dimensions inches millimeters a 1.54 max. 39.2 max. b 1.181 0.008 30.0 0.2 c 0.89 max. 22.5 max. d 0.91 max. 23 max. e 0.80 max. 20.2 max. f 0.40 max. 11 max. g 0.165 dia. 4.2 dia. h 0.10 max. 2.6 max. description: a triac is a solid state silicon ac switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. features: h glass passivation h isolated to-3 mounting flange h quick disconnect terminals h 2200 v rms isolation voltage h selected for inductive loads applications: h ac switch h heating h motor controls h lighting ordering information: example: select the complete nine or ten digit part number you desire from the table - i.e. BCR30GM-12 is a 600 volt, 30 ampere triac. v drm inductive type volts code load* bcr30gm 600 -12 l *for inductive load, add l. powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (412) 925-7272 isolated triac 30 ampere/600 volts bcr30gm outline drawing (conforms to jedec to-92) t-91 a e g - dia. .250 faston .187 faston b a d f c h t1 terminal t2 terminal gate terminal a a outline drawing connection diagram
absolute maxim um ratings, t a = 25 c unless other wise specified ratings symbol BCR30GM-12 units on-state current, t a = 60 c i t(rms) 30 amperes repetitiv e p eak off-state v oltage v drm 600 v olts non-repetitiv e p eak off-state v oltage (gate open) v dsm 720 v olts non-repetitiv e p eak off-state v oltage , one cycle (60 hz) i tsm 300 amperes i 2 t f or fusing, t = 8.3 msec i 2 t 375 a 2 sec p eak gate p o w er dissipation, 20 m sec p gm 5 w atts a v er age gate p o w er dissipation p g(a vg) 0.5 w atts p eak gate current i gm 2 amperes p eak gate v oltage v gm 10 v olts stor age t emper ature t stg -40 to 125 c oper ating t emper ature t j -40 to 125 c isolation v oltage v iso 2200 v olts w eight C 26 gr ams electrical and thermal characteristics, t j = 25 c unless other wise specified t est conditions (t rigger mode) bcr30gm characteristics symbol v d r l t j min. t yp. max. units gate p ar ameters dc gate t r igger current mt2+ gate+ i fgt i 6v 6 v 25 c C C 50 ma mt2+ gateC i rgt i 6v 6 v 25 c C C 50 ma mt2C gateC i rgt iii 6v 6 v 25 c C C 50 ma dc gate t r igger v oltage mt2+ gate+ v fgt i 6v 6 v 25 c C C 2.5 v olts mt2+ gateC v rgt i 6v 6 v 25 c C C 2.5 v olts mt2C gateC v rgt iii 6v 6 v 25 c C C 2.5 v olts dc gate non-tr igger v oltage all v gd 1/2 v drm C 125 c 0.2 C C v olts characteristics symbol t est conditions min. t yp. max. units ther mal resistance , j unction-to-base r th(j-b) C C C 1.6 c/w v oltage C bloc king state i drm gate open circuited, C C 3 ma repetitiv e off-state current v d = v drm , t j = 125 c current C conducting state v tm t c = 25 c , C C 1.6 v olts p eak on-state v oltage i tm = 45a cr itical rate-of-rise of comm utating (dv/dt) c C C C C v/ m s off-state v oltage (comm utating dv/dt) s (switching) p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr30gm isolated t riac 30 ampere/600 v olts t-92
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr30gm isolated t riac 30 ampere/600 v olts 0.4 1.2 2.0 2.8 3.6 4.4 maximum on-state characteristics instantaneous on-state current, i t , (amperes) instantaneous on-state voltage, v t , (volts) 10 0 10 1 10 2 10 3 t c = 25 o c 0 transient thermal impedance characteristics cycles at 60 hz transient thermal impedance, z th(j-c) , ( c/watt) 10 -1 10 0 10 2 10 3 10 1 10 2 0.4 0.8 1.2 1.6 2.0 10 -1 10 2 10 1 10 0 gate characteristics (i, ii, iii) gate current, i g , (ma) gate voltage, v g , (volts) 10 2 10 1 10 3 10 4 v gd = 0.2v v gm = 10v v gt = 2.5v i gm = 2a p gm = 5w p g(avg) = 0.5w i rgt