maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 200 ma peak repetitive forward current i frm 350 ma forward surge current, tp=10ms i fsm 1.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =20v 11 50 a bv r i r =100 a4053v v f i f =10ma 0.24 0.325 v v f i f =100ma 0.35 0.4 v v f i f =200ma 0.42 0.5 v c t v r =4.0v, f=1.0 mhz 8.5 10 pf t rr i f =i r =10ma, i rr =1.0ma, r l =100 ? 4.0 5.0 ns CMKSH2-4LR surface mount ultramini tm triple isolated silicon low v f schottky diodes sot-363 case central semiconductor corp. tm r0 (13-january 2005) description: the central semiconductor CMKSH2-4LR type contains three (3) isolated silicon low v f schottky diodes, epoxy molded in a sot-363 surface mount package. this ultramini tm device has been designed for switching applications requiring a low forward voltage drop. marking code: chtl
central semiconductor corp. tm sot-363 case - mechanical outline CMKSH2-4LR surface mount ultramini tm triple isolated silicon low v f schottky diodes r0 (13-january 2005) lead code: 1) cathode d1 2) cathode d2 3) cathode d3 4) anode d3 5) anode d2 6) anode d1 marking code: chtl
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