? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c25 a v ge = 0 v t j = 125 c 250 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15v 2.4 3.0 v igbt optimized for switching up to 5khz symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 100 ? i cm = 24 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c75w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds99199(8/04) features ? international standard packages jedec to-220ab and to-263aa ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? capacitor discharge advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) ixga 12n120a2 ixgp 12n120a2 preliminary data sheet v ces = 1200 v i c25 = 24 a v ce(sat) = 3.0 v
ixys reserves the right to change limits, test conditions, and dimensions. ixga12n120a2 IXGP12N120A2 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 v ce = 10 v 4.0 7.8 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 10 v, v ce = 10v 35 a c ies 530 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 30 pf c res 4pf q g 24 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 5.5 nc q gc 8.8 nc t d(on) 15 ns t ri 30 ns t d(off) 680 1000 ns t fi 650 1000 ns e off 5.4 9.0 mj t d(on) 15 ns t ri 30 ns e on 0.5 mj t d(off) 700 ns t fi 1050 ns e off 7.7 mj r thjc 1.66 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 100 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 960 v, r g = r off = 100 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g min. recommended footprint (dimensions in inches and mm) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved ixga12n120a2 IXGP12N120A2 fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13v 5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 24 0.511.522.5 33.544.55 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 24 0.511.522.5 33.544.55 v c e - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 12a i c = 6a v ge = 15v i c = 24a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 16 v g e - volts v c e - volts t j = 25 o c i c = 24a 12a 6a fig. 6. input adm ittance 0 3 6 9 12 15 18 21 24 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixga12n120a2 IXGP12N120A2 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 0 3 6 9 121518212427 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0 2 4 6 8 10 12 14 16 18 0 200 400 600 800 1000 r g - ohms e o f f - millijoules i c = 6a t j = 25 o c v ge = 15v v ce = 960v i c = 12a i c = 24a fig. 9. dependence of turn-off energy loss on i c 0 2 4 6 8 10 12 14 16 6 9 12 15 18 21 24 i c - amperes e o f f - millijoules r g =100 ? v ge = 15v v ce = 960v t j = 25 o c fig. 10. dependence of turn-off delay tim e on r g 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0 200 400 600 800 1000 r g - ohms t d ( o f f ) - microseconds i c = 6a 12a 24a v ge = 15v v ce = 960v t j = 25 o c fig. 12. dependence of turn-off sw itching tim e on i c 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 6 8 10 12 14 16 18 20 22 24 i c - amperes switching time -microseconds t d(off) t fi - - - - - r g = 100 ? v ge = 15v v ce = 960v t j = 25 o c fig. 11. dependence of turn-off current fall time on r g 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0 200 400 600 800 1000 r g - ohms t f i - microseconds i c = 24a v ge = 15v v ce = 960v t j = 25 o c i c = 12a i c = 6a
? 2004 ixys all rights reserved ixga12n120a2 IXGP12N120A2 fig. 13. gate charge 0 2 4 6 8 10 12 14 16 024681012141618202224 q g - nanocoulombs v g e - volts v ce = 600v i c = 12a i g = 10ma fig. 15. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 14. reverse-bias safe operating area 0 5 10 15 20 25 30 100 300 500 700 900 1100 1300 v c e - volts i c - amperes t j = 125 o c r g = 100 ? dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0.10 1.00 10.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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