mmbt8050c / MMBT8050D npn silicon epitaxial planar transistor for switching and amplifier applications. as complementary type the pnp transistor mmbt8550c and mmbt8550d are recommended. sot-23 plastic package absolute maxi m u m ratings (t a = 25 o c ) t i n u e u l a v l o b m y s v e g a t l o v r e t t i m e r o t c e l l o c ceo 25 v v e g a t l o v e s a b r o t c e l l o c cbo 40 v v e g a t l o v e s a b r e t t i m e ebo 6 v i t n e r r u c r o t c e l l o c c 600 ma p n o i t a p i s s i d r e w o p tot 200 mw t e r u t a r e p m e t n o i t c n u j j 150 o c t e g n a r e r u t a r e p m e t e g a r o t s s -55 to +150 o c ? ????-?? ?.: (495) 795-0805 ??: (495) 234-1603 . : info@rct.ru ??: www.rct.ru
dated : 20/10/2005 r semtech electronics ltd. ( subsidiary of semtech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) mmbt8050c / MMBT8050D characteristics at t a =25 o c symbol min. typ. max. unit dc current gain at v ce =1v, i c =100ma at v ce =1v, i c =500m a mmbt8050c MMBT8050D h fe h fe h fe 100 160 40 - - - 250 400 - - - - collector cutoff current at v cb =35v i cbo - - 100 na collector saturation voltage at i c =500ma, i b =50ma v ce(sat) - - 0.5 v base saturation voltage at i c =500ma, i b =50ma v be(sat) - - 1.2 v collector emitter breakdown voltage at i c =2ma v (br)ceo 25 - - v collector base breakdown voltage at i c =10a v (br)cbo 40 - - v emitter base breakdown voltage at i e =100a v (br)ebo 6 - - v gain bandwidth product at v ce =5v, i c =10ma, f=50mhz f t - 100 - mhz collector base capacitance at v cb =10v, f=1mhz c cbo - 12 - pf thermal resistance junction to ambient r tha - - 200 k/w
dated : 20/10/2005 r semtech electronics ltd. ( subsidiary of semtech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) v ce =5v tamb=25 c f=20mhz typical limits at tamb=25 c pulse thermal resistance versus pulse duration v alid provided that leads are kept at ambient temperature at a distance of 2 mm from case -1 -5 0.005 2 v=0 10 10 10 -6 -1 2 5 1 0.01 t -3 10 10 -4 10 10 t -2 tp v= tp 0.2 rtha 2 5 10 0.05 0.02 0.1 2 5 10 0.5 2 k/w 5 10 3 5 1 10 1 tp s 2 10 p i 10 3 2 4 i c 25 10 2 2 5 10 25 5 f t 7 10 2 3 2 4 10 7 mhz 3 1v gain bandwidth product versus collector current o admissible power dissipation versus ambient temperature valid provided that leads are kept at ambient temperature at a distance of 2mm from case p tot 0 0 0.2 100 0.4 0.6 1 0.8 w 150 c 2 o 10 -1 1 o 200 c t amb 10 2 5 10 2 5 i c 2 5 01 collector current versus base emitter voltage 10 2 5 ma 3 25 c -50 c o o 3 10 ma 2v v be mmbt8050c / MMBT8050D
dated : 20/10/2005 r semtech electronics ltd. ( subsidiary of semtech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) v 0.5 0.4 0.3 v cesat 0.2 0.1 0 -1 10 1 10 3 10 ma 2 10 collector saturation voltage versus collector current i c dc current gain versus collector current 1000 700 500 400 300 200 100 70 50 40 30 20 10 h fe -1 10 1 10 2 10 3 10 i c -1 10 1 10 ma 3 10 2 10 i c 012v v ce ma 500 400 300 200 100 0 i c 0 1 2 v besat common emitter collector characteristics base saturation voltage versus collector current typical limits at tamb=25 c o typical limits at tamb=25 c o o 25 c o -50 c o 150 c -50 c o 2 5 c o 150 c o =10 ic i b =10 ic i b t a m b = 2 5 c v ce =1v o -50 c 150 c o o 0.6 1.8 2 2.8 3.2 2.4 1.4 1.2 1 0.4 0.8 1.6 i b =0.2ma v mmbt8050c / MMBT8050D
dated : 20/10/2005 r semtech electronics ltd. ( subsidiary of semtech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) 20v 10 0 0 20 40 60 80 100 i c ma 500 400 300 200 100 i c 0 012v v ce common emitter collector characteristics v ce common emitter collector characteristics 0.75 0.8 0.85 0.9 v be =0.7v i b =0.05ma 0.1 0.15 0.2 0.25 0.3 0.35 ma mmbt8050c / MMBT8050D
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