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elektronische bauelemente MPS2222A npn silicon general purpose transistor to-92 ? features . epitaxial planar die construction . complementary pnp type available (mps2907a) . ideal for medium power amplification and switching ? maximum ratings rating symbol value unit collector - emitter voltage v ceo 40 v collector - base voltage v cbo 75 v emitter - base voltage v ebo 6.0 v collector current - continuous i c 600 ma total device dissipation @ t a = 25 : 625 mw derate above 25 : p d 5.0 mw / : total device dissipation @ t c = 25 : 1.5 watts derate above 25 : p d 12 mw / : operating and storage junction temperature range t j , t stg -55 ~ +150 : ? thermal characteristics characteristic symbol max. unit thermal resistance, junction to ambient r ja 200 / w : thermal resistance, junction to case r jc 83.3 / w : ? electrical characteristics (t a = 25 : unless otherwise noted) characteristic symbol min. max. unit off characteristics collector - emitter breakdown voltage (i c = 10 ma, i b = 0) v (br)ceo 40 - v collector - base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 75 - v emitter - base breakdown voltage (i e = 10 a, i c = 0) v (br)ebo 6.0 - v collector cutoff current (v ce = 60 v, v eb(off) = 3.0 v) i cex - 10 na collector cutoff current (v cb = 60 v, i e = 0) - 0.01 (v cb = 60 v, i e = 0, t a = 150 ) : i cbo - 10 a emitter cutoff current (v eb = 3.0 v, i c = 0) i ebo - 10 na collector cutoff current (v ce = 10 v) i ceo - 10 na base cutoff current (v ce = 60 v, v eb(off) = 3.0 v) i bex - 20 na http://www.secosgmbh.com/ any changing of specification will not be informed individual 1 2 3 collector 3 2 base 1 emitter 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 6 rohs compliant product a suffix of "-c" specifies halogen & lead-free
elektronische bauelemente MPS2222A npn silicon general purpose transistor ? electrical characteristics (t a = 25 : unless otherwise noted) (continued) characteristic symbol min. max. unit on characteristics dc current gain (i c = 0.1 ma, v ce = 10 v) 35 - (i c = 1.0 ma, v ce = 10 v) 50 - (i c = 10 ma, v ce = 10 v) 75 - (i c = 10 ma, v ce = 10 v, t a = -55 ) : 35 - (i c = 150 ma, v ce = 10 v) (1) 100 300 (i c = 150 ma, v ce = 1.0 v) (1) 50 - (i c = 500 ma, v ce = 10 v) (1) h fe 40 - - collector - emitter saturation voltage (1) (i c = 150 ma, i b = 15 ma) - 0.3 (i c = 500 ma, i b = 50 ma) v ce(sat) - 1.0 v base - emitter saturation voltage (1) (i c = 150 ma, i b = 15 ma) 0.6 1.2 (i c = 500 ma, i b = 50 ma) v be(sat) - 2.0 v small - signal characteristics current - gain - bandwidth product (2) (i c = 20 ma, v ce = 20 v, f = 100 mhz) f t 300 - mhz output capacitance (v cb = 10 v, i e = 0, f = 1.0 mhz) c obo - 8.0 pf input capacitance (v eb = 0.5 v, i c = 0, f = 1.0 mhz) c ibo - 25 pf input impedance (i c = 1.0 ma, v ce = 10 v, f = 1.0 khz) 2.0 8.0 (i c = 10 ma, v ce = 10 v, f = 1.0 khz) h ie 0.25 1.25 k voltage feedback ratio (i c = 1.0 ma, v ce = 10 v, f = 1.0 khz) - 8.0 (i c = 10 ma, v ce = 10 v, f = 1.0 khz)) h re - 4.0 x 10 -4 small - signal current gain (i c = 1.0 ma, v ce = 10 v, f = 1.0 khz) 50 300 (i c = 10 ma, v ce = 10 v, f = 1.0 khz) h fe 75 375 - output admittance (i c = 1.0 ma, v ce = 10 v, f = 1.0 khz) 5.0 35 (i c = 10 ma, v ce = 10 v, f = 1.0 khz) h oe 25 200 mhos collector base time constant (i e = 20 ma, v cb = 20 v, f = 31.8 khz) r b , c c - 150 ps noise figure (i c = 100 a, v ce = 10 v, r s = 1.0 k , f = 1.0 khz) n f - 4.0 db switching characteristics delay time (v cc = 30 v, v be(off) = -2.0 v, td - 10 ns rise time i c = 150 ma, i b1 = 15 ma) (figure 1) tr - 25 ns storage time (v cc = 30 v, i c = 150 ma, ts - 225 ns fall time i b1 = i b2 = 15 ma) (figure 2) tf - 60 ns 1. pulse test: pulse width ? 300 s, duty cycle ? 2.0 %. 2. f t is defined as the frequency at which | h fe | extrapolates to unity. http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 2 of 6
elektronische bauelemente MPS2222A npn silicon general purpose transistor ? switching time equivalent test circuits http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 1. turn?on time figure 2. turn?off time scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope.
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! " # " # " # " # " # " # $ %%&&& '()* figure 3. dc current gain + && ,)$ %%&-$&%),'%* . " " " " " $ / /)&& '()* figure 4. collector saturation region 0 1" 0 1" " "" $ 1 () () "() "() 1 1 01-jun-2002 rev. a page 3 of 6
elektronische bauelemente MPS2222A npn silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 5. turn?on time $ %%&&& '()* # " $-'
* # " " # " # $ 2$ / 1 0 1" 3 4 1 5 4 /'66* 1 5 4 /'66* 1 " " $-'
* " # " # figure 6. turn?off time $ %%&&& '()* # " # " " 1 $ 2$ / 1 $ / 1$ / 0 1" 1 2. 6 6 figure 7. frequency effects 6&7 '89* . figure 8. source resistance effects & %&&$) '%8-* %$$,&'5/* " " " %$$,&'5/* " & 1%:$-- & 1 %& & 1 &$) $ 1 ()& 1" ? " )& 1 ? )& 1 ? " )& 1 ? 61 89 $ 1" ) ) " ) () . " " " " figure 9. capacitances &&%),'%* " # ):)$) '* " # " " # ;< =< figure 10. current?gain bandwidth product $ %%&&& '()* # " " 6 && ,)$ /) >$8:&%'-89* " # " # 1 0 1" 01-jun-2002 rev. a page 4 of 6
elektronische bauelemente MPS2222A npn silicon general purpose transistor http://www.secosgmbh.com/ any changing of specification will not be informed individual figure 11. ?on? voltages $ %%&&& '()* . %),'%* 0 1" /'?* 4$ 2$ / 1 '?* 4$ 2$ / 1 /'
* 4 1 figure 12. temperature coefficients $ %%&&& '()* " " %$$ '(2* " " & 63 '?* & / 63 / " " " " " " " " 01-jun-2002 rev. a page 5 of 6
elektronische bauelemente MPS2222A npn silicon general purpose transistor ? to-92 package outline dimensions http://www.secosgmbh.com/ any changing of specification will not be informed individual min max min max a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.400 4.700 0.173 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 ? 1.600 0.063 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270typ 0.050typ 01-jun-2002 rev. a page 6 of 6

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