advanced power 2n and 2p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 33m full bridge application on i d 6.3a lcd monitor inverter p-ch bv dss -30v r ds(on) 55m description i d -5.1a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage 25 25 v i d @t a =25 continuous drain current 3 6.3 -5.1 a i d @t a =70 continuous drain current 3 4.2 -3.4 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice parameter 200612032 AP9930M thermal data the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. n1g n1d/p1d n1s/n2s n2g p1g p1s/p2s n2d/p2d p2g so-8 n1g n1s p1g p1s p1n1d n2g n2s p2g p2s p2n2d
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 33 m v gs =4.5v, i d =3a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 5.2 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =25v - - na q g total gate charge 2 i d =5a - 7.1 - nc q gs gate-source charge v ds =15v - 2.3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.8 - nc t d(on) turn-on delay time 2 v ds =15v - 7.2 - ns t r rise time i d =1a - 10.4 - ns t d(off) turn-off delay time r g =6 , v gs =10v - 18 - ns t f fall time r d =15 - 7.8 - ns c iss input capacitance v gs =0v - 600 - pf c oss output capacitance v ds =25v - 230 - pf c rss reverse transfer capacitance f=1.0mhz - 94 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =1.7a, v gs =0v - 21.4 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc AP9930M 100
AP9930M p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 55 m v gs =-4.5v, i d =-3a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 4.8 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-5a - 7.3 - nc q gs gate-source charge v ds =-15v - 2.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.8 - nc t d(on) turn-on delay time 2 v ds =-15v - 10.8 - ns t r rise time i d =-1a - 7.6 - ns t d(off) turn-off delay time r g =6 ,v gs =-10v - 19.6 - ns t f fall time r d =15 - 17.5 - ns c iss input capacitance v gs =0v - 486 - pf c oss output capacitance v ds =-25v - 185.5 - pf c rss reverse transfer capacitance f=1.0mhz - 133.8 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-1.7a, v gs =0v - 21 - ns q rr reverse recovery charge di/dt=-100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. 25v 100
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP9930M 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 4.0v 8.0v 6.0v v g =3.0v 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.0v 6.0v 8.0v 10v v g =3.0v 20 25 30 35 40 45 34567891011 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =5a 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0.01 0.10 1.00 10.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP9930M n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s d c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm t t duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 /w 0.02 0 2 4 6 8 10 12 02468101214 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4.5a v ds =15v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP9930M 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g = -10v i d =-5a 0 5 10 15 20 25 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -8.0v -6.0v -4.0v v g =-3.0v 0 5 10 15 20 25 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -4.0v -6.0v -8.0v v g =-3.0v 30 40 50 60 70 80 90 100 34567891011 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-5a t a =25 0.01 0.10 1.00 10.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd ,source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 1 1.5 2 2.5 3 -50 0 50 100 150 t j ,junction temperature ( o c) -v gs(th) (v)
AP9930M p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm t t duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 /w 0.02 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 10 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 02468101214 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5a v ds =-15v t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
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