data sheet 1 05.99 sipmos ? small-signal transistor ? n channel ? enhancement mode ? logic level ? v gs(th) = 0.8...2.0v pin 1 pin 2 pin 3 pin 4 g d s d type v ds i d r ds(on) package marking bsp 295 50 v 1.8 a 0.3 w sot-223 bsp 295 type ordering code tape and reel information bsp 295 q67000-s066 e6327 maximum ratings parameter symbol values unit drain source voltage v ds 50 v drain-gate voltage r gs = 20 k w v dgr 50 gate source voltage v gs 20 esd sensitivity (hbm) as per mil-std 883 class 1 continuous drain current t a = 34 ?c i d 1.8 a dc drain current, pulsed t a = 25 ?c i dpuls 7.2 power dissipation t a = 25 ?c p tot 1.8 w bsp 295
bsp 295 data sheet 2 05.99 maximum ratings parameter symbol values unit chip or operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air r thja 70 k/w therminal resistance, junction-soldering point 1) r thjs 10 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 1) transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm 2 copper area for drain connection electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 ?c v (br)dss 50 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 0.8 1.4 2 zero gate voltage drain current v ds = 50 v, v gs = 0 v, t j = 25 ?c v ds = 50 v, v gs = 0 v, t j = 125 ?c v ds = 30 v, v gs = 0 v, t j = 25 ?c i dss - - - - 8 0.1 100 50 1 a na gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-state resistance v gs = 10 v, i d = 1.8 a v gs = 4.5 v, i d = 1.8 a r ds(on) - - 0.45 0.25 0.5 0.3 w
bsp 295 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 1.7 a g fs 0.5 1.7 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 320 425 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 110 170 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 50 75 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 0.29 a r gs = 50 w t d(on) - 8 12 ns rise time v dd = 30 v, v gs = 10 v, i d = 0.29 a r gs = 50 w t r - 20 30 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 0.29 a r gs = 50 w t d(off) - 120 160 fall time v dd = 30 v, v gs = 10 v, i d = 0.29 a r gs = 50 w t f - 85 115
bsp 295 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 ?c i s - - 1.8 a inverse diode direct current,pulsed t a = 25 ?c i sm - - 7.2 inverse diode forward voltage v gs = 0 v, i f = 3.6 a, t j = 25 ?c v sd - 1.1 1.5 v
bsp 295 data sheet 5 05.99 power dissipation p tot = | ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 2.0 p tot drain current i d = | ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 ?c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 a 1.9 i d safe operating area i d =f( v ds ) parameter : d = 0, t c =25?c transient thermal impedance z th ja = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thjc 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
bsp 295 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 ?c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 a 4.0 i d v gs [v] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l p tot = 2w l 10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 ?c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 a 3.8 i d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 w 0.9 r ds (on) v gs [v] = a 2.0 v gs [v] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 a 4.5 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, 0.0 0.5 1.0 1.5 2.0 2.5 3.0 a 4.0 i d 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 s 2.2 g fs
bsp 295 data sheet 7 05.99 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 1.8 a, v gs = 10 v -60 -20 20 60 100 ?c 160 t j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 w 0.75 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds 0 10 1 10 2 10 3 10 pf c c rss c oss c iss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -2 10 -1 10 0 10 1 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
bsp 295 data sheet 8 05.99 drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j 45 46 47 48 49 50 51 52 53 54 55 56 57 58 v 60 v (br)dss safe operating area i d =f( v ds ) parameter : d = 0.01, t c =25?c
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