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rf & protection devices data sheet revision 1.0, 2010-10-22 BFP650 high linearity low noise si ge:c npn rf transistor
edition 2010-10-22 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP650 data sheet 3 revision 1.0, 2010-10-22 trademarks of infineon technologies ag bluemoon?, comneon?, c166 ?, crossave?, canpak?, cipos? , coolmos?, coolset?, corecontrol?, dave?, easypim?, econobridg e?, econodual?, eco nopack?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, isofac e?, i2rf?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, profet?, pro-sil?, primarion?, primepack?, rasi c?, reversave?, satric?, sens onor?, sieget ?, sindrion?, smarti?, smartlewis?, tempfet? , thinq!?, tricore?, trenchstop?, x-go ld?, xmm?, x-pmu?, xposys?. other trademarks advance design system? (ads) of agilent tech nologies, amba?, arm?, mu lti-ice?, primecell?, realview?, thumb? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus? , firstgps? of trimble navigation ltd. emv? of emvco, llc (visa holdings inc.). ep cos? of epcos ag. flexgo? of microsoft corporation. flexray? is licensed by flexra y consortium. hyperterminal? of hilgraeve incorpor ated. iec? of commission electrotechnique internationale. irda? of infrared data association corporation. iso? of international organization for standardizati on. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. mi crotec?, nucleus? of mentor graphi cs corporation. mifare? of nxp. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius sattelite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-03-22 BFP650, high linearity low noise sige:c npn rf transistor revision history: 2010-10-22, revision 1.0 previous revision: page subjects (changes since last revision) this datasheet replaces the revision from 16 feb 2009. the product itself has not been changed and the device characterist ics remain unchanged. only the product description and information available in the datasheet have been expanded and updated. the old datasheet revision remains fully valid for those customers who have got the revision from 16 feb 2009. 2 typical values for leakage currents included, description of hfe updated. 3 description of electrical parameters updated. 4, 5 spice gp model parameters removed from datasheet, updated model parameters shifted to the internet simulation data section. 6 pulse load curves removed. 7, 8 ac characteristic curves updated. BFP650 table of contents data sheet 4 revision 1.0, 2010-10-22 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 package information sot343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents BFP650 list of figures data sheet 5 revision 1.0, 2010-10-22 figure 1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 2 BFP650 testing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 3 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter . . . . . . . . . . . . . . . . . 15 figure 4 dc current gain h fe = f ( i c ), v ce = 3 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 5 collector current vs. base emitter voltage i c = f ( v be ), v ce = 2 v. . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 6 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 16 figure 7 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v . . . . . . . . . . . . . . . . . . . . 17 figure 8 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 9 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters. . . . . . . . . . . . . . . . . 18 figure 10 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 11 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 70 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 12 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . . 20 figure 13 maximum power gain g max = f ( v ce ), i c = 70ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 20 figure 14 input matching s 11 = f ( f ), v ce = 3 v, i c = 30 / 70 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 15 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 30 / 70 ma . . . . . . . . 21 figure 16 output matching s 22 = f ( f ), v ce = 3 v, i c = 30 / 70 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 17 noise figure nf min = f ( f ), v ce = 3 v, i c = 30 / 70 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 18 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 23 figure 19 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 23 figure 20 comparison noise figure nf 50 / nf min = f ( i c ), v ce = 3 v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . 