elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers,. printers, pcmcia cards, cellular and cordless telephones features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space ? fast switching speed ? high performance trench technology package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol n-ch p-ch unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 8 v i d @ t a = 25c 6.6 -5.2 a continuous drain current 1 i d @ t a = 70c 5.5 -4.2 a pulsed drain current 2 i dm 20 -20 a continuous source current (diode conduction) 1 i s 1.3 -1.3 a p d @ t a = 25c 3.1 3.1 w total power dissipation 1 p d @ t a = 70c 1.3 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 40 c / w maximum junction-to-ambient 1 steady state r ja 110 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 5.8 6.20 h 0.35 0.51 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.50 0.93 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. sop-8 g s s s d d d d
elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static n 0.4 - - v ds = v gs , i d = 250 a gate threshold voltage v gs(th) p 0 - - v v ds = v gs , i d = -250 a n - - 100 v ds = 0v, v gs = 12v gate-body leakage i gss p - - 100 na v ds = 0v, v gs = -12v n - - 1 v ds = 24v, v gs = 0v zero gate voltage drain current i dss p - - -1 a v ds = -24v, v gs = 0v n 20 - - v ds = 5v, v gs = 4.5v on-state drain current 1 i d(on) p -20 - - a v ds = -5v, v gs = -4.5v - - 47 v gs = 4.5v, i d = 6.6a n - - 55 v gs = 2.5v, i d = 6.2a - - 79 v gs = -4.5v, i d = -5.2a drain-source on-resistance 1 r ds(on) p - - 110 m ? v gs = -2.5v, i d = -4.4a n - 25 - v ds = 15v, i d = 6.6a forward transconductance 1 g fs p - 10 - s v ds = -15v, i d = -5.2a dynamic 2 n - 6.3 - total gate charge q g p - 10 - n - 0.9 - gate-source charge q gs p - 2.2 - n - 1.9 - gate-drain charge q gd p - 1.7 - nc n-channel i d = 6.6a, v ds = 15v, v gs = 4.5v p-channel i d = -5.2a, v ds = -15v, v gs = -4.5v switching n - 7.4 - turn-on delay time t d(on) p - 7.6 - n - 4 - rise time t r p - 6.8 - n - 22.2 - turn-off delay time t d(off) p - 33.6 - n - 3.6 - fall time t f p - 23.2 - ns n-channel v dd = 15v, v gs = 4.5v i d = 1a, r gen = 6 ? p-channel v dd = -15v, v gs = -4.5v i d = -1a, r gen = 6 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
elektronische bauelemente SSG4520H n-ch: 6.6 a, 20 v, r ds(on) 47 m ?? p-ch: -5.2 a, -20 v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 27-dec-2010 rev. b page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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