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data sheet 1 of 15 rev. 04, 2010-04-16 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTMA210152M confidential, limited internal distribution description the PTMA210152M is a wideband, matched, 15-watt, 2-stage ldmo s integrated amplifier intended for wideband driver applications in the 1800 to 2200 mhz band. this device is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. PTMA210152M package pg-dso-20-63 wideband rf ldmos integrated power amplifier 15 w, 1800 ? 2200 mhz features ? designed for wide rf bandwidth and low memory effects ? broadband input on-chip matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v, 7 w avg. - gain = 28.5 db - efficiency = 33 % - imd3 = ?32 dbc ? typical cw performance at 2140 mhz, 28 v - output power at p?1db ~ 20 w - efficiency > 49% ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f ? capable of handling 10:1 vswr @ 28 v, 15 w (cw) output power ? thermally-enhanced rohs-compliant package *see infineon distributor for future availability. rf characteristics two-carrier wcdma measurements (not subject to production test?verified by design/characterization in infineon test fixture) v ds = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, ? = 2110 ? 2170 mhz, p out = 7 w average characteristic p out conditions symbol min typ max unit gain g ps ? 28.5 ? db power added efficiency ?33 ? % input return loss irl ? ?14 ? db adjacent channel power ratio acpr ? ?36 ? dbc intermodulation distortion imd3 ? ?32 ? dbc table continued next page broadband performance v dd = 28 v, i dq1 = 80 ma, i dq1 = 160 ma fixture tuned for 2110 - 2170 mhz 12 14 16 18 20 22 24 26 28 30 32 1500 1700 1900 2100 2300 2500 frequency (mhz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 return loss (db) gain return loss
data sheet 2 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution *see infineon distributor for future availability. rf characteristics (cont.) two-carrier wcdma measurements (cont.) v ds = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, ? = 2110 ? 2170 mhz, p out = 7 w average characteristic symbol min typ max unit spurs load 3:1 ? ? ?60 ? dbc gain flatness g ? 0.43 ? db two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, p out = 15 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 27.5 28.5 30 db drain efficiency d 33 34 ? % intermodulation distortion imd ? ?33 ?30 dbc input return loss ? ?14 ?10 db dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance stage 1 v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.6 ? stage 2 v gs = 10 v, v ds = 0.1 v r ds(on) ? 3.5 ? operating gate voltage v ds = 28 v , i dq = ccc ma v gs 2 2.5 3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a
data sheet 3 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c input power p in 15 dbm total device dissipation p d 70 w above 25c derate by 0.4 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 15 w cw) stage 1 r jc 10.7 c/w stage 2 r jc 2.9 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version package outline package description shipping PTMA210152M v1 pg-dso-20-63 thermally-enhanced surface-mount tape
data sheet 4 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution *see infineon distributor for future availability. cw performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma for 2110, 2140, 2170 mhz 20 21 22 23 24 25 26 27 28 29 30 29 31 33 35 37 39 41 43 45 output power (dbm) gain (db) 5 10 15 20 25 30 35 40 45 50 55 gain efficiency 2110 mhz 2140 mhz 2170 mhz power added efficiency (%) cw performance v dd1 = 28 v, v dd2 = 32, 28, 24 v, i dq1 = 80 ma, i dq2 = 160 ma, ? = 2140 mhz 20 21 22 23 24 25 26 27 28 29 30 29 31 33 35 37 39 41 43 45 output power (dbm) gain (db) gain 24 v 28 v 32 v wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz 10 15 20 25 30 35 40 45 30 32 34 36 38 40 output power (dbm) -60 -55 -50 -45 -40 -35 -30 -25 acpr (dbc) efficienc y ac pr power added efficiency (%) 2110 mhz 2140 mhz 2170 mhz two-tone drive-up v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma for 2110, 2140, 2170 mhz 5 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 44 output power, avg. ( dbm ) -75 -65 -55 -45 -35 -25 -15 -5 5 imd3 (dbc) efficienc y imd3 2110 mhz 2140 mhz 2170 mhz power added efficiency (%) typical performance at 2140 mhz (data taken in a production test fixture)
data sheet 5 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution two-carrier wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 output power (dbm) -60 -55 -50 -45 -40 -35 -30 -25 imd3 (dbc) efficienc y imd3 power added efficiency (%) 2110 mhz 2140 mhz 2170 mhz typical performance at 2140 mhz (cont.) two-carrier wcdma performance v dd = 28 v, i dq1 = 80 ma, i dq2 = 160 ma, series show 2140 mhz at various temperatures 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 output power (dbm) -60 -55 -50 -45 -40 -35 -30 -25 acpr (dbc) efficienc y a cpr power added efficiency (%) ? 25 c 25 c 90 c six-carrier td-scdma performance v dd = 28 v, i dq1 = 80 m a, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 output power (dbm) -60 -55 -50 -45 -40 -35 -30 -25 efficienc y ac pr power added efficiency (%) acpr (dbc) 2110 mhz 2140 mhz 2170 mhz two-carrier wcdma performance v dd = 28 v, i dq1 = 80 m a, i dq2 = 160 ma, series show 2110, 2140, 2170 mhz 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 output power (dbm) -60 -55 -50 -45 -40 -35 -30 -25 acpr (dbc) efficienc y ac pr power added efficiency (%) 2110 mhz 2140 mhz 2170 mhz
data sheet 6 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution gate - source voltage vs. temperature v dd = 28, i dq1 = 80 ma, i dq2 = 160 ma 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -30 -10 10 30 50 70 90 temperature (oc) v g1 v g2 normalized gate - source voltage typical performance at 2140 mhz (cont.) broadband circuit impedance, 2140 mhz z load d s in 0.1 0.3 0.2 0 . 1 0 . 1 0 . 2 - w a v e l e n g t h s t o w a r < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 2170 mhz 2110 mhz z load z 0 = 50 frequency z load w mhz r jx 2110 1.89 ?5.84 2114 1.87 ?5.80 2118 1.85 ?5.76 2122 1.84 ?5.72 2126 1.82 ?5.67 2130 1.80 ?5.63 2134 1.78 ?5.60 2138 1.77 ?5.55 2142 1.75 ?5.51 2146 1.73 ?5.47 2150 1.71 ?5.42 2154 1.70 ?5.38 2158 1.68 ?5.34 2162 1.66 ?5.30 2166 1.65 ?5.25 2170 1.63 ?5.21
data sheet 7 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution reference circuit, 2140 mhz reference circuit schematic for ? = 2140 mhz circuit assembly information dut PTMA210152M ldmos ic pcb ltn/PTMA210152M 0.76 mm [.030"] thick, r = 3.43 rogers ro4350 1 oz. copper microstrip electrical characteristics at 2140 mhz dimensions: l x w (mm) dimensions: l x w (in.) ? 1 0.228 , 50 17.48 x 1.70 0.688 x 0.067 ? 2 0.125 , 50 9.40 x 1.70 0.370 x 0.067 ? 3 0.054 , 10 4.09 x 12.83 0.161 x 0.505 ? 4 0.340 , 61 25.91 x 1.19 1.020 x 0.047 ? 5 0.005 , 71 0.38 x 0.89 0.015 x 0.035 ? 6 0.005 , 71 0.38 x 0.89 0.015 x 0.035 ? 7 0.100 , 34 7.47 x 3.00 0.294 x 0.118 ? 8 0.271 , 44 20.40 x 2.11 0.803 x 0.083 ? 9 0.066 , 50 4.95 x 1.70 0.195 x 0.067 a210152 m _bd_7- 23- 09 j2 j1 c18 10 f c16 0.1 f c15 12 pf c1 7 1 f c1 9 100 f 50v v d2 ? 3 ? 4 c22 12pf ? 7 ? 8 ? 9 ptma210152 m 516 10 9 7 8 6 11 12 13 14 15 dut 1 3 4 2 17 18 19 20 c1 4 12pf c10 12pf c12 1 f c8 1 f c7 10 f c11 10 f c9 0. 1 f c13 0.1 f ? 1 v d1 c1 100 f 50v c2 10 f c3 1 f c6 0.5pf ? 2 c4 0.1 f c5 12pf r1 0 q1 v g1 r3 r2 0 q2 r4 g2 v c2 0 2.2pf c21 1.0pf ? 5 ? 6 ? ?
