application high speed power switching features ?low on?esistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc ?dc converter avalanche ratings table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss ?0 v drain current i d 40 a drain peak current i d(pulse) * 160 a body?rain diode reverse drain current i dr 40 a avalanche current i ap *** 40 a avalanche energy e ar *** 137 mj channel dissipation pch** 75 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? *** value at tch = 25 ?, rg 50 ? to?20ab 1 2 3 1. gate 2. drain 3. source 1 2 3 2sk1911 silicon n channel mos fet
table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 60 v i d = 10 ma, v gs = 0 voltage gate to source breakdown v (br)gss ?0 v i g = ?00 ?, v ds = 0 voltage gate to source leak current i gss ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.25 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) 0.018 0.022 ? i d = 20 a resistance v gs = 10 v * 0.023 0.028 ? i d = 20 a v gs = 4 v * forward transfer admittance |y fs | 2235 si d = 20 a v ds = 10 v * input capacitance ciss 3530 pf v ds = 10 v output capacitance coss 1480 pf v gs = 0 reverse transfer capacitance crss 300 pf f = 1 mhz turn?n delay time t d(on) 33 ns i d = 20 a rise time t r 155 ns v gs = 10 v turn?ff delay time t d(off) 450 ns r l = 1.5 ? fall time t f 220 ns body?rain diode forward v df 1.2 v i f = 40 a, v gs = 0 voltage body?rain diode reverse t rr 120 ns i f = 40 a, v gs = 0, recovery time dif / dt = 50 a / ? * pulse test 2sk1911
75 50 25 50 100 150 case temperature tc (?) power vs. temperature derating channel dissipation pch (w) 0 drain current i (a) drain to source voltage v (v) ds d 1 ms pw = 10 ms (1 shot) 100 s 10 s operation in this area is limited by r (on) ds maximum safe operation area 0.1 0.3 1 3 10 30 100 ta = 25? dc operation (tc = 25?) 500 300 30 10 3 1 100 0.5 typical output characteristics 100 80 60 40 20 drain current i (a) d gs v = 2.5 v drain to source voltage v (v) ds 10 v 5 v 4 v 3.5 v 246810 pulse test 4.5 v 3 v 0 typical transfer characteristics ds v = 10 v pulse test drain current i ( a ) tc = ?5? d 100 80 60 40 20 1 23 45 gate to source voltage v (v) gs 25? 75? 0 2sk1911
pulse test 0 2 4 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v (on) (v) ds 2.0 1.6 1.2 0.8 0.4 i = 10 a d 20 a 50 a 6810 static drain to source on state resistance vs. drain current static drain to source on state resistance r (on) ( ) ds drain current i (a) d v = 4 v gs ? 10 v 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.005 2 0.01 pulse test static drain to source on state resistance vs. temperature static drain to source on state resistance r (on) ( ) ds ? 0.05 0.04 0.03 0.02 0.01 i = 50 a d ?0 0 80 120 case temperature tc (?) 40 50 a 10 a, 20 a v = 4 v 10 v 160 gs 10 a, 20 a 0 pulse test forward transfer admittance vs. drain current forward transfer admittance | yfs | (s) drain current i (a) d tc = 25? 75? 100 50 20 10 5 2 1 ?5? pulse test 0.5 1 2 5 10 20 50 v = 10v ds 2sk1911
body to drain diode reverse recovery time reverse recovery time t (ns) reverse drain current i (a) dr di/dt = 50 a/ s, v = 0 ta = 25? 500 1 2 5 10 20 50 100 gs rr 200 100 50 20 10 5 typical capacitance vs. drain to source voltage capacitance c (pf) 10000 1000 100 10 ciss coss crss v = 0 f = 1 mhz gs 01020304050 drain to source voltage v (v) ds dynamic input characteristics 100 80 60 40 20 drain to source voltage v (v) gate to source voltage v (v) ds gs 20 16 12 8 4 0 i = 40 a d v = 50 v 25 v 10 v dd 0 40 80 120 160 200 v = 50 v 25 v 10 v dd gate charge qg (nc) v ds v gs switching characteristics switching time t (ns) drain current i (a) d t (on) t t t (off) 1000 500 200 100 50 20 10 0.5 1 2 5 10 20 50 v = 10 v, v 30 v pw = 2 s, duty 1% gs dd = : < = d f r d 2sk1911
reverse drain current vs. source to drain voltage 100 80 60 40 20 reverse drain current i (a) dr sd 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) gs pulse test v = 10 v 5 v 0 0, ? v repetive avalanche energy e (mj) ar maximum avalanche energy vs. channel temperature derating i = 40 a v = 25 v duty < 0.1% rg 50 ap dd > = ? channel temperature tch (?) 200 160 120 50 75 100 125 150 25 80 40 0 d. u. t rg i monitor ap v monitor ds v dd 50 ? vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 avalanche test circuit and waveform 2sk1911
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