v v fo fault output supply voltage applied between : u fo -v upc , v fo -v vpc , fo-v nc 20 v i fo fault output current sink current at u fo , v fo , fo terminals 20 ma total system symbol parameter conditions ratings unit v cc(prot) supply voltage protected by sc v d =13.5v ~ 16.5v inverter part, t j =+125c start 450 v v cc(surge) supply voltage (surge) applied between : p-n, surge value 500 v t stg storage temperature -40 ~ +125 c v isol isolation voltage 60hz, sinusoidal, rms, charged part to base, ac 1min. 2500 v *: t c measurement point is just under the chip. thermal resistance limits symbol parameter conditions min. typ. max. unit r th(j-c)q inverter, igbt (per 1 element) (note.1) - - 0.62 r th(j-c)d inverter, fwdi (per 1 element) (note.1) - - 1.06 r th(j-c)q converter, igbt (per 1 element) (note.1) - - 0.62 r th(j-c)d converter, fwdi (per 1 element) (note.1) - - 1.06 r th(j-c)d thermal resistance converter, di (per 1 element) (note.1) - - 1.06 r th(c-s) contact thermal resistance case to heat sink, (per 1 module) thermal grease applied (note.1) - 0.06 - k/w note. 1 : if you use this value, r th(s-a) should be measured just under the chips.
4 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 electrical characteristics (tj = 25c, unless otherwise noted) inverter part limits symbol parameter conditions min. typ. max. unit t j =25c - 2.2 2.7 v cesat collector-emitter saturation voltage v d =15v, i c =75a v cin =0v, pulsed (fig. 1) t j =125c - 2.2 2.7 v v ec emitter-collector voltage i e =75a, v d =15v, v cin = 15v (fig. 2) - 2.4 3.3 v t on 0.1 0.5 1.2 t rr - 0.1 0.2 t c(on) - 0.15 0.3 t off - 1.1 2.0 t c(off) switching time v d =15v, v cin =0v 15v v cc =300v, i c =75a t j =125c inductive load (fig. 3,4) - 0.2 0.4 s t j =25c - - 1 i ces collector-emitter cut-off current v ce =v ces , v d =15v , v cin =15v (fig. 5) t j =125c - - 10 ma converter part limits symbol parameter conditions min. typ. max. unit t j =25c - 2.2 2.7 v cesat collector-emitter saturation voltage v d =15v, i c =75a v cin =0v, pulsed (fig. 1) t j =125c - 2.2 2.7 v v ec emitter-collector voltage i e =75a, v d =15v, v cin = 15v (fig. 2) - 2.4 3.3 v v fm di forward voltage i f =75a - 2.4 3.3 v t on 0.1 0.5 1.2 t rr - 0.1 0.2 t c(on) - 0.15 0.3 t off - 1.1 2.0 t c(off) switching time v d =15v, v cin =0v 15v v cc =300v, i c =75a t j =125c inductive load (fig. 3,4) - 0.2 0.4 s t j =25c - - 1 i ces collector-emitter cut-off current v ce =v ces , v d =15v , v cin =15v (fig. 5) t j =125c - - 10 ma control part limits symbol parameter conditions min. typ. max. unit v n1 -v nc - 6.5 12 i d circuit current v d =15v, v cin =15v v *p1 -v *pc - 1.6 4.0 ma v th(on) input on threshold voltage 1.2 1.5 1.8 v th(off) input off threshold voltage applied between : u p -v upc , v p -v vpc , u n ? v n ? w n ?br -v nc 1.7 2.0 2.3 v sc short circuit trip level -20 t j 125c, v d =15v (fig. 3, 6) 112 - - a t off(sc) short circuit current delay time v d =15v (fig. 3, 6) - 0.2 - s ot trip level 135 - - ot (hys) over temperature protection detect temperature of igbt chip hysteresis - 20 - c uv t trip level 11.5 12.0 12.5 uv r supply circuit under-voltage protection -20 tj 125c reset level - 12.5 - v i fo(h) - - 0.01 i fo(l) fault output current v d =15v, v fo =15v (note.2) - 10 15 ma t fo fault output pulse width v d =15v (note.2) 1.0 1.8 - ms note. 2 : fault output is given only when the internal sc, ot & uv protec tions schemes of either upper or lower arm device operate to p rotect it.
