MUH1PB thru muh1pd vishay general semiconductor document number: 89124 revision: 16-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product surface mount ultrafast rectifiers typical applications for use in secondary rectif ication and freewheeling for ultrafast switching speeds ac-to-ac and dc-to-dc converters for commercial applications. features ? very low profile - typical height of 0.65 mm ? ideal for automated placement ? oxide planar chip junction ? low forward voltage drop, low leakage current ? ultrafast recovery times for high frequency ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 265 c max. 10 s, per jesd 22-a111 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: microsmp molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free and rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.0 a v rrm 100 v, 150 v, 200 v i fsm 10 a t rr 25 ns v f at i f = 1.0 a 0.82 v i r 1 a t j max. 175 c top view bottom view microsmp esmp tm series maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol MUH1PB muh1pc muh1pd unit device marking code hb hc hd maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 10 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
new product MUH1PB thru muh1pd vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89124 revision: 16-jun-09 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) free air, mounted on recommended copper pad area. thermal resistance r ja - from junction to ambient, r jm - and junction to mount. ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c, unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage (1) i f = 0.5 a i f = 1.0 a t a = 25 c v f 0.90 1.0 - 1.05 v i f = 0.5 a i f = 1.0 a t a = 125 c 0.72 0.82 - 0.90 maximum reverse current (2) rated v r t a = 25 c t a = 125 c i r - 3.0 1.0 15 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t a = 25 c t rr 19 25 ns typical reverse recovery time i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm 29 40 typical softness factor (t b /t a ) i f = 1.0 a, di/dt = 200 a/s, v r = 200 v t a = 125 c s0.5 - typical reverse recovery current i rm 3.4 4.6 a typical stored charge q rr 45 - nc typical junction capacitance 4.0 v, 1 mhz c j 10 - pf thermal characteristics (t a = 25 c, unless otherwise noted) parameter symbol MUH1PB muh1pc muh1pd unit typical thermal resistance (1) r ja r jm 166 40 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode muh1pd-m3/89a 0.006 89a 4500 7" diameter plastic tape and reel figure 1. maximum forward current derating curve 0 0.2 0.4 0.6 0. 8 1.0 1.2 95 105 115 125 135 145 165 175 155 mo u nt temperat u re (c) a v erage for w ard rectified c u rrent (a) t m meas u red at the cathode band terminal figure 2. forward power loss characteristics 0 0.2 0.4 0.6 0. 8 1.0 1.2 0 0.2 0.4 0. 8 1.0 1.2 0.6 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = t p /t t p t d = 1.0 d = 0. 8 d = 0.5 d = 0.1 d = 0.2 d = 0.3
new product MUH1PB thru muh1pd vishay general semiconductor document number: 89124 revision: 16-jun-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 0.01 0.1 0.4 0.6 0. 8 1 1.2 1.4 1.6 1. 8 2.0 2.2 0.2 1 10 100 instantaneo u s for w ard v oltage ( v ) t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard c u rrent (a) t a = 175 c t a = 100 c 100 10 1 0.1 0.001 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 0.01 t a = 25 c t a = 100 c t a = 125 c t a = 150 c t a = 175 c figure 5. typical junction capacitance figure 6. typical transient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 1 10 10 100 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 1000 100 10 1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to am b ient 0.020 (0.50) 0.043 (1.10) 0.029 (0.73) 0.025 (0.63) 0.106 (2.70) 0.091 (2.30) 0.039 (0.9 8 ) 0.031 (0.7 8 ) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.030 (0.75) 0.022 (0.55) 0.091 (2.30) 0.0 8 3 (2.10) 0.055 (1.40) 0.047 (1.20) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0. 8 0) 0.032 (0. 8 0) mountin g pad layout cathode band microsmp
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