switchmode series npn silicon power transistors the bus98 and bus98a transistors are designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. they are particularly suited for lineoperated switchmode applications such as: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits ? fast turnoff times 60 ns inductive fall time 25 c (typ) 120 ns inductive crossover time 25 c (typ) ? operating temperature range 65 to +200 c ? 100 c performance specified for: reversebiased soa with inductive loads switching times with inductive loads saturation voltages leakage currents (125 c) ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? maximum ratings ????????????????? ????????????????? rating ?????? ?????? symbol ????? ????? bus98 ????? ????? bus98a ???? ???? unit ????????????????? ????????????????? collectoremitter voltage ?????? ?????? v ceo(sus) ????? ????? 400 ????? ????? 450 ???? ???? vdc ????????????????? ????????????????? collectoremitter voltage ?????? ?????? v cev ????? ????? 850 ????? ????? 1000 ???? ???? vdc ????????????????? ????????????????? emitter base voltage ?????? ?????? v eb ????????? ????????? 7 ???? ???? vdc ????????????????? ? ??????????????? ? ????????????????? collector current e continuous e peak (1) e overload ?????? ? ???? ? ?????? i c i cm i oi ????????? ? ??????? ? ????????? 30 60 120 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ????????????????? base current e continuous e peak (1) ?????? ? ???? ? ?????? i b i bm ????????? ? ??????? ? ????????? 10 30 ???? ? ?? ? ???? adc ????????????????? ? ??????????????? ? ????????????????? total power dissipation e t c = 25 c e t c = 100 c derate above 25 c ?????? ? ???? ? ?????? p d ????????? ? ??????? ? ????????? 250 142 1.42 ???? ? ?? ? ???? watts w/ c ????????????????? ? ??????????????? ? ????????????????? operating and storage junction temperature range ?????? ? ???? ? ?????? t j , t stg ????????? ? ??????? ? ????????? 65 to +200 ???? ? ?? ? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ????????????????? ????????????????? characteristic ?????? ?????? symbol ????????? ????????? max ???? ???? unit ????????????????? ? ??????????????? ? ????????????????? thermal resistance, junction to case ?????? ? ???? ? ?????? r q jc ????????? ? ??????? ? ????????? 0.7 ???? ? ?? ? ???? c/w ????????????????? ? ??????????????? ? ????????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ?????? ? ???? ? ?????? t l ????????? ? ??????? ? ????????? 275 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. designer's and switchmode are trademarks of on semiconductor, inc. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 9 1 publication order number: bus98/d bus98 bus98a 30 amperes npn silicon power transistors 400 and 450 volts (bvceo) 250 watts 8501000 v (bvces) case 107 to204aa
bus98 bus98a http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 200 ma, i b = 0) l = 25 mh bus98 bus98a ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 400 450 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc) (v cev = rated value, v be(off) = 1.5 vdc, t c = 125 c) ????? ? ??? ? ? ??? ? ????? i cev ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 0.4 4.0 ??? ? ? ? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v cev , r be = 10 w )t c = 25 c t c = 125 c ????? ? ??? ? ????? i cer ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.0 6.0 ??? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 7 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 0.2 ??? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase breakdown voltage (i e = 100 ma i c = 0) ????? ? ??? ? ????? v ebo ???? ? ?? ? ???? 7.0 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ???? ???? ?????? ?????? see figure 12 ??? ??? ??????????????????? ??????????????????? clamped inductive soa with base reverse biased ????? ????? rbsoa ???? ???? ?????? ?????? see figure 13 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 20 adc, v ce = 5 vdc) bus98 (i c = 16 adc, v ce = 5 v) bus98a ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 8 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 20 adc, i b = 4 adc) bus98 (i c = 30 adc, i b = 8 adc) (i c = 20 adc, i b = 4 adc, t c = 100 c) (i c = 16 adc, i b = 3.2 adc) bus98a (i c = 24 adc, i b = 5 adc) (i c = 16 adc, i b = 3.2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? e e e e e e ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? e e e e e e ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? 1.5 3.5 2.0 1.5 5.0 2.0 ??? ? ? ? ? ? ? