tst0950 rev. a7, 04-oct-00 1 () sige low noise amplifier (900 mhz) description the tst0950 is a low-noise amplifier (lna) in sige technology. this lna offers the possibility to apply a gain switching through a control input pin, and provides a power-down mode function for extending the battery operation time. in low-gain mode, the output drive capability is not reduced, resulting in improved intermodulation performance. the nominal gain is very precise and has max. 1.0 db gain variation over full temperature range and supply-voltage range. electrostatic sensitive device. observe precautions for handling. features input frequency 925 to 960 mhz low noise figure at high gain mode (typ. 2.2 db) precise gain (19 db, 1.0 db) low / high gain mode high gain flatness ( 0.3 db max.) power-down function high reverse isolation (min. 40 db) small package (tsso8) block diagram bandgap 1 rf in v cc v gain p on 37 4 5 rf out 2 gnd 8 gnd 6 gnd figure 1. block diagram ordering information extended type number package remarks tst0950 -mfdg3 tsso8 taped and reeled
tst0950 rev. a7, 04-oct-00 2 () pin description pin symbol function 1 rf in rf input 2 gnd ground 3 v cc supply voltage 4 p on power-down input 5 rf out rf output 6 gnd ground 7 v gain gain switching input 8 gnd ground 1 2 3 4 8 7 6 5 rf in gnd v cc p on gnd v gain gnd rf out tst0950 figure 2. pinning functional description the tst0950 is a very precise amplifer, especially designed for gsm telephone applications. the circuit consists of three stages. by attenuating the output signal of the first stage, the complete amplifier gain is reduced and the intermodulation behavior is improved. absolute maximum ratings all voltages refer to gnd (pins 2, 6 and 8) parameter symbol min. max. unit supply voltage pin 3 v cc 2.7 3.3 v junction temperature t j 40 +125 c storage temperature t stg 40 +150 c input power pin 1 rf in 10 dbm power-down input pin 4 p on 0 v cc v gain switching input pin 7 v gain 0 v cc v solder reflow profile (smd packages) parameter symbol value unit maximum heating rate t d 1 to 3 c/s peak temperature in preheat zone t ph 100 to 140 c duration of time above melting point of solder t mp min. 10 / max. 130 s peak reflow temperature t peak 220 to 225 c maximum cooling rate t peak 2 to 4 c/s wave soldering (through-hole packages) parameter symbol value unit maximum lead temperature (5 s) t d 260 c
tst0950 rev. a7, 04-oct-00 3 () operating range all voltages refer to gnd (pins 2, 6 and 8) parameter symbol min. typ. max. unit supply voltage v cc 2.7 2.8 2.9 v ambient temperature t amb 20 +70 c input frequency if in 925 960 mhz note for biasing: supply first v cc , then p on and v gain (see absolute maximum ratings) electrical characteristics test conditions: v cc = + 2.8 v, t amb = +25 c, unless otherwise specified, *) with external matching (see application circuit) parameter test conditions / pins symbol min. typ. max. unit power supply supply voltage pin 3 v cc 2.7 2.8 2.9 v current consumption active mode power-down mode i a i pd 10 50 12 200 ma m a if input input impedance *) pin 1 z i 50 output impedance *) pin 5 z o 50 frequency band f in 925 960 mhz nominal gain pin 1 to 5 g 18 19 20 db gain attenuation related to nominal gain pin 1 to 5 g 15 17 db gain flatness pin 1 to 5 0.3 +0.3 db noise figure in low-gain mode in high-gain mode pin 1 to 5 nf nf 11 2.2 20 2.5 db db input vswr *) in low-gain mode in high-gain mode lna active pin 1 vswr vswr 2:1 2:1 output vswr *) lna active pon = `1' pin 5 vswr 2:1 lna inactive pon = `0' pin 5 vswr 3:1 input 1 db compression point in low-gain mode in high-gain mode pin 1 to 5 16 21 dbm dbm input intercept point 3rd order in low-gain mode in high-gain mode pin 1 to 5 7 12 dbm dbm reverse isolation in low-gain mode in high-gain mode pin 5 to 1 40 38 db db
tst0950 rev. a7, 04-oct-00 4 () electrical characteristics (continued) test conditions: v cc = + 2.8 v, t amb = +25 c, unless otherwise specified, *) with external matching (see application circuit) unit max. typ. min. symbol test conditions / pins parameter control function control inputs threshold high level low level pins 4 and 7 v th v th 0.97 v cc 0.03 v cc v v leakage current on control inputs low level pins 4 and 7 i l 100 m a power - down logic level p on powe r status `0' power off `1' power on gain control logic gai n leve l v g a i n gain `0' minimum gain `1' maximum gain test circuit 8 7 65 123 4 tst0950 c 8 39p c 7 3.9p v gain rf out c 3 39p c 4 1n c 5 39p c 1 33p v cc p on rf in c 2 5.6p c 6 33p l 1 6.8nh 6.8n l 2 1n 220 v cc c 9 figure 3. t est circuit
tst0950 rev. a7, 04-oct-00 5 () package information technical drawings according to din specifications package tsso8 dimensions in mm 0.38 0.25 0.65 1.95 0.9 0.8 0.15 0.05 5.0 4.8 3.1 2.9 0.20 0.13 85 1 4 3.1 2.9
tst0950 rev. a7, 04-oct-00 6 () ozone depleting substances policy statement it is the policy of atmel germany gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. atmel germany gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. atmel germany gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use atmel wireless & microcontrollers products for any unintended or unauthorized application, the buyer shall indemnify atmel wireless & microcontrollers against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. data sheets can also be retrieved from the internet: http://www.atmelwm.com atmel germany gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2594, fax number: 49 (0)7131 67 2423
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