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profet ? bts 640 s2 semiconductor group page 1 of 14 2002-sep-30 smart sense high-side power switch features ? short circuit protection ? current limitation ? proportional load current sense ? cmos compatible input ? open drain diagnostic output ? fast demagnetization of inductive loads ? undervoltage and overvoltage shutdown with auto-restart and hysteresis ? overload protection ? thermal shutdown ? overvoltage protection including load dump (with external gnd-resistor) ? reverse battery protection (with external gnd- resistor) ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection application ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and capacitve loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in smart sipmos technology. fully protected by embedded protection functions. block diagram in st esd logic voltage sensor voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 3 1 signal gnd gnd 2 v logic overvoltage protection + v bb profet out 4 6, 7 load gnd load gnd r o current sense output voltage detection r is is 5 i is i l product summary operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 30 m ? load current (iso) i l(iso) 12.6 a current limitation i l(scr) 24 a package to220-7-11 to263-7-2 to220-7-12 1 1 1 standard (staggered) smd straight
bts 640 s2 semiconductor group page 2 2002-sep-30 pin symbol function 1st diagnostic feedback: open drain, invers to input level 2 gnd logic ground 3 in input, activates the power switch in case of logical high signal 4v bb positive power supply voltage, the tab is shorted to this pin 5is sense current output, proportional to the load current, zero in the case of current limitation of load current 6 & 7 out (load, l) output, protected high-side power output to the load. both output pins have to be connected in parallel for operation according this spec (e.g. k ilis ). design the wiring for the max. short circuit current maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 43 v supply voltage for full short circuit protection t j start =-40 ...+150c v bb 34 v load dump protection 1 ) v loaddump = v a + v s , v a = 13.5v r i 2) = 2 ? , r l = 1 ? , t d = 200 ms, in= low or high v load dump 3 ) 60 v load current (short circuit current, see page 5) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 85 w inductive load switch-off ener gy dissipation, sin g le pulse v bb = 12v, t j,start = 150c, t c = 150c const. i l = 12.6 a, z l = 4,2 mh, 0 ? : i l = 4 a, z l = 330 mh, 0 ? : e as e as 0,41 3,5 j electrostatic dischar g e capabilit y ( esd ) in: (human body model) st, is: out to all other pins shorted: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 r=1.5k ? ; c=100pf v esd 1.0 4.0 8.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) current through current sense pin (dc) see internal circuit diagrams page 9 i in i st i is 2.0 5.0 14 ma 1 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 ? resistor in the gnd connection is recommended). 2) r i = internal resistance of the load dump test pulse generator 3) v load dump is setup without the dut connected to the generator according to iso 7637-1 and din 40839
bts 640 s2 semiconductor group page 3 2002-sep-30 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case : r thjc -- -- 1.47 k/w junction - ambient (free air): r thja -- -- 75 smd version, device on pcb 4) :--33-- 4 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 4 to 6&7) i l = 5 a t j =25 c: t j =150 c: r on -- 27 54 30 60 m ? output voltage drop limitation at small load currents (pin 4 to 6&7), see page 15 i l = 0.5 a t j =-40...+150c: v on(nl) -- 50 -- mv nominal load current, iso norm (pin 4 to 6&7) v on = 0.5 v, t c = 85 c i l(iso) 11.4 12.6 -- a nominal load current, device on pcb 4) t a = 85 c, t j 150 c v on 0.5 v, i l(nom) 4.0 4.5 -- a output current (pin 6&7) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 10; not tested, specified by design i l(gndhigh) -- -- 8 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 ? , t j =-40...+150c t on t off 25 25 70 80 150 200 s slew rate on 10 to 30% v out , r l = 12 ? , t j =-40...+150c d v /dt on 0.1 -- 1 v/ s slew rate off 70 to 40% v out , r l = 12 ? , t j =-40...+150c -d v /dt off 0.1 -- 1 v/ s
