ds30303 rev. a-2 1 of 2 imt4 epitaxial planar die construction complementary npn type available (imx8) small surface mount package features maximum ratings @ t a = 25 c unless otherwise specified a m j l f d b c h k b 2 b 1 e 1 c 2 e 2 c 1 kx7 mechanical data case: sot-26, molded plastic case material - ul flammability rating classification 94v-0 terminals: solderable per mil-std-202, method 208 terminal connections: see diagram marking: kx7 weight: 0.016 grams (approx.) imt4 dual pnp small signal surface mount transistor sot-26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d 0.95 f 0.55 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 all dimensions in mm characteristic symbol imt4 unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -50 ma power dissipation (note 1) p d 225 mw thermal resistance, junction to ambient (note 1) r ja 555 c/w operating and storage temperature range t j ,t stg -55 to +150 c new product electrical characteristics @ t a = 25 c unless otherwise specified notes: 1.device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes inc. suggested pad layout ap02001, whi ch can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mw per element must not be exceeded. 2. short duration pulse test used to minimize self-heating effect. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. characteristic symbol min typ max unit test condition off characteristics (note 2) collector-base breakdown voltage v (br)cbo -120 v i c = -50 a collector-emitter breakdown voltage v (br)ceo -120 v i c = -1.0ma emitter-base breakdown voltage v (br)ebo -5.0 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -100v emitter cutoff current i ebo -0.5 a v eb = -4.0v on characteristics (note 2) dc current gain h fe 180 820 i c = -2.0ma, v ce = -6.0v collector-emitter saturation voltage v ce(sat) -0.5 v i c = -10ma, i b = -1.0ma small signal characteristics current gain-bandwidth product f t 140 mhz v ce = -12v, i e = 2.0ma, f = 100mhz device packaging shipping IMT4-7 sot-26 3000/tape & reel ordering information (note 3)
ds30303 rev. a-2 2 of 2 imt4 new product marking information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 code jklm n op date code key kx7 ym kx7 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september
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