slotted photointerrupter mit-5A11B description package dimensions the mit-5A11B consists of a gallium arsenide in- frared emitting diode and a npn silicon phototran- sistor built in a black plastic housing . it is a transmissive subminiature photointerrupter. features l non -contact switching l for- direct pc board l dual - in - line socket mounting l fast switching speed l choice of mounting configuration. note 1. tolerance is 0.25 mm (.006") unless otherwise noted. absolute maximum ratings @t a =25 o c parameter symbol maximum rating unit continuous forward current i f 50 ma input reverse voltage v r 5 v power dissipation p ad 75 mw collector-emitter breakdown voltage v (br)ceo 30 v output emitter-collector breakdown voltage v (br)eco 5 v collector power dissipation p c 75 mw total power dissipation p tot mw operating temperature range t opr storage temperature range t stg 04/01/2002 -25 o c to + 85 o c -40 o c to + 100 o c 100 unity opto technology co., ltd. unit: mm ( inches ) f 1.50 (.059) 4.00 (.157) 5.00 (.197) 6.00 (.236) 2.54 (.100) 9.50 (.370) 0.50 (.020) 13.00 (.512) 11.00 (.433) 7.00 (.276) 6.00 (.236) 1.50 (.059) 0.50 (.020) 1.58 (.062) 2.85 (.112) 7.27 (.286) 1.38 (.054) 2.00 (.079) optical line 1 2 4 3
mit-5A11B optical-electrical characteristics @t a =25 o c parameter symbol min. typ. max. unit. test conditions input forward voltage v f 1.2 1.4 v i f =20ma reverse current i r 10 m a v r =5v output collector dark current iceo 100 na vce =10v v ce(sat) 0.4 v ic=0.1ma,ee=0.1mw/cm 2 collector current ic (on) 1 10 ma i f =20ma, vce =5v transfer cha- response time (rise) t r 20 100 m s ic=100 m a, vce =5v racteristics response time (fall) t f 20 100 m s r l =1k, d =1mm typical optical-electrical characteristic curves 04/01/2002 collector emitter saturation voltage unity opto technology co., ltd. 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 5 10 15 20 25 30 0 20 40 60 80 100 120 -25 0 25 50 75 100 ambient temperature t a ( o c ) fig.2 power dissipation vs ambient temperature power dissipation (mw) p tot p d , p c 0 20 40 60 80 100 120 -25 0 25 50 75 100 collector current ic (ma) forward current i f (ma) fig.4 collector current vs forward current 0 10 20 30 40 50 60 -25 0 25 50 75 100 ambient temperature t a fig.1 forward current vs . ambient temperature relative collector current (%) ambient temperature t a ( o c) fig.6 relative collector current vs . t a forward current i f (ma) forward current i f (ma) forward voltage v f (v) fig.3 forward current vs forward voltage 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 2 4 6 8 10 12 collector-emitter voltage vce (v) fig.5 collector current vs. vce ta=25 j collector current ic ( m a) i f =15ma 10ma 4ma 20ma 0 20 40 60 80 100 0.8 1.2 1.6 2.0 2.4 2.8 vce=2v ta=25 j
mit-5A11B typical optical-electrical characteristic curves response time measurement circuit sensing position characteristics (typical) (center of optical axis) 04/01/2002 ambient temperature t a ( o c ) fig.7 collector dark current vs. ambient temperature load resistance r t (k w ) fig.8 response time vs. load resistance 0 25 50 75 100 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 -6 10 -7 10 -8 10 -9 10 -10 v ce =20v response time ( m s) collector dark current i ceo unity opto technology co., ltd. 0 20 40 60 80 100 700 800 900 1000 1100 1200 relative sensitivity (%) wavelength (nm) fig.9 spectral sensitivity (detecting side) input output 90 % 10 % tr tf t t 0 50 100 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) relative light current i l (%) i f =20ma v ce =5v ta=25 j i f =20ma v ce =5v ta=25 j distance d (mm) y x 0 + 0 + y x v ce =2v i c =100ma ta=25 j ta=25 j il input v cc output vr
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