tlm832d case central semiconductor corp. tm r2 (27-april 2006) marking code: cfa CTLSH1-40M832D surface mount dual, high current, low v f silicon schottky diodes maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 1.0 a peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a power dissipation p d 1.65 w* operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 75.8 c/w* electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r = 5v 10 a i r v r = 8v 20 a i r v r = 15v 50 a bv r i r = 100 a40 v v f i f = 10ma 0.29 v v f i f = 100ma 0.36 v v f i f = 500ma 0.45 v v f i f = 1.0a 0.55 v c j v r = 4.0v, f=1.0mhz 50 pf description: the central semiconductor CTLSH1-40M832D dual, isolated, low v f schottky diodes are designed for applications where small size and operational effciency are the prime requirements. with a maximum power dissipation of 1.65w, and a very small package footprint (approximately equal to the sot-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. features: ? dual chip device ? high current (i f =1.0a) ? low forward voltage drop (v f =0.55v max @ 1.0a) ? high thermal efficiency ? small tlm 3x2mm case applications: ? dc/dc converters ? reverse battery protection ? battery powered portable equipment *fr-4 epoxy pcb with copper mounting pad area of 54mm 2 bottom view top view
central semiconductor corp. tm tlm832d case - mechanical outline r2 (27-april 2006) lead code: 1) anode d1 2) anode d1 3) anode d2 4) anode d2 5) cathode d2 6) cathode d2 7) cathode d1 8) cathode d1 marking code: cfa CTLSH1-40M832D surface mount dual, high current, low v f silicon schottky diodes suggested mounting pad layout for maximum power dissipation (dimensions in mm) for standard mounting refer to tlm832d package details
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