bts 640 s2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 4 2002-sep-30 operating parameters operating voltage 5 ) t j =-40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c: v bb(under) 3.2 -- 5.0 v undervolta g e restart t j =-40...+25c: t j =+150c: v bb(u rst) -- 4.5 5.5 6.0 v undervolta g e restart of char g e pump see diagram page 14 t j =-40...+25c: t j =25...150c: v bb(ucp) -- -- 4.7 -- 6.5 7.0 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.5 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j =-40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c: ? v bb(over) -- 1 -- v overvolta g e protection 6 ) t j =-40c: i bb =40 ma t j =+25...+150c v bb(az) 41 43 -- 47 -- 52 v standb y current ( pin 4 ) v in =0 t j =-40...+25c : t j = 150c: i bb(off) -- -- 4 12 15 25 i bb(off) ) v in=0 , t j =-40...+150c : i l(off) -- -- 10 a operating current (pin 2) 7) , v in =5 v i gnd -- 1.2 3 ma 5 ) at supply voltage increase up to v bb = 4.7 v typ without charge pump, v out v bb - 2 v 6) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins (a 150 ? resistor in the gnd connection is recommended). see also v on(cl) in table of protection functions and circuit diagram page 10. 7 ) add i st , if i st > 0, add i in , if v in >5.5 v
bts 640 s2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 5 2002-sep-30 protection functions initial peak short circuit current limit (pin 4 to 6&7) i l(scp) t j =-40 c: t j =25 c: t j =+150 c: 48 40 31 56 50 37 65 58 45 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 13) -- 24 -- a output clamp (inductive load switch off) at v out = v bb - v on ( cl ) ; i l = 40 ma, t j =-40 c: t j =+25..+150 c: v on(cl) 41 43 -- 47 -- 52 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 4 to 2) 8 ) - v bb -- -- 32 v reverse battery voltage drop (v out > v bb ) i l = -5 a t j =150 c: -v on(rev) -- 600 -- mv diagnostic characteristics current sense ratio 9) , static on-condition, v is = 0...5 v, v bb(on) = 6.5 10) ...27v, k ilis = i l / i is t j = -40 c, i l = 5 a: k ilis 4550 5000 6000 t j = -40 c, i l = 0.5 a: 3300 5000 8000 t j = 25...+150 c, i l = 5 a: , t j = 25...+150 c, i l = 0.5 a: 4550 4000 5000 5000 5550 6500 current sense output voltage limitation t j = -40 ...+150 c i is = 0, i l = 5 a: v is(lim) 5.4 6.1 6.9 v current sense leakage/offset current t j = -40 ...+150 c v in =0, v is = 0, i l = 0: i is(ll) 0--1 a 8 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 10). 9) this range for the current sense ratio refers to all devices. the accuracy of the k ilis can be raised at least by a factor of two by matching the value of k ilis for every single device. in the case of current limitation the sense current i is is zero and the diagnostic feedback potential v st is high. see figure 2b, page 12. 10) valid if v bb(u rst) was exceeded before.
bts 640 s2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 6 2002-sep-30 v in =5 v, v is = 0, i l = 0: i is(lh) 0--15 v in =5 v, v is = 0, v out = 0 (short circuit) :( i is(sh) not tested, specified by design) i is(sh) 0--10 current sense settling time to i is static 10% after positive input slope, i l = 0 5 a, t j = -40...+150 c (not tested, specified by design) t son(is) -- -- 300 s current sense settling time to 10% of i is static after negative input slope , i l = 5 0 a , t j = -40...+150 c (not tested, specified by design) t soff(is) -- 30 100 s current sense rise time (60% to 90%) after change of load current i l = 2.5 5 a (not tested, specified by design) t slc(is) -- 10 -- s open load detection voltage 11 ) (off-condition) t j =-40..150 c: v out(ol) 234v internal output pull down (pin 6 to 2), v out =5 v, t j =-40..150 c r o 51540 k ? input and status feedback 12 ) input resistance see circuit page 9 r i 3,0 4,5 7,0 k ? input turn-on threshold voltage t j =-40..+150 c : v in(t+) -- -- 3.5 v input turn-off threshold voltage t j =-40..+150 c : v in(t-) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v off state input current (pin 3), v in = 0.4 v t j =-40..+150 c i in(off) 1--50 v in = 5 v t j =-40..+150 c i in(on) 20 50 90 c: t don(st) -- 13 -- s status delay after negative input slope (not tested, specified by design) t j =-40 ... +150 c: t doff(st) -- 1 -- s 11) external pull up resistor required for open load detection in off state. 12) if a ground resistor r gnd is used, add the voltage drop across this resistor.