24 figure 21 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 22 package foot print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 23 marking description (marking BFP650 : r5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 24 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of figures BFP650 list of tables data sheet 6 revision 1.0, 2010-10-22 table 1 maximum ratings at t a = 25c (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 4 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5 ac characteristics, v ce = 3 v, f = 150 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 6 ac characteristics, v ce = 3 v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 7 ac characteristics, v ce = 3 v, f =900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 8 ac characteristics, v ce = 3 v, f =1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 9 ac characteristics, v ce = 3 v, f =1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 10 ac characteristics, v ce = 3 v, f =2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 11 ac characteristics, v ce = 3 v, f =3.5ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 12 ac characteristics, v ce = 3 v, f =5.5ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 list of tables 1 2 3 4 product name package pin configuration marking BFP650 sot343 1 = b 2 = e 3 = c 4 = e r5s high linearity low noise si ge:c npn rf transistor BFP650 data sheet 7 revision 1.0, 2010-10-22 1 features ? highly linear low noise driver amplifier for all rf frontends up to 4.5 ghz ? output compression point op 1db = 17 dbm at 70 ma, 3v, 2.4 ghz, 50 ? system ? output 3rd order intermodulation point oip 3 = 30 dbm at 70 ma, 3 v, 2.4 ghz, 50 ? system ? maximum available gain g ma = 17.5 db at 70 ma, 3v, 2.4 ghz ? minimum noise figure nf min = 1 db at 30 ma, 3v, 2.4 ghz ? based on infineons reliable, high volume sige:c wafer technology ? easy to use pb-free (rohs compliant) standard package with visible leads ? qualified according aec q101 application examples driver amplifier ? ism bands 434 and 868 mhz ? 1.9 ghz cordless phones ? catv lna transmitter driver amplifier ? 2.4 ghz wlan / bluetooth, 2.4 / 3.5 ghz wimax output stage lna fo r active antennas ? tv, gps, sdars ? 2.4 / 5 ghz wlan ? 2.4 / 3.5 / 5 ghz wimax, etc suitable for 5 - 10.5 ghz oscillators attention: esd (electrostatic discharge) sensitive device, observe handling precautions BFP650 maximum ratings data sheet 8 revision 1.0, 2010-10-22 2 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 1 maximum ratings at t a = 25c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo open base ?4.0v t a = 25 c ?3.7v t a = -55 c collector emitter voltage v ces ? 13 v emitter / base shortened collector base voltage v cbo ? 13 v open emitter emitter base voltage v ebo ? 1.2 v open collector collector current i c ?150ma? base current i b ?10ma? total power dissipation 1) 1) t s is the soldering point temperature . t s measured on the emitter lead at the soldering point of the pcb. p tot ?500mw t s 80 c junction temperature t j ?150c? storage temperature t stg -65 150 c ? BFP650 thermal characteristics data sheet 9 revision 1.0, 2010-10-22 3 thermal characteristics figure 1 total power dissipation p tot = f ( t s ) table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance an077 r thjs ??140k/w? ts [c] ptot [mw] 0 100 200 300 400 500 600 0 50 100 150 ts [c] ptot [mw] 0 100 200 300 400 500 600 0 50 100 150 BFP650 electrical characteristics data sheet 10 revision 1.0, 2010-10-22 4 electrical characteristics 4.1 dc characteristics 4.2 general ac characteristics table 3 dc characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 44.5?v i c =3ma, i b =0 open base collector emitter leakage current i ces ??100 a v ce =13v, v be =0 ?140na v ce =5v, v be =0 emitter/base shortened collector base leakage current i cbo ?140na v cb =5v, i e =0 open emitter emitter base leakage current i ebo ?0.013 a v eb =0.5v, i c =0 open collector dc current gain h fe 100 170 250 v ce =3v, i c =70ma pulse measured table 4 general ac characteristics at t a =25c parameter symbol values unit note / test condition min. typ. max. transition frequency f t 31 41 ? ghz v ce =3v, i c =70ma, f =1ghz collector base capacitance c cb ? 0.26 0.4 pf v cb =3v, v be =0 v f =1mhz emitter grounded collector emitte r capacitance c ce ?0.45?pf v ce =3v, v be =0 v f =1mhz base grounded emitter base capacitance c eb ?1.3?pf v eb =0.5v, v cb =0 v f =1mhz collector grounded BFP650 electrical characteristics data sheet 11 revision 1.0, 2010-10-22 4.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 2 BFP650 testing circuit table 5 ac characteristics, v ce = 3 v, f =150mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?35.5? i c =30ma class a operation point g ms ?38? