vishay general semiconductor V8P10 document number: 89005 revision: 26-jun-07 www.vishay.com 1 new product high current density surface mount trench mos barrier schottky rectifier ultra low v f = 0.466 v at i f = 4 a features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, free- wheeling, dc-to-dc converters and polarity protection applications. mechanical data case: to-277a (smpc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) to-277a (smpc) anode 1 anode 2 cathode k k 2 1 tmbs ? esmp tm series major ratings and characteristics i f(av) 8 a v rrm 100 v i fsm 150 a e as 100 mj v f at i f = 8 a 0.582 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol V8P10 unit device marking code v810 maximum repetitive peak reverse voltage v rrm 100 v maximum average forward rectified current (see fig. 1) i f(av) 8a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 150 a non-repetitive avalanche energy at i as = 2.0 a, l = 50 mh, t j = 25 c e as 100 mj voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j, t stg - 40 to + 150 c
www.vishay.com 2 document number: 89005 revision: 26-jun-07 vishay general semiconductor V8P10 new product note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) units mounted on recommended p.c.b. 1 oz. pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ max. unit breakdown voltage at i r = 1.0 ma t j = 25 c v (br) 100 (minimum) - v instantaneous forward voltage (1) at i f = 4 a at i f = 8 a t j = 25 c v f 0.522 0.643 - 0.68 v at i f = 4 a at i f = 8 a t j = 125 c 0.466 0.582 - 0.62 reverse current (1) at v r = 70 v t j = 25 c t j = 125 c i r 4.7 3.0 - - a ma at v r = 100 v t j = 25 c t j = 125 c 14.5 7.0 70 15 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol V8P10 unit typical thermal resistance r ja (1) r jl 60 3 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode V8P10-e3/86a 0.10 86a 1500 7" diameter plastic tape & reel V8P10-e3/87a 0.10 87a 6500 13" diameter plastic tape & reel V8P10he3/86a (1) 0.10 86a 1500 7" diameter plastic tape & reel V8P10he3/87a (1) 0.10 87a 6500 13" diameter plastic tape & reel figure 1. maximum forward current derating curve 10 8 6 4 2 0 0 25 50 75 100 125 150 175 a v erage for w ard c u rrent (a) lead temperat u re (c) t l meas u red at the cathode b and terminal resisti v e or ind u cti v e load figure 2. forward power loss characteristics 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0246 8 10 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = tp/t tp t
document number: 89005 revision: 26-jun-07 www.vishay.com 3 V8P10 vishay general semiconductor new product figure 3. typical instantaneous forward characteristics figure 4. typical reverse characteristics 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 8 090100 t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 10 100 1000 10000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) j u nction to am b ient 0.01 0.1 1 10 100 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
www.vishay.com 4 document number: 89005 revision: 26-jun-07 vishay general semiconductor V8P10 new product package outline dimensions in inches (millimeters) 0.1 8 7 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.1 8 9 (4. 8 0) 0.26 8 (6. 8 0) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.23 8 (6.05) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.0 8 7 (2.20) 0.075 (1.90) 0.1 8 9 (4. 8 0) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) k 21 0.026 (0.65) nom 0.75 nom 0.0 8 4 (2.13) nom 0.155 (3.94) nom mi n . 0.1 8 6 (4.72) mi n . 0.050 (1.27) mi n . 0.055 (1.40) 0.041 (1.04) mi n . conform to jedec to-277a mountin g pad layout to-277a (smpc)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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