data sheet 8 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution reference circuit, 2140 mhz (cont.) a210152 m _cd_7- 23 - 09 rf_in rf_out v d 1 v g 2 c2 c3 c4 c5 c6 c7 c8 c9 c10 c14 c17 c18 c22 r2 r1 q2 c21 c20 r3 r4 q1 c11 c12 c13 c15 c16 v g 1 c1 v d2 c19 pt ma210152 m reference circuit assembly diagram (not to scale)* component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 0.5 pf atc 600s 0r5 ct c20 ceramic capacitor, 2.2 pf atc 600s 2r2 ct c21 ceramic capacitor, 1.0 pf atc 600s 1r0 ct c5, c10, c14, ceramic capacitor, 12 pf atc 600s 120 jt c15, c22 q1, q2 transistor infineon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key p00ect-nd r3, r4 potentiometer, 2 k ohms digi-key 3224w-202etr-nd *gerber files for this circuit available on request
data sheet 9 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution cw performance v dd = 28 v, i dq1 = 70 m a, i dq2 = 120 ma ? = 1805, 1830, 1880 mhz 10 12 14 16 18 20 22 24 26 28 30 32 29 31 33 35 37 39 41 43 45 output power (dbm) gain (db) 10 15 20 25 30 35 40 45 50 55 60 65 gain efficiency 1805 mhz 1830 mhz 1880 mhz power added efficiency (%) two-tone drive-up v dd = 28 v, i dq1 = 70 m a, i dq2 = 120 ma ? = 1805, 1830, 1880 mhz 0 5 10 15 20 25 30 35 40 45 50 29 31 33 35 37 39 41 43 output power, avg. (dbm) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 imd3 (dbc) efficienc y imd3 power added efficiency (%) 1805 mhz 1830 mhz 1880 mhz edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 160 ma, series are at selected frequencies 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 modulation spectrum (dbc) efficienc y 400 khz 600 khz power added efficiency (%) 1805.2 mhz 1836.6 mhz 1879.8 mhz edge - evm v dd = 28 v, i dq1 = 70 m a, i dq2 = 160 ma, series are at selected frequencies 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) 0 1 2 3 4 5 6 7 8 9 10 error vector magnitude (%) evm efficiency power added efficiency (%) 1805.2 mhz 1836.6 mhz 1879.8 mhz typical performance, 1840 mhz (data taken in infineon test fixture)
data sheet 10 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution broadband circuit impedance, 1840 mhz z load d s in 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 2 < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1800 mhz 2000 mhz z load z 0 = 50 frequency z load w mhz r jx 1800 4.34 ?7.66 1810 4.28 ?7.57 1820 4.21 ?7.48 1830 4.15 ?7.40 1840 4.09 ?7.30 1850 4.03 ?7.21 1860 3.96 ?7.12 1870 3.90 ?7.03 1880 3.85 ?6.94 1890 3.79 ?6.85 1900 3.73 ?6.76 1910 3.67 ?6.67 1920 3.62 ?6.57 1930 3.56 ?6.48 1940 3.50 ?6.39 1950 3.45 ?6.30 1960 3.40 ?6.21 1970 3.34 ?6.11 1980 3.29 ?6.02 1990 3.24 ?5.93 2000 3.19 ?5.84
data sheet 11 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution reference circuit, 1840 mhz reference circuit schematic for ? = 1840 mhz circuit assembly information dut PTMA210152M ldmos ic pcb ltn/PTMA210152M?18 0.76 mm [.030"] thick, r = 3.43 rogers ro4350 1 oz. copper microstrip electrical characteristics at 1840 mhz dimensions: l x w (mm) dimensions: l x w (in.) ? 1 0.135 , 50 7.59 x 1.70 0.299 x 0.067 ? 2 0.438 , 50 24.66 x 1.70 0.971 x 0.067 ? 3 0.073 , 10 4.09 x 12.83 0.161 x 0.505 ? 