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?35? i c =30ma class a operation point s 21 ?37.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.75? i c =30ma associated gain g ass ?32? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?29.5? i c =70ma table 6 ac characteristics, v ce = 3 v, f =450mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?30? i c =30ma class a operation point g ms ?31.5? i c =70ma in out bias -t bias-t b (pin 1) e c e vc top view vb BFP650 electrical characteristics data sheet 12 revision 1.0, 2010-10-22 transducer gain db z s = z l =50 ? high linearity operation point s 21 ?29? i c =30ma class a operation point s 21 ?29.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.75? i c =30ma associated gain g ass ?29.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma table 7 ac characteristics, v ce = 3 v, f =900 mhz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?25.5? i c =30ma class a operation point g ms ?26.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?23.5? i c =30ma class a operation point s 21 ?24? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.8? i c =30ma associated gain g ass ?24.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?31? i c =70ma table 8 ac characteristics, v ce = 3 v, f =1.5 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ms ?22? i c =30ma class a operation point g ms ?22.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?19? i c =30ma class a operation point s 21 ?19.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.85? i c =30ma table 6 ac characteristics, v ce = 3 v, f =450mhz (cont?d) parameter symbol values unit note / test condition min. typ. max. BFP650 electrical characteristics data sheet 13 revision 1.0, 2010-10-22 associated gain g ass ?20.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?31? i c =70ma table 9 ac characteristics, v ce = 3 v, f =1.9 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?20.5? i c =30ma class a operation point g ms ?20? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?17? i c =30ma class a operation point s 21 15 17.5 ? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?0.95? i c =30ma associated gain g ass ?17.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30.5? i c =70ma table 10 ac characteristics, v ce = 3 v, f =2.4 ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?18? i c =30ma class a operation point g ma ?17.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?14.5? i c =30ma class a operation point s 21 ?15? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1? i c =30ma associated gain g ass ?15? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma table 8 ac characteristics, v ce = 3 v, f =1.5 ghz (cont?d) parameter symbol values unit note / test condition min. typ. max. BFP650 electrical characteristics data sheet 14 revision 1.0, 2010-10-22 note: 1. ac paramter limits verified by random sampling. 2. in order to get the nf min values stated in this chapter the test fixt ure losses have been subtracted from all measured result. 3. oip3 3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 11 ac characteristics, v ce = 3 v, f =3.5ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?14? i c =30ma class a operation point g ma ?14.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?11? i c =30ma class a operation point s 21 ?11.5? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.2? i c =30ma associated gain g ass ?11.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?17? i c =70ma 3rd order intercept point oip 3 ?30? i c =70ma table 12 ac characteristics, v ce = 3 v, f =5.5ghz parameter symbol values unit note / test condition min. typ. max. maximum power gain db high linearity operation point g ma ?10.5? i c =30ma class a operation point g ma ?10.5? i c =70ma transducer gain db z s = z l =50 ? high linearity operation point s 21 ?6.5? i c =30ma class a operation point s 21 ?7? i c =70ma minimum noise figure db z s = z opt minimum noise figure nf min ?1.6? i c =30ma associated gain g ass ?8.5? i c =30ma linearity dbm z s = z l =50 ? 1 db gain compression point op 1db ?16.5? i c =70ma 3rd order intercept point oip 3 ?29.5? i c =70ma BFP650 electrical characteristics data sheet 15 revision 1.0, 2010-10-22 4.4 characteristic dc diagrams figure 3 collector current vs. collector emitter voltage i c = f ( v ce ), i b = parameter figure 4 dc current gain h fe = f ( i c ), v ce = 3 v 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 v ce [v] i c [ma] 690a 460a 260a 160a 80a 18a 940a 810a 575a 350a 50 60 70 80 90 100 110 120 0.1 1 10 100 1000 i c [ma] h fe BFP650 electrical characteristics data sheet 16 revision 1.0, 2010-10-22 figure 5 collector current vs . base emitter voltage i c = f ( v be ), v ce = 2 v figure 6 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 2 v 0.01 0.1 1 10 100 1000 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v be [v] i c [ma] 0.0001 0.001 0.01 0.1 1 10 0.6 0.65 0.7 0.75 0.8 0.85 0. 