ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1035 mp 35 watt, 50 volts, class c avionics 1025 - 1150 mhz general description the 1035 mp is a common base bipolar transistor. it is designed for pulsed systems in the frequency band 1025-1150 mhz. the device has gold thin-film metallization for proven highest mttf. the transistor includes input prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. case outline 55fu, style 1 absolute maximum ratings maximum power dissipation @ 25 c 125 watts pk o2 maximum voltage and current bvces collector to emitter voltage 65 volts bvebo emitter to base voltage 3.5 volts ic collector current 2.5 amps pk maximum temperatures storage temperature - 65 to + 150 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power out power input power gain efficiency load mismatch tolerance f= 1025-1150 mhz vcc = 50 volts pw = 10 m sec df = 1% f = 1090 mhz 35 10 10.5 45 3.5 10:1 watts watts db % bvebo bvces hfe cob q jc 2 emitter to base breakdown collector to emitter breakdown dc current gain to emitter output capacitance thermal resistance ie = 5 ma ic = 15ma vce = 5v, ic = 100 ma vcb = 50 v, f = 1 mhz pulsed 3.5 65 20 17 20 1.4 volts volts pf c/w o note 1: at rated output power and pulse conditions 2: at rated pulse conditions issue december 6, 1995
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