4 0.461 , 61 25.91 x 1.19 1.020 x 0.047 ? 5 0.0068 , 71 0.38 x 0.89 0.015 x 0.035 ? 6 0.0307 , 44 1.73 x 2.08 0.068 x 0.082 ? 7 0.465 , 44 26.16 x 2.08 1.030 x 0.082 ? 8 0.0881 , 50 4.95 x 1.70 0.195 x 0.067 a210152 m _bd_7- 23- 09 j1 c18 1 f c16 0.1 f c15 12 pf c1 7 10 f c1 9 100 f 50v v d2 ? 3 ? 4 c22 12pf c2 1 3.3pf ? 7 ? 8 ptma210152 m 516 10 9 7 8 6 11 12 13 14 15 dut 1 3 4 2 17 18 19 20 c1 4 12pf c10 12pf c12 10 f c8 10 f c7 1 f c11 1 f c9 0. 1 f c13 0.1 f ? 1 v d1 c1 100 f 50v c2 1 f c3 10 f c6 1pf ? 2 c4 0.1 f c5 12pf r1 0 q1 v g1 r3 r2 0 q2 r4 g2 v c2 0 1.2pf ? 5 ? ? l1 2. 7 n h ? 6
data sheet 12 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution reference circuit, 1840 mhz (cont.) a210152 m _cd_7- 23 - 09 rf_in rf_out v d 1 v g 2 c2 c3 c4 c5 c6 c7 c8 c9 c10 c14 c17 c18 c22 r2 r1 q2 c21 c20 r3 r4 q1 c11 c12 c13 c15 c16 v g 1 c1 v d2 c19 PTMA210152M l1 reference circuit assembly diagram (not to scale)* component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 1.0 pf atc 600s 1r0 ct c20 ceramic capacitor, 1.2 pf atc 600s 1r2 ct c21 ceramic capacitor, 3.3 pf atc 600s 3r3 ct c5, c10, c14, ceramic capacitor, 12 pf atc 600s 120 jt c15, c22 q1, q2 transistor infineon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key p00ect-nd r3, r4 potentiometer, 2 k ohms digi-key 3224w-202etr-nd l1 inductor, 2.7 nh digi-key pcd1287ct-nd *gerber files for this circuit available on request
data sheet 13 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution pinout diagram 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 a210152 m- v1_pd_09 - 02- 2009 nc nc nc nc rf in rf in nc nc nc nc nc v dd1 v g1 v g2 v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out v dd 2 rf out find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower source: plated copper heatslug on backside of package
data sheet 14 of 15 rev. 04, 2010-04-16 PTMA210152M confidential, limited internal distribution package outline specifications package pg-dso-20-63 2x 2.90 [0.114] max (2 pls) 13.00 [0.512] max 1 10 11 20 6. index pin 1 6. 14.200.30 11.00 [0.433] 9 x 1.27 = 11.43 9 x .050 = .450 1.10 [0.043] max (2 pls) 2.95 [0.116] 6.00 [0.236] top view bottom view [0.5590.012] 0.40+0.13 [0.015+0.005] 0.25mm c a b 15.900.10 [0.6260.004] 1.27 [0.050] 141 (2 pls) top/bottom all sides 11.000.10 [0.4330.004] 5. 3.50 [0.137] max see detail a 4. side view end view m ss 0.950.15 [0.0370.006] 0.35 [0.014] gauge plane 0.15 [0.006] ref 0+0.1 [0+0.004] standoff 1.60 [0.063] ref 0.25 +0.07 ?0.02 [0.010 ] +0.003 ?0.001 detail a pg-dso-20-63_po_02-19-2010 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number: mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte) : 5 ? 15 micron [196.85 ? 590.55 microinch]. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 15 of 15 rev. 04, 2010-04-16 PTMA210152M v1 confidential, limited internal distribution revision history: 2010-04-16 data sheet previous version: 2009-10-19 data sheet page subjects (major changes since last revision) 3 added moisture sensitivity level table 14 updated package outline notes edition 2010-04-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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