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 20 adc, i b = 4 adc) bus98 (i c = 20 adc, i b = 4 adc, t c = 100 c) (i c = 16 adc, i b = 3.2 adc) bus98a (i c = 16 adc, i b = 3.2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 1.6 1.6 1.6 1.6 ??? ? ? ? ? ? ? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 100 khz) ????? ????? c ob ???? ???? e ??? ??? e ???? ???? 700 ??? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? restive load (table 1) ?????? ?????? delay time ?????????????? ?????????????? (v 250 vdc i 20 a ????? ????? t d ???? ???? e ??? ??? 0.1 ???? ???? 0.2 ??? ??? m s ?????? ?????? rise time ?????????????? ?????????????? (v cc = 250 vdc, i c = 20 a, i b1 = 4.0 a, t p = 30 m s, ????? ????? t r ???? ???? e ??? ??? 0.4 ???? ???? 0.7 ??? ??? ?????? ?????? storage time ?????????????? ?????????????? i b1 = 4 . 0 a , t p = 30 m s , duty cycle 2%, v be(off) = 5 v) (for bus98a: i c =16a ib 1 =32a) ????? ????? t s ???? ???? e ??? ??? 1.55 ???? ???? 2.3 ??? ??? ?????? ?????? fall time ?????????????? ?????????????? (f or bu s 98a: i c = 16 a, ib 1 = 3.2 a ) ????? ????? t f ???? ???? e ??? ??? 0.2 ???? ???? 0.4 ??? ??? ????????????????????????????????? ????????????????????????????????? inductive load, clamped (table 1) ?????? ?????? storage time ?????????? ?????????? i c(pk) = 20 a (bus98) i 4a ????? ????? (t =25 c) ????? ????? t sv ???? ???? e ??? ??? 1.55 ???? ???? e ??? ??? m s ?????? ?????? fall time ?????????? ?????????? c( k) () i b1 = 4 a v be(off) = 5 v , ????? ????? (t c = 25 c) ????? ????? t fi ???? ???? e ??? ??? 0.06 ???? ???? e ??? ??? ?????? ?????? storage time ?????????? ?????????? v be(off) = 5 v , v ce(c1) = 250 v) i 16 a (bus98a ????? ????? ????? ????? t sv ???? ???? e ??? ??? 1.8 ???? ???? 2.8 ??? ??? ?????? ?????? crossover time ?????????? ?????????? () i c(pk) = 16 a (bus98a ) ????? ????? (t c = 100 c) ????? ????? t c ???? ???? e ??? ??? 0.3 ???? ???? 0.6 ??? ??? ?????? ?????? fall time ?????????? ?????????? ) lb 1 = 3.2 a) ????? ????? ( c ) ????? ????? t fi ???? ???? e ??? ??? 0.17 ???? ???? 0.35 ??? ??? (1) pulse test: pw = 300 m s, duty cycle 2%.
bus98 bus98a http://onsemi.com 3 dc characteristics v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 50 figure 1. dc current gain i c , collector current (amps) 35710 203050 20 5 3 0.1 figure 2. collector saturation region i c , collector current (amps) 0.3 1 3 10 2 1 0.7 0.5 1 figure 3. collectoremitter saturation voltage i c , collector current (amps) 31020 0.7 0.3 0.1 10 0.1 figure 4. baseemitter voltage i b , base current (amps) 0.1 0.3 0.5 1 2 3 4 5 3 1 0.5 30 h fe , dc current gain v ce = 5 v 1 2 b f = 5 0.3 90% 10% 0.3 t c = 25 c i c = 10 a i c = 15 a i c = 20 a 90% 10% v be , base emitter voltage (volts) t j = 25 c t j = 100 c 1 v r , reverse voltage (volts) 10 100 1000 10k 1k 100 -0.4 figure 5. collector cutoff region v be , base-emitter voltage (volts) 10 2 10 1 10 -1 figure 6. capacitance 10 4 10 , collector current (a) m i c 10 3 10 0 -0.2 0 0.2 0.4 0.6 v ce = 250 v t j = 150 c 125 c 100 c 75 c 25 c reverse forward t j = 25 c c ob c, capacitance (pf) 10 b f = 5 c ib
bus98 bus98a http://onsemi.com 4 i c(pk) v ce or table 1. test conditions for dynamic performance v ceo(sus) rbsoa and inductive switching resistive switching input conditions circuit values test circuits 20 1 0 pw varied to attain i c = 100 ma l coil = 25 mh, v cc = 10 v r coil = 0.7 w l coil = 180 m h r coil = 0.05 w v cc = 20 v v cc = 250 v pulse width = 10 m s 1 in put 2 r coil l coil v cc v clamp 1n4937 or equivalent tut inductive test circuit turnon time i b1 adjusted to obtain the forced h fe desired turnoff time use inductive switching driver as the input to the resistive test circuit. t 1 adjusted to obtain i c t 1 l coil (i c(pk) ) v cc t 2 l coil (i c(pk) ) v clamp test equipment scope e tektronix 475 or equivalent resistive test circuit i c v ce t 1 t f t t f clamped t 2 time 1 2 tut r l v cc output waveforms 2 see above for detailed conditions i b1 1 2 v clamp v clamp = 250 v +10 v +10 v -10 v mje200 mje210 buv20 buv20 1 m f 50 m f 0.1 m f 50 m f -v c1 adjust v c1 to obtain desired i b1 adjust v c2 to obtain desired i b2 t t fi t rv figure 7. inductive switching measurements time figure 8. peakreverse current 20 0 v be(off) , base-emitter voltage (volts) 0 12 345 6 16 12 8 4 i c i b2(pk) , base current (amps) 90% i b1 i c pk v ce(pk) 90% v ce(pk) 90% i c(pk) 10% v ce(pk) 10% i c pk 2% i c b f = 5 i c = 20 a i b t sv t ti t c v ce