5 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 mechanical ratings and characteristics limits symbol parameter conditions min. typ. max. unit m t mounting torque mounting part screw : m4 1.4 1.65 1.9 n ? m m weight - - 135 - g recommended conditions for use symbol parameter conditions recommended value unit v cc supply voltage applied across p-n terminals 450 v v d control supply voltage applied between : v up1 -v upc , v vp1 -v vpc ,v n1 -v nc (note.3) 15.0 1.5 v v cin(on) input on voltage 0.8 v cin(off) input off voltage applied between : u p -v upc , v p -v vpc , u n ? v n ? w n ?br -v nc 9.0 v f pwm pwm input frequency using app lication circuit of fig. 8 20 khz t dead arm shoot-through blocking time for ipm?s each input signals (fig. 7) 2.0 s i o module operating current rms 30 a note.3: with ripple satisfying the following conditions: dv/dt swing 5v/ s, variation 2v peak to peak
6 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 precautions for testing 1. before applying any control supply voltage (v d ), the input terminals should be pulle d up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. after this, the specified on and off level setting for each input signal should be done. 2. when performing ?sc? tests, the turn-off surge voltage spike at the corresponding prot ection operation should not be allowed to rise above v ces rating of the device. (these test should not be done by using a curve tracer or its equivalent.) fig. 1 v cesat te s t fig. 2 v ec , v fm te s t fig. 3 switching time and sc test circuit fig. 4 switching time test waveform fig. 5 i ces te s t fig. 6 sc test waveform ic vcc gnd fo in u,v,(n) p,(u,v,w,b) v vd(all) fo vcin p,(u,v,w,b) v i e , i f fo vcin vcc gnd fo in vd(all) u,v,w,b,(n) u,v,w,b p vd(all) n ic vcc fo vcin vcc gnd fo in fo vcin vcc gnd fo in vd(all) u,v p vd(all) n ic vcc fo vcin vcc gnd fo in fo vcin vcc gnd fo in vd(all) v ce a pu lse fo vcin vcc gnd fo in vd(all) p,(u,v,w,b) u,v,w,b,(n)
7 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 fig. 7 dead time measurement point example fig. 8 application example circuit notes for stable and safe operation ; ? design the pcb pattern to minimize wiring length between opto- coupler and ipm?s input terminal , and also to minimize the stray capacity between the input and output wirings of opto-coupler. ? connect low impedance capacitor between the vcc and gnd terminal of each fast switching opto-coupler. ? fast switching opto-couplers: t plh , t phl 0.8 s, use high cmr type. ? slow switching opto-coupler: ctr > 100% ? use 3 isolated control power supplies (v d ). also, care should be taken to minimize the instantaneous voltage charge of the power supply. ? make inductance of dc bus line as small as possible, and minimize surge voltage using snubber capacitor between p and n terminal. vcc fo in gnd gnd out ot sc vcc fo in gnd gnd out ot sc vcc fo in gnd gnd out ot sc vcc fo in gnd gnd out ot sc vcc fo in gnd gnd out ot sc vcc fo in gnd gnd out ot sc fo br v nc v n1 v vpc v vp1 v upc v up1 u fo u p v fo v p u n v n w n p u v w n b a c output 1.5k 1.5k 1.5k nc nc nc nc vd1 vd2 vd3 20k 10 0.1 20k 10 0.1 20k 10 0.1 20k 10 0.1 20k 10 0.1 20k 10 0.1
8 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 performance curves output characteristics (typical) inverter part & converter part collector-emitter saturation voltage (vs. ic) characteristics (typical) inverter part & converter part collector current i c (a) 0 10 20 30 40 50 60 70 80 0.5 1.0 1.5 2.0 2.5 collector-emitter saturation voltage v cesat (v) 0.0 0.5 1.0 1.5 2.0 2.5 0 1020304050607080 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage (vs. v d ) characteristics (typical) inverter part & converter part free wheeling diode & diode forward characteristics (typical) inverter part & converter part collecto r-emitter saturation voltage v cesat (v) 1.0 1.5 2.0 2.5 12 13 14 15 16 17 18 emitter current i e (a) di forward current i f (a) 0 10 20 30 40 50 60 70 80 00.511.522.5 control voltage v d (v) emitter-collector voltage v ec (v) di forward voltage v fm (v) tj=25c vd=17v vd=15v vd=13v vd=15v tj=25c tj=125c ic=75a tj=25c t j =125c vd=15v tj=25c t j =125c
