CS89M cs89n 0.8 amp scr 600 thru 800 volts sot-89 case central semiconductor corp. tm r0 (10-may 2004) description: the central semiconductor CS89M series type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol CS89M cs89n units peak repetitive off-state voltage v drm, v rrm 600 800 v rms on-state current (t c =60c) i t(rms) 0.8 a peak one cycle surge (t=10ms) i tsm 10 a i 2 t value for fusing (t=10ms) i 2 t 0.24 a 2 s peak gate power (tp=10s) p gm 2.0 w average gate power dissipation p g(av) 0.1 w peak gate current (tp=10s) i gm 1.0 a peak gate voltage (tp=10s) v gm 8.0 v storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance ja 104 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1k ? 1.0 a i drm, i rrm rated v drm , v rrm, r gk =1k ?, t c =125c 100 a i gt v d =12v 20 200 a i h r gk =1k ? 0.25 5.0 ma v gt v d =12v 0.61 0.8 v v tm i tm =1.0a, tp=380s 1.2 1.7 v dv/dt v d = 2 / 3 v drm, r gk =1k ?, t c =125c 25 v/s
min max min max a 0.055 0.067 1.40 1.70 b c 0.014 0.018 0.35 0.46 d 0.173 0.185 4.40 4.70 e 0.064 0.074 1.62 1.87 f 0.146 0.177 3.70 4.50 g 0.090 0.106 2.29 2.70 h 0.028 0.051 0.70 1.30 j 0.014 0.019 0.36 0.48 k 0.017 0.023 0.44 0.58 l m sot-89 (rev: r4) dimensions symbol inches millimeters 4 4 0.059 0.118 1.50 3.00 central semiconductor corp. tm sot-89 case - mechanical outline CS89M cs89n 0.8 amp scr 600 thru 800 volts r0 (10-may 2004) lead code: 1) gate 2) anode 3) cathode marking code: full part number
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