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  2SB1707 transistors 1/2 low frequency amplifier 2SB1707 ! ! ! ! application low frequency amplifier driver ! ! ! ! features 1) a collector current is large. (4a) 2) v ce(sat) ? 250mv at i c = ? 2a / i b = ? 40ma ! ! ! ! external dimensions (units : mm) ( 2 ) ( 1 ) ( 3 ) 0 0.1 0.16 0.85 1.0max 0.7 2.9 2.8 1.9 1.6 0.95 0.95 0.4 0.3 0.6 rohm : tsmt3 (1) emitter (2) base (3) collector each lead has same dimensions abbreviated symbol : yw ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits ? 15 ? 12 ? 6 ? 4 500 150 ? 55~ + 150 ? 8 ? unit v v v a a mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? single pulse, p w = 1ms ! ! ! ! packaging specifications 2SB1707 t146 3000 type package code basic ordering unit (pieces) taping ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v cb = ? 10v, i e = 0a, f = 1mhz f t ? 250 ? mhz v ce = ? 2v, i e = 200ma, f = 100mhz bv cbo ? 15 ?? v i c = ? 10 a bv ceo ? 12 ?? v i c = ? 1ma bv ebo ? 6 ?? v i e = ? 10 a i cbo ?? ? 100 na v cb = ? 15v i ebo ?? ? 100 na v eb = ? 6v v ce(sat) ?? 150 ? 250 mv i c = ? 2a, i b = ? 40ma h fe 270 ? 680 ? v ce = ? 2v, i c = ? 200ma cob ? 60 ? pf ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency collector output capacitance ? pulsed
2SB1707 transistors 2/2 ! ! ! ! electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 100 1000 dc current gain : h fe v ce = ? 2v pulsed ta = 25 c ta = ? 40 c ta = 125 c fig.1 dc current gain vs. collector current 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 i c /i b = 20/1 pulsed collector current : i c (a) collector saturation voltage : v ce (sat) (v) ta = 25 c ta = ? 40 c ta = 125 c fig.2 collector-emitter saturation voltage vs. collector current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 collector current : i c (a) base saturation voltage : v be (sat) (v) i c /i b = 20/1 pulsed ta = 25 c ta = 125 c ta = ? 40 c fig.3 base-emitter saturation voltage vs. collector current 0.1 1 10 base to emitter current : v be (v) 0.001 0.01 0.1 1 10 collector current : i c (a) fig.4 grounded emitter propagation characteristics v ce = ? 2v pulsed ta = 25 c ta = ? 40 c ta = 125 c 0.001 0.01 0.1 1 10 100 1 10 100 1000 f = 1mhz i c = 0a ta = 25 c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob emitter to base voltage : v eb (v) collector to base voltage : v cb (v) fig.5 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 0.01 0.1 1 10 emitter current : i e (a) 10 100 1000 transition frequency : f t (mhz) ta = 25 c v ce = ? 2v f = 100mhz fig.6 gain bandwidth product vs. emitter current 0.01 0.1 1 10 collector current : i c (a) 1 10 100 1000 10000 ta = 25 c v ce = ? 5v i c /i b = 20/1 pulsed switching time : (ns) tstg tdon tr tf fig.7 switching time


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