9 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 switching time (t on , t off ) characteristics (typical) inverter part & converter part switching time (t c(on) , t c(off) ) characteristics (typical) inverter part & converter part switching time t on , t off ( s) 0.1 1 10 1 10 100 switching time t c(on) , t c(off) ( s) 0.01 0.1 1 110100 collector current i c (a) collector current i c (a) switching energy characteristics (typical) inverter part switching energy characteristics (typical) converter part switching energy e on , e off (mj/pulse) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20406080 switching energy e on , e off (mj/pulse) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20406080 collector current i c (a) collector current i c (a) vcc=300v vd=15v tj=25c tj=125c inductive load toff ton vcc=300v vd=15v tj=25c tj=125c inductive load tc(off) tc(on) vcc=300v vd=15v tj=25c tj=125c inductive load eoff eon vcc=300v vd=15v tj=25c tj=125c inductive load eoff eon
10 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 free wheeling diode reverse recovery characteristics (typical) inverter part free wheeling diode reverse recovery characteristics (typical) converter part reverse recovery time t rr ( s) 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0 20406080 10 20 30 40 50 60 70 80 reverse recovery current i rr (a) reverse recovery time t rr ( s) 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0 20406080 10 15 20 25 30 35 40 45 reverse recovery time t rr ( s) emitter current i e (a) emitter current i e (a) free wheeling diode reverse recovery energy characteristics (typical) inverter part free wheeling diode reverse recovery energy characteristics (typical) converter part revese recovery energy e rr (mj/pulse) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20406080 revese recovery energy e rr (mj/pulse) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20406080 emitter current i e (a) emitter current i e (a) vcc=300v vd=15v tj=25c tj=125c inductive load vcc=300v vd=15v tj=25c tj=125c inductive load irr trr vcc=300v vd=15v tj=25c tj=125c inductive load irr trr vcc=300v vd=15v tj=25c tj=125c inductive load
11 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 i d vs. f c characteristics (typical) uv trip level vs. t j characteristics (typical) i d (ma) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 uv t / uv r (v) 0 2 4 6 8 10 12 14 16 18 20 -50 0 50 100 150 f c (khz) t j (c) sc trip level vs. t j characteristics (typical) inverter part & converter part sc (sc of t j =25c is normalized 1) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j (c) vd=15v tj=25c t j =125c n side p side uvt uvr vd=15v
12 mitsubishi PM75B6L1C060 flat-base type insulated package jan. 2011 transient thermal impedance characteristics inverter part transient thermal impedance characteristics converter part normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 time t (sec) time t (sec) single pulse igbt part; per unit base: rth(j-c)q=0.62 k/w fwdi part; per unit base: rth(j-c)d=1.06k/w single pulse igbt part; per unit base: rth(j-c)q=0.62 k/w fwdi part; per unit base: rth(j-c)d=1.06k/w di part per unit base: rth(j-c)d=1.06k/w
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