i, i fgt i, i rgt iii 0 100 200 300 400 500 maximum surge current following rated load conditions cycles at 60 hz maximum peak surge current, i tsm , (amperes) 10 0 10 1 10 2 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. rms on-state current rms on-state current, i t(rms) , (amperes) ambient temperature, t a , ( c) 0 10 20 30 40 resistive, inductive loads natural convection 100 x 100 x t 3.0 120 x 120 x t 3.0 160 x 160 x t 4.0 fin: a plate painted black with grease curves apply regardless of the conduction angle 0 10 20 30 40 50 maximum on-state power dissipation rms on-state current, i t(rms) , (amperes) maximum power dissipation, (watts) 0 10 20 30 40 50 360 conduction resistive, inductive loads gate trigger voltage vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger voltage, (t c) gate trigger voltage, (25 c) x 100% -60 -20 20 60 100 140 -40 0 40 80 120 10 1 10 2 10 3 0 20 40 60 80 100 120 140 160 allowable base temperature vs. rms on-state current rms on-state current, i t(rms) , (amperes) base temperature, t b , ( c) 0 10 20 30 40 for ac control this graph nearly applies regardless of the conduction angle conduction resistive, inductive loads 360 gate trigger current vs. junction temperature (typical) junction temperature, t j , ( c) gate trigger voltage, (t c) gate trigger voltage, (25 c) x 100% -60 -20 20 60 100 140 -40 0 40 80 120 10 1 10 2 10 3 t-93
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 bcr30gm isolated t riac 30 ampere/600 v olts breakover voltage vs. rate of rise of off-state voltage (typical) rate of rise of off-state voltage, dv/dt, (v/ m s) 0 20 40 60 80 100 120 140 160 breakover voltage, (dv/dt = x v/ m s) breakover voltage, (dv/dt = 1v/ m s) x 100% 10 2 10 1 10 3 10 4 t j = 125 c i quadrant iii quadrant repetitive peak off-state current vs. junction temperature (typical) junction temperature, t j , ( c) -60 -20 20 60 100 140 -40 0 40 80 120 10 2 10 3 10 4 10 5 repetitive peak off-state current, (t c) repetitive peak off-state current, (25 c) x 100% gate trigger current vs. gate current pulse width (typical) gate current pulse width, t w , ( m s) gate trigger current, (t w ) gate trigger current, (dc) x 100% 10 1 10 2 10 3 t j = 25 c 10 0 10 1 10 2 i fgt i i rgt iii i rgt i holding current vs. junction temperature (typical) junction temperature, t j , ( c) holding current, i h , (ma) -60 -20 20 60 100 140 -40 0 40 80 120 10 1 10 2 10 3 breakover voltage vs. junction temperature (typical) junction temperature, t j , ( c) -60 -20 20 60 100 140 -40 0 40 80 120 0 20 40 60 80 100 120 140 160 breakover voltage, (t c) breakover voltage, (25 c) x 100% commutation characteristics (typical) rate of decay of on-state commutating current, (a/ms) 10 1 10 2 10 3 10 0 10 1 10 2 critical rate of rise of off-state commutating voltage, (v/ m s) t j = 125 o c i t = 4 a t = 500 m s v d = 200v f = 3 hz minimum charac- teristics value v d t (dv/dt) c voltage waveform current waveform i t t (di/dt) c t i quadrant iii quadrant gate trigger characteristics test circuits test procedure i test procedure ii r g 6v 6 v a v r g 6v 6 v test procedure iii a v r g 6v 6 v a v t-94 commutating dv/dt, (dv/dt) c commutating v oltage & d par t v drm (v/ m sec) cur r ent w avefor m number (v olts) minimum t est condition (inductive load) BCR30GM-12l 400 20 tj = 125 c , rate of deca y on-state comm utating current (di/dt) c = -016a/msec , p eak off-state v oltage v d = 400v supply voltage (di / dt) c (dv / dt) c v d v d main current main voltage t t t
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