1/9 january 2002 . stb100nf03l-03 n-channel 30v - 0.0026 w - 100a d 2 pak stripfet ? ii power mosfet n typical r ds (on) = 0.0026 w n low threshold drive n 100% avalanche tested n logic level device n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix at4o) description this power mosfet is the latest development of stmicroelectronis unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high switching speed n motor control, audio amplifiers n dc-dc & dc-ac converters n solenoid and relay drivers type v dss r ds(on) i d stb100nf03l-03 30 v <0.0032 w 100 a 1 3 d 2 pak to-263 (suffix at4o) absolute maximum ratings ( ? ) pulse width limit ed by safe operating area (1) current limited by package (2) starting t j =25 o c, i ar = 50a, v dd = 50v symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 15 v i d (1) drain current (continuos) at t c =25 c 100 a i d (1) drain current (continuos) at t c = 100 c 100 a i dm ( ? ) drain current (pulsed) 400 a p tot total dissipation at t c =25 c 300 w derating factor 2 w/ c e as (2) single pulse avalanche energy 1.4 j t stg storage temperature -60 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
stb100nf03l-03 2/9 thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 15v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs =10v i d =50a v gs = 4.5 v i d =50a 0.0026 0.0032 0.0032 0.0045 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max i d =10 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs =0 6200 1720 300 pf pf pf
3/9 stb100nf03l-03 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =15v i d =50a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 35 315 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v i d =100av gs =5v 88 22.5 36 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =20v i d =50a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 115 95 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp =24v i d = 100 a r g = 4.7 w v gs = 4.5 v (inductive load, figure 5) 110 55 100 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 100 400 a a v sd (*) forward on voltage i sd = 100 a v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 100 a di/dt = 100a/ m s v dd =20v t j = 150 c (see test circuit, figure 5) 75 150 4 ns nc a thermal impedance electrical characteristics (continued) safe operating area
stb100nf03l-03 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 stb100nf03l-03 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature ..
stb100nf03l-03 6/9 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/9 stb100nf03l-03 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 8 0 8 d 2 pak mechanical data
stb100nf03l-03 8/9 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ot4o)* d 2 pak footprint tape mechanical data
9/9 stb100nf03l-03 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://w ww.st.com
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