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  ? semiconductor components industries, llc, 2008 july, 2008 ? rev. 5 1 publication order number: MJF31C/d MJF31C (npn), mjf32c (pnp) preferred device complementary silicon plastic power transistors for isolated package applications designed for use in general purpose amplifier and switching applications. features ? collector ? emitter saturation voltage ? v ce(sat) = 1.2 vdc (max) @ i c = 3.0 adc ? collector ? emitter sustaining voltage ? v ceo(sus) = 100 vdc (min) ? high current gain ? bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? ul recognized, file #e69369, to 3500 v rms isolation ? pb ? free packages are available* ??????????????????? ??????????????????? maximum ratings ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? collector ? emitter voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ? base voltage ??? ??? ???? ???? ??? ??? ???????????? ???????????? ???????????? ? continuous ? peak ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ????????????  c derate above 25  c ??? ??? ??? ???? ???? ???? ??? ??? ???  c ???????????? ???????????? ????????????  c derate above 25  c ??? ??? ??? ???? ???? ???? ??? ??? ???  c ???????????? ???????????? ??? ??? ???? ???? ??? ??? ???????????? ???????????? ??? ??? ???? ???? ??? ???  c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r  jc 62.5 c/w thermal resistance, junction ? to ? case r  jc 4.46 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. i c = 1.8 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100  . *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com 3.0 ampere power transistors complementary silicon 100 volts, 28 watts preferred devices are recommended choices for future use and best overall value. x = 1 or 2 g = pb ? free package a = assembly location y = year ww = work week to ? 220 fullpak case 221d style 2 1 2 3 4 mjf3xcg ayww marking diagram device package shipping ordering information MJF31C to ? 220 fullpak 50 units/rail mjf32c to ? 220 fullpak 50 units/rail mjf32cg to ? 220 fullpak (pb ? free) 50 units/rail MJF31Cg to ? 220 fullpak (pb ? free) 50 units/rail
MJF31C (npn), mjf32c (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25  c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 2) (i c = 30 madc, i b = 0) ????? ????? ??? ??? ???? ???? ? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 0.3 ??? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 200 ??? ???  adc ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 1.0 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ? 50 ??? ??? ? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 3.0 adc, i b = 375 madc) ????? ????? ??? ??? ? ???? ???? 1.2 ??? ??? ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 3.0 adc, v ce = 4.0 vdc) ????? ????? ??? ??? ? ???? ???? 1.8 ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) ????? ????? ??? ??? ???? ???? ? ??? ??? mhz ?????????????????????? ?????????????????????? ? signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 khz) ????? ????? ??? ??? ???? ???? ? ??? ??? 2. pulse test: pulse width  300  s, duty cycle  2.0%. figure 1. power derating t, temperature ( c) 0 100 0 1.0 160 2.0 3.0 60 80 40 140 4.0 20 120 p d , power dissipation (watts) t c t a 0 10 20 30 40 t c t a turn-on pulse approx +11 v v in 0 v eb(off) t 1 approx +11 v v in t 2 turn-off pulse t 3 t 1 7.0 ns 100 < t 2 < 500  s t 3 < 15 ns duty cycle 2.0% approx -9.0 v r b and r c varied to obtain desired current levels scope r c r b v cc v in c jd << c eb -4.0 v figure 2. switching time equivalent circuit 0.03 figure 3. turn ? on time i c , collector current (amp) 0.02 0.1 3.0 0.07 1.0 1.0 i c /i b = 10 t j = 25 c t r @ v cc = 10 v t, time (s) 0.5 0.3 0.1 0.05 0.05 0.3 0.5 t d @ v eb(off) = 2.0 v 0.03 0.7 2.0 0.07 0.7 t r @ v cc = 30 v
MJF31C (npn), mjf32c (pnp) http://onsemi.com 3 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z  jc(t) = r(t) r  jc r  jc (t) = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z  jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 0.2 0.02 0.01 v ce , collector-emitter voltage (volts) 10 20 5.0 50 100 figure 5. active region safe operating area 0.2 0.1 0.5 secondary breakdown limited @ t j 150 c thermal limit @ t c = 25 c (single pulse) bonding wire limit 1.0ms 100  s 2.0 1.0 10 5.0 i c , collector current (amp) 5.0ms curves apply below rated v ceo MJF31C, mjf32c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150  c; t c is variable dependi ng on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk)  150  c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.7 0.03 0.3 0.5 0.07 i c , collector current (amp) figure 6. turn ? off time 3.0 t, time (s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 1.0 2.0 3.0 0.2 0.5 1.0 5.0 0.1 2.0 3.0 0.3 v r , reverse voltage (volts) figure 7. capacitance 300 capacitance (pf) 200 100 70 50 30 10 20 40 30 t f @ v cc = 30 v t f @ v cc = 10 v t s i b1 = i b2 i c /i b = 10 t s = t s - 1/8 t f t j = 25 c t j = +25 c c eb c cb
MJF31C (npn), mjf32c (pnp) http://onsemi.com 4 v ce , collector-emitter voltage (volts) i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region 300 500 0.05 0.07 0.3 3.0 0.03 100 70 50 30 10 7.0 0.1 v ce = 2.0 v 5.0 0.7 1.0 0.5 1.6 2.0 2.0 5.0 20 1000 1.0 0.8 0.4 10 0 100 200 500 50 25 c t j = 150 c -55 c 1.2 i c = 0.3 a t j = 25 c 1.0 a 3.0 a i c , collector current (amp) figure 10. ?on? voltages 1.4 0.003 i c , collector current (amps) 1.0 0.8 0.4 1.2 0.6 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 +2.5 v, voltage (volts) 0.2 0.3 0.5 1.0 2.0 3.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 *applies for i c /i b h fe /2 t j = -65 c to +150 c *  vc for v ce(sat)  vb for v be figure 11. temperature coefficients t j , junction temperature ( c) 10 3 -0.4 10 1 10 0 10 -2 10 2 10 -1 10 -3 10 7 10 5 10 4 10 2 10 6 10 3 v be , base-emitter voltage (volts) 20 60 80 100 120 160 140 40 , collector current (a) i c -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cut ? off region figure 13. effects of base ? emitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i ces r be , external base-emitter resistance (ohm v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12)
MJF31C (npn), mjf32c (pnp) http://onsemi.com 5 package dimensions to ? 220 fullpak case 221d ? 03 issue j style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MJF31C/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative


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