bts 640 s2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 7 2002-sep-30 status output (open drain) zener limit voltage t j =-40...+150 c, i st = +1.6 ma: st low volta g e t j =-40...+25 c, i st = +1.6 ma: t j = +150 c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- 6.9 0.4 0.7 v status leakage current, v st = 5 v, t j =25 ... +150 c: i st(high) -- -- 2 a
bts 640 s2 semiconductor group page 8 2002-sep-30 truth table input output status current sense level level level i is normal operation l h l h h l 0 nominal current- limitation l h l h h h 0 0 short circuit to gnd l h l l 13 ) h h 0 0 over- temperature l h l l h h 0 0 short circuit to v bb l h h h l 14 ) l 0 typ.3v. under this condition the sense current i is is zero 14) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 15 ) low ohmic short to v bb may reduce the output current i l and therefore also the sense current i is . 16 ) power transistor off, high impedance 17 ) with external resistor between pin 4 and pin 6&7
bts 640 s2 semiconductor group page 9 2002-sep-30 terms profet v is st out gnd bb v st v in i st i in v bb i bb i gnd 6 2 4 3 5 in v is i is v out v on i l out 1 7 r gnd input circuit (esd protection) in gnd i r esd-zd i i i the use of esd zener diodes as voltage clamp at dc conditions is not recommended. status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5 ma; r st(on) < 440 ? at 1.6 ma, the use of esd zener diodes as voltage clamp at dc conditions is not recommended. current sense output is gnd is r is i esd-zd is v esd-zener diode: 6.1 v typ., max 14 ma; r is = 1 k ? nominal inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ.
bts 640 s2 semiconductor group page 10 2002-sep-30 overvoltage protection of logic part + v bb is st r gnd gnd r signal gnd logic v z2 in r i v z1 st is r + 5v v r v z1 = 6.1 v typ., v z2 = 47 v typ., r i = 4 k ? typ , r gnd = 150 ?, r st = 15 k ? , r is = 1 k ? , r v = 15 k ? , reverse battery protection gnd logic is st r in st is r + 5v v r out l r power gnd gnd r signal gnd power inverse i r v bb - diode z1 v the load r l is inverse on, temperature protection is not active r gnd = 150 ?, r i = 4 k ? typ , r st 500 ? , r is 200 ? , r v 500 ? , open-load detection off-state diagnostic condition: v out > 3 v typ.; in low logic st out v out signal gnd r ext r o off v bb gnd disconnect profet v st is out gnd bb v bb i bb 6 2 4 3 5 in out 1 7 v in v st v is v gnd any kind of load. in case of input=high is v out v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up profet v st is out gnd bb v bb 6 2 4 3 5 in out 1 7 v in v st v is v gnd any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load profet v st is out gnd bb v bb 6 2 4 3 5 in out 1 7 high normal load current can be handled by the profet itself.