9 v be [v] i b [ma] BFP650 electrical characteristics data sheet 17 revision 1.0, 2010-10-22 figure 7 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 2 v 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 0.8 1 1.2 1.4 1.6 1.8 2 v eb [v] i b [a] BFP650 electrical characteristics data sheet 18 revision 1.0, 2010-10-22 4.5 characteristic ac diagrams figure 8 transition frequency f t = f ( i c ), f = 1 ghz, v ce = parameter figure 9 3rd order intercept point oip 3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 35 40 45 i c [ma] f t [ghz] 4.00v 3.00v 2.50v 2.00v 1.00v 0 20 40 60 80 100 120 140 160 180 18 20 22 24 26 28 30 32 i c [ma] oip 3 [dbm] 3v, 2.4ghz 4v, 2.4ghz 3v, 3.5ghz 4v, 3.5ghz BFP650 electrical characteristics data sheet 19 revision 1.0, 2010-10-22 figure 10 collector base capacitance c cb = f ( v cb ), f = 1 mhz figure 11 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 3 v, i c = 70 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.1 0.2 0.3 0.4 0.5 0.6 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 f [ghz] g [db] g ms g ma |s 21 | 2 BFP650 electrical characteristics data sheet 20 revision 1.0, 2010-10-22 figure 12 maximum power gain g max = f ( i c ), v ce = 3 v, f = parameter in ghz figure 13 maximum power gain g max = f ( v ce ), i c = 70 ma, f = parameter in ghz 0 20 40 60 80 100 120 140 160 180 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 i c [ma] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42 v ce [v] g [db] 10.00ghz 5.50ghz 3.50ghz 2.40ghz 1.90ghz 1.50ghz 0.90ghz 0.45ghz 0.15ghz BFP650 electrical characteristics data sheet 21 revision 1.0, 2010-10-22 figure 14 input matching s 11 = f ( f ), v ce = 3 v, i c = 30 / 70 ma figure 15 source impedance for minimum noise figure z opt = f ( f ), v ce = 3 v, i c = 30 / 70 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz 1 2 3 4 5 6 7 8 9 10 70 ma 30 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.45ghz 0.9ghz 1.9ghz 2.4ghz 3.5ghz i c = 30ma i c = 70ma BFP650 electrical characteristics data sheet 22 revision 1.0, 2010-10-22 figure 16 output matching s 22 = f ( f ), v ce = 3 v, i c = 30 / 70 ma figure 17 noise figure nf min = f ( f ), v ce = 3 v, i c = 30 / 70 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 10 ghz 1 2 3 4 5 6 7 8 9 10 70 ma 30 ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [ghz] nfmin [db] i c = 30ma i c = 70ma BFP650 electrical characteristics data sheet 23 revision 1.0, 2010-10-22 figure 18 noise figure nf min = f ( i c ), v ce = 3 v, z s = z opt , f = parameter in ghz figure 19 noise figure nf 50 = f ( i c ), v ce = 3 v, z s = 50 ? , f = parameter in ghz 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c [ma] nfmin [db] f = 0.45ghz f = 0.9ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 i c [ma] nf50 [db] f = 0.45ghz f = 0.9ghz f = 1.9ghz f = 2.4ghz f = 3.5ghz BFP650 electrical characteristics data sheet 24 revision 1.0, 2010-10-22 figure 20 comparison noise figure nf 50 / nf min = f ( i c ), v ce = 3 v, f = 2.4 ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a = 25c. 0 20 40 60 80 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 i c [ma] nf [db] z s = z sopt z s = 50 ? BFP650 simulation data data sheet 25 revision 1.0, 2010-10-22 5 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the BFP650 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already co ntains the package parasitics and is ready to use for dc- and high frequency simulations. th e terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP650 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. BFP650 package information sot343 data sheet 26 revision 1.0, 2010-10-22 6 package information sot343 figure 21 package outline figure 22 package foot print figure 23 marking descriptio n (marking BFP650: r5s) figure 24 tape dimensions sot343-po v08 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 3 2 4 1 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. 0.6 sot343-fp v08 0.8 1.6 1.15 0.9 x y s 2009 , june date code (ym) 9 6 marking pin 1 manufacturer sot323-tp v02 0.2 4 2.15 8 2.3 1.1 pin 1 published by infineon technologies ag www.infineon.com |
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