bus98 bus98a http://onsemi.com 5 switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefore, separate measurements must be made on each waveform to determine the total switching time. for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v clamp t rv = voltage rise time, 1090% v clamp t fi = current fall time, 9010% i c t ti = current tail, 102% i c t c = crossover time, 10% v clamp to 10% i c an enlarged portion of the inductive switching waveforms is shown in figure 7 to aid in the visual identity of these terms. for the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from an222: p swt = 1/2 v cc i c (t c ) f in general, t rv + t fi t c . however, at lower test currents this relationship may not be valid. as is common with most switching transistors, resistive switching is specified at 25 c and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this a aswitchmodeo transistor are the inductive switching speeds (t c and t sv ) which are guaranteed at 100 c.inductive switching 4 figure 9. storage time, t sv i c , collector current (amps) 2 4 6 8 10 20 30 2 1 0.7 figure 10. crossover and fall times ib 2 /ib 1 2 figure 11. turnoff times versus forced gain b f , forced gain 468 0.5 0.2 0.03 0.8 figure 12. turnoff tm times versus ib 2 /ib 1 i c , collector current (amps) 0.6 0.4 0.2 0.1 3 3 0.5 t, time (s) m b f = 5 t c = 100 c t c = 25 c t, time (s) m 2 4 6 8 10 20 30 b f = 5 t c t fi t c = 100 c t c = 25 c t, time (s) m 2 1 0.3 0.1 0.05 10 t sv t c t fi t c = 25 c i c = 20 a v be(off) = 5 v 12 34 0.5 0.2 0.03 3 t, time (s) m 2 1 0.3 0.1 0.05 5 t c = 25 c i c = 20 a b f = 5 t c = 25 c t c = 100 c t sv t c t fi
bus98 bus98a http://onsemi.com 6 the safe operating area figures shown in figures 12 and 13 are specified for these devices under the test conditions shown. 30 figure 13. forward bias safe operating area v ce , collector-emitter voltage (volts) 2 5 10 20 50 1000 10 1 0.5 0 figure 14. reverse bias safe operating area v ce , collector-emitter voltage (volts) 200 400 600 40 20 100 0.2 t c = 25 c 80 60 20 1000 bus98 v be(off) = 5 v t c = 100 c i c /i b1 5 0 figure 15. power derating t c , case temperature ( c) 40 80 120 40 0 100 power derating factor (%) 80 60 20 200 second breakdown derating 160 thermal derating 800 i c , collector current (amps) bus98a 100 200 500 5 2 0.1 0.05 0.02 t r = 0.7 m s bus98 bus98a limit only for turn on dc 1 ms i c , collector current (amps) safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 13 may be found at any case temperature by using the appropriate curve on figure 15. t j(pk) may be calculated from the data in figure 11. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent conditions during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 14 gives rbsoa characteristics.
bus98 bus98a http://onsemi.com 7 figure 16. thermal response t, time (ms) 1.0 0.01 0.1 0.5 0.2 0.1 0.05 r(t), transient thermal 1.0 10 100 10000 r q jc (t) = r(t) r q jc r q jc = 0.7 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 single pulse 0.1 resistance (normalized) 1000 overload characteristics 200 0 figure 17. rated overload safe operating area (olsoa) v ce , collector-emitter voltage (volts) 160 400 i c , collector current (amps) 100 200 450 500 120 300 t c = 25 c 80 40 t p = 10 m s bus98 bus98a olsoa olsoa applies when maximum collector current is limited and known. a good example is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. if the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. maximum allowable collectoremitter voltage versus collector current is plotted for several pulse widths. (pulse width is defined as the time lag between the fault condition and the removal of base drive.) storage time of the transistor has been factored into the curve. therefore, with bus voltage and maximum collector current known, figure 17 defines the maximum time which can be allowed for fault detection and shutdown of base drive. olsoa is measured in a commonbase circuit (figure 19) which allows precise definition of collectoremitter voltage and collector current. this is the same circuit that is used to measure forwardbias safe operating area. 10 0 figure 18. figure 17. i c = f (dv/dt) dv/dt (kv/ m s) 8 6 8 i c , (amp) 4 24 10 6 2 500 m f 500 v v ee v cc figure 19. overload soa test circuit notes: ? v ce = v cc + v be ? adjust pulsed current source for desired i c , t p r be = 50 w r be = 5 w r be = 1.1 w r be = 0
bus98 bus98a http://onsemi.com 8 package dimensions case 107 issue z to204aa (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bus98/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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