bts 640 s2 semiconductor group page 11 2002-sep-30 v bb disconnect with charged external inductive load profet v st is out gnd bb 6 2 4 3 5 in out 1 7 v bb high d r l l if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch-off energy dissipation profet in st out gnd v bb = e e e e as bb l r e load is 1 2 5 3 4 6 7 out v bb energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | )
bts 640 s2 semiconductor group page 12 2002-sep-30 timing diagrams figure 1a: switching a resistive load, change of load current in on-condition: in st out l t v i i is t son ( is ) tt slc ( is ) slc ( is ) load 1 load 2 soff ( is ) t t don ( st ) t doff ( st ) t t on off the sense signal is not valid during settling time after turn or change of load current. figure 1b: v bb turn on: in v l t i bb st i is proper turn on under all conditions figure 2a: switching a lamp in st out l t v i i is figure 2b: switching a lamp with current limit: in st out l t v i i is
bts 640 s2 semiconductor group page 13 2002-sep-30 figure 2c: switching an inductive load: in st t v i out l i is figure 3a: short circuit: shut down by overtempertature, reset by cooling in st t i l(scr) i i l(scp) i is l heating up may require several milliseconds, depending on external conditions i l(scp) = 50 a typ. increases with decreasing temperature. figure 4a: overtemperature: reset if t j < t jt st j t t in i l i is figure 5a: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal i is
bts 640 s2 semiconductor group page 14 2002-sep-30 figure 5b: open load: detection in on- and off-state (with r ext ), turn on/off to open load in st out t v i open load l i is d(st ol3) t figure 6a: undervoltage: in v t bb st v v bb(under) bb(u cp) v i l i is bb(u rst) not defined figure 6b: undervoltage restart of charge pump bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state charge pump starts at v bb(ucp) =4.7 v typ. figure 7a: overvoltage: in v t bb st on(cl) v v bb(over) v bb(o rst) i l i is
bts 640 s2 semiconductor group page 15 2002-sep-30 figure 8a: current sense versus load current: 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0123456 i l [a] [ma] i is figure 8b: current sense ratio 18 : 0 5000 10000 15000 012345678910111213 i l [a] k ilis figure 9a: output voltage drop versus load current: 0.0 0.1 0.2 012345678 i l [a] [v] v on on(nl) v on r 18 this range for the current sense ratio refers to all devices. the accuracy of the k ilis can be raised at least by a factor of two by matching the value of k ilis for every single device.
bts 640 s2 semiconductor group page 16 2002-sep-30 package and ordering code all dimensions in mm standard (=staggered): p-to220-7-11 sales code bts640s2 ordering code q67060-s6307-a5 smd: p-to263-7-2 (tape&reel) sales code bts640s2 g ordering code q67060-s6307-a6 straight: p-to220-7-12 sales code bts640s2 s ordering code q67060-s6307-a7 published by siemens ag, bereich bauelemente, vertrieb, produkt-information, balanstra ? e 73, d-81541 m nchen siemens ag 2002. all rights reserved as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. the information describes a type of component and shall not be considered as warranted characteristics. the characteristics for which siemens grants a warranty will only be specified in the purchase contract. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the siemens companies and representatives woldwide (see address list). due to technical requirements components may contain dan- gerous substances. for information on the type in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing: please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 19 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 20 ) with the express written approval of the semiconductor group of siemens ag. 19) a critical component is a component used in a life-support device or system whose failure can reas onably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 20) life support devices or systems are int ended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered. typical ?.1 1.27 4.4 9.25 ?.2 0.05 1) all metal surfaces tin plated, except area of cut. c 2.4 0.5 ?.1 ?.3 8.6 10.2 ?.3 ?.4 3.9 ?.4 8.4 3.7 ?.3 a a 0.25 m 9.8 ?.15 2.8 1) 15.65 ?.3 13.4 0...0.15 1.27 0.6 ?.1 c ?.2 17 ?.3 8.5 1) 10 ?.2 3.7 -0.15 7x a 8? max. b a 0.25 m 0.1 typical 9.8 ?.15 ?.2 10 8.5 1) 8 1) (15) ?.2 9.25 ?.3 1 0...0.15 7x0.6 ?.1 ?.1 1.27 4.4 b 0.5 ?.1 ?.3 2.7 4.7 ?.5 0.05 1) 0.1 all metal surfaces tin plated, except area of cut. ?.3 1.3 2.4 6x1.27 a b a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 1.27 0.6 0.1 0.1 1.27 4.4 b 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 13 0.5 